Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's MT47H64M16NF-25EIT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast access times in a compact form factor.
Median Price
$3.033
Lifecycle Status
Suppliers In-Stock
15
In-Stock Inventory
1k+
Arrow
1+ parts
100+ parts
-
1k+ parts
10k+ parts
Mouser Electronics
$3.910
$3.580
$3.360
$3.230
EBV Elektronik
Future Electronics
$2.380
Verical
Digiode
$4.330
Nova Conductors
$5.789
Sensible Micro Corp
NAC Semi
$3.170
Vyrian
Component Sense
Martec Srl
Rebound Electronics
Bristol Electronics
Semtec, LLC
Corohmni
$2.416
Semicontronic
$3.040
$2.964
$2.949
Ampacity Inc.
Advanced Electronics
$3.616
$3.436
Andel Nordic
$3.986
$3.826
Corphita
$4.102
Continental Prestige Electronics
$4.470
$4.381
Argo Parts USA
Aztec Data Supply Inc.
$5.220
Netroflash
GreenTree Electronics
Epart123
$4.800
Authorized Procurement Solutions
Perfect Parts
Robosynatics
This material provides durability and resilience, making it a cost-effective choice for long-term use.
Enables easy mounting on circuit boards, saving time and effort during installation.
Compact shape allows for efficient use of space within electronic devices.
Synchronous operation enhances data transfer speed and overall system performance.
Self-refresh capability ensures data integrity and reliability without external intervention.
Low voltage requirement promotes energy efficiency and reduces power consumption.
Ample terminals provide connectivity options and flexibility in system integration.
This style offers high packaging density and optimizes signal transmission.
Wide temperature range allows for reliable operation in various environments.
Efficient organization ensures optimal data storage and retrieval capabilities.
Withstands low temperatures, making it suitable for a range of applications.
Bottom terminal position simplifies PCB layout and enhances signal integrity.
Low profile design accommodates space-constrained applications.
High clock frequency supports fast data transfer rates and smooth system operation.
Compact width enables easy integration into various electronic devices.
Low minimum voltage requirement ensures compatibility with a wide range of systems.
Optimal length for fitting into different electronic devices without consuming excess space.
Multi-bank page burst access mode enhances data transfer efficiency and speed.
CMOS technology offers low power consumption and high noise immunity for reliable performance.
Ball terminal form simplifies soldering and enhances electrical connections.
Moderate supply current requirement supports efficient power usage.
Large word count allows for extensive data storage capacity.
Sequential burst length supports efficient data transfer in both small and large chunks.
16-bit memory width facilitates fast data processing and handling.
Compact terminal pitch enhances connectivity and PCB layout options.
Simplified code for word count makes it easy to identify memory capacity.
Maximum voltage support provides a safe operating range for the product.
High memory density allows for extensive data storage capacity.
DDR2 DRAM offers fast data transfer rates and reliable performance for diverse applications.
Low standby current consumption prolongs battery life and reduces power usage.
Efficient refresh cycles maintain data integrity and prevent data loss.
Interleaved burst length enhances data transfer efficiency and throughput.
Fast access time ensures quick retrieval of data for improved system performance.
DRAM MT47H64M16NF-25EIT:MTR attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
Maximum Access Time:
Additional Features:
Maximum Clock Frequency (fCLK):
Input/Output Type:
Interleaved Burst Length:
JESD-30 Code:
Length:
Memory Density:
Memory IC Type:
Memory Width:
No. of Functions:
No. of Ports:
No. of Terminals:
No. of Words:
No. of Words Code:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Organization:
Package Body Material:
Package Code:
Package Equivalence Code:
Package Shape:
Package Style (Meter):
Refresh Cycles:
Maximum Seated Height:
Self Refresh:
Sequential Burst Length:
Maximum Standby Current:
Maximum Supply Current:
Maximum Supply Voltage (Vsup):
Minimum Supply Voltage (Vsup):
Nominal Supply Voltage / Vsup (V):
Surface Mount:
Technology:
Terminal Form:
Terminal Pitch:
Terminal Position:
Width:
MT47H64M16NF-25EIT:MTR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.32
SB
8542.32.00.15
PCN Design/Specification - Memory 24-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
BAV99
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
LM358MX
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358M
RC0805FR-0710KL
Yageo
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
ISO1050DUBR
Texas Instruments
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
1N4148W-T
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
CRGCQ0805F10K
TE Connectivity
TE Connectivity's CRGCQ0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance.
1N4148WS
Weitron Technology
LL4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
DP83848IVVX/NOPB
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
1N4148
Synsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MT46V16M16P-5BIT
Micron Technology
Micron Technology's MT46V16M16P-5BIT is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features a small outline package, common I/O type, and self-refresh mode. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC4M32B2B5-6A:L
MT48LC4M32B2B5-6A:L by Micron Technology is a 4MX32 Synchronous DRAM with a memory density of 134217728 bit. It operates at a voltage of 3.3V and has a max access time of 5.4 ns. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
M378T2863RZS-CE6
Samsung
Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
IS42S16800F-7BLI-TR
Integrated Silicon Solution
IS42S16800F-7BLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for industrial applications requiring fast access time and low standby current consumption.
AS4C512M16D3LB-12BCN
Alliance Memory
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
IS42S16320D-7TLI-TR
IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.
MT41K128M16JT-107IT:KTR
Micron Technology's MT41K128M16JT-107IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
MT40A1G16HBA-083E:A
Micron Technology's MT40A1G16HBA-083E:A is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT48LC2M32B2P-6:G
Micron Technology's MT48LC2M32B2P-6:G is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for commercial applications requiring fast access time of 5.5 ns and common I/O type. The small outline package with 0.5 mm terminal pitch makes it ideal for space-constrained designs.
IS42S16320F-7TLI
IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.
MT40A1G8WE-083EIT:B
Micron Technology's MT40A1G8WE-083EIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access speeds.
K4B2G0846C-HCH9
Samsung's K4B2G0846C-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
MT41J128M16JT-125:KTR
Micron Technology's MT41J128M16JT-125:KTR is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 2Gb. Ideal for applications requiring high-speed data processing in devices like computers and servers.
KM44C1000BLJ-6
Samsung's KM44C1000BLJ-6 is a 1MX4 DRAM with 1048576 words and 4194304 bit memory density. Operating at 5V, it offers a max access time of 60ns for fast page access applications. With a package size of 17.145mm x 7.62mm x 3.68mm, this CMOS technology-based chip is ideal for commercial temperature grade environments.
K4H560838H-UCB3
Samsung's K4H560838H-UCB3 DDR1 DRAM features 32MX8 organization, operates at 166 MHz clock frequency, and has a memory density of 268MB. Ideal for commercial applications requiring high-speed data processing with a max operating temperature of 70°C.
MT48LC16M16A2P-7EAIT:G
Micron Technology's MT48LC16M16A2P-7EAIT:G is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, four bank page burst access, and offers 268MB memory density. Ideal for industrial applications requiring fast data processing in compact systems.
KMM466S823CT3-F0
Samsung's KMM466S823CT3-F0 is a 8MX64 Synchronous DRAM Module with 64 memory width. It operates at 100 MHz clock frequency, suitable for commercial applications requiring fast data access and storage capabilities. With self-refresh feature and 3-STATE output characteristics, it offers reliable performance in various electronic devices.
K4T1G164QQ-HCE6
Samsung's K4T1G164QQ-HCE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for applications requiring high-speed memory access and data processing with a max standby current of 0.015 Amp.
MT48LC4M32B2P-7:G
Micron Technology's MT48LC4M32B2P-7:G is a 3.3V Synchronous DRAM with 4MX32 organization, suitable for commercial applications. It features a max clock frequency of 143 MHz, operates at temperatures b/w 0 to 70 °C, and has a memory density of 134217728 bits.
MT48LC8M16A2P-75:G
Micron Technology's MT48LC8M16A2P-75:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 133MHz clock frequency. It features common I/O type, self-refresh mode, and small outline package shape. Ideal for commercial applications requiring fast memory access and low power consumption.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MT47H64M16NF-25EIT:M
MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16NF-25E:M
Micron Technology's MT47H64M16NF-25E:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V nominal voltage and offers 67108864 words of memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16NF-25EXIT:M
Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.
MT47H64M16NF-25EAIT:M
Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT47H64M16NF-25E:MTR
MT47H64M16NF-25E:MTR by Micron Technology is a 1.8V DDR2 DRAM with 64M words and 16-bit memory width. It operates synchronously, has self-refresh capability, and can withstand temperatures up to 85°C. It is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
MT47H128M16RT-25EAIT:CTR
DDR2 DRAM; Terminal Finish: TIN SILVER COPPER;
MT47H128M16RT-25EIT:C
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT47H64M16NF-25EAAT:MTR
Micron Technology's MT47H64M16NF-25EAAT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in automotive electronics or industrial control systems.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H128M16RT-25EAIT:C
Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.
MT47H32M16NF-25EIT:HTR
Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
MT47H128M16RT-25E:CTR
Micron Technology's MT47H128M16RT-25E:CTR is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Suitable for applications requiring high memory density and fast access times in a compact package.
MT47H32M16NF-25EIT:H
Micron Technology's MT47H32M16NF-25EIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and AEC-Q100 screening for industrial applications.
MT47H128M16RT-25EXIT:C
Micron Technology's MT47H128M16RT-25EXIT:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.
MT47H128M16RT-25EAAT:C
Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT47H64M16NF-25EAAT:M
Micron Technology's MT47H64M16NF-25EAAT:M is a DDR2 DRAM with 64MX16 organization, operating at a max clock frequency of 400 MHz. It has a memory density of 1,073,741,824 bits and is commonly used in applications requiring high-speed synchronous memory.
MT47H32M16NF-25EAIT:H
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
MT47H64M16HR-3IT:HTR
Micron Technology's MT47H64M16HR-3IT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access times in industrial environments.
MT47H128M8SH-25EIT:M
Micron Technology's MT47H128M8SH-25EIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved