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MT47H64M16NF-25E:MTR

Micron Technology

MT47H64M16NF-25E:MTR by Micron Technology

MT47H64M16NF-25E:MTR by Micron Technology is a 1.8V DDR2 DRAM with 64M words and 16-bit memory width. It operates synchronously, has self-refresh capability, and can withstand temperatures up to 85°C. It is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.

Median Price

$4.204

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,769 parts In-Stock

1+ parts

$4.420

100+ parts

$3.490

1k+ parts

$3.110

10k+ parts

$3.090

8,769

$4.420

$3.490

$3.110

$3.090

EBV Elektronik

Germany . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,000

-

-

-

-

Future Electronics

Canada . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$2.160

8,000

-

-

-

$2.160

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$4.204

6,000

-

-

-

$4.204

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$4.204

6,000

-

-

-

$4.204

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 823 parts In-Stock

1+ parts

$4.170

100+ parts

-

1k+ parts

-

10k+ parts

-

823

$4.170

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$4.795

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$4.795

-

-

-

Bristol Electronics

USA . 34,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

34,000

-

-

-

-

Vyrian

USA . 7,370 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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-

7,370

-

-

-

-

NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$3.970

4,000

-

-

-

$3.970

Sensible Micro Corp

USA . 1,033 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,033

-

-

-

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Cyclops Electronics Ltd

UK . 946 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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946

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 273 parts In-Stock

1+ parts

$2.926

100+ parts

$2.780

1k+ parts

$2.780

10k+ parts

-

273

$2.926

$2.780

$2.780

-

Semicontronic

India . 33,467 parts In-Stock

1+ parts

$3.570

100+ parts

$3.481

1k+ parts

$3.463

10k+ parts

-

33,467

$3.570

$3.481

$3.463

-

Ampacity Inc.

Singapore . 11,928 parts In-Stock

1+ parts

$3.570

100+ parts

-

1k+ parts

-

10k+ parts

-

11,928

$3.570

-

-

-

Corphita

USA . 447 parts In-Stock

1+ parts

$3.951

100+ parts

-

1k+ parts

-

10k+ parts

-

447

$3.951

-

-

-

Corohmni

South Africa . 1,062 parts In-Stock

1+ parts

$4.052

100+ parts

-

1k+ parts

-

10k+ parts

-

1,062

$4.052

-

-

-

Aztec Data Supply Inc.

USA . 1,132 parts In-Stock

1+ parts

$4.380

100+ parts

-

1k+ parts

-

10k+ parts

-

1,132

$4.380

-

-

-

Continental Prestige Electronics

USA . 3,110 parts In-Stock

1+ parts

$4.795

100+ parts

-

1k+ parts

-

10k+ parts

$4.700

3,110

$4.795

-

-

$4.700

Netroflash

USA . 100 parts In-Stock

1+ parts

$4.795

100+ parts

-

1k+ parts

$4.556

10k+ parts

$4.460

100

$4.795

-

$4.556

$4.460

Epart123

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.500

10k+ parts

$2.500

70,000

-

-

$2.500

$2.500

Authorized Procurement Solutions

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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18,000

-

-

-

-

Argo Parts USA

USA . 3,907 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

-

3,907

-

-

-

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iodParts Technologies Inc.

India . 1,729 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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1,729

-

-

-

-

Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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500

-

-

-

-

Overview

Discover the cutting-edge MT47H64M16NF-25E:MTR by Micron Technology, a high-quality DRAM that offers unparalleled performance and reliability. With its advanced technology and innovative design, this product is perfect for a wide range of applications. Whether you're a gamer, a creative professional, or a tech enthusiast, this product will exceed your expectations. Experience seamless multitasking, lightning-fast data transfers, and enhanced system responsiveness. Don't settle for anything less than the best. Upgrade to Micron Technology and unlock the full potential of your device.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made of durable plastic/epoxy material, ensuring its long-lasting and reliable performance.

Surface Mount: YES

With its surface mount capability, this product can be easily installed on PCBs, making it suitable for compact and space-constrained designs.

No. of Functions: 1

This product has a single function, simplifying its integration and usage in various applications.

Package Shape: RECTANGULAR

The rectangular shape of this product allows for efficient space utilization while facilitating easy placement on circuit boards.

Operating Mode: SYNCHRONOUS

The synchronous operation of this product ensures precise and coordinated data transfers, enhancing system performance.

Self Refresh: YES

The self-refresh feature of this product allows it to maintain data integrity even during power interruptions, providing a reliable and uninterrupted user experience.

Nominal Supply Voltage / Vsup (V): 1.8

With its nominal supply voltage of 1.8V, this product offers an optimal balance between power consumption and performance.

No. of Terminals: 84

This product features 84 terminals, providing ample connectivity options for interfacing with other components and systems.

Package Style (Meter): GRID ARRAY

The grid array package style of this product simplifies the assembly process, ensuring high mechanical reliability.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can reliably function in a wide range of environmental conditions.

Organization: 64MX16

The 64MX16 organization of this product enables it to store a large amount of data, making it suitable for memory-intensive applications.

Minimum Operating Temperature: 0 °C

This product can operate efficiently even at low temperatures down to 0°C, making it versatile for various environments.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish of this product ensures excellent electrical conductivity and corrosion resistance, enhancing its overall durability.

Terminal Position: BOTTOM

With its bottom terminal position, this product can be easily connected to other components or fitted into socket connectors, simplifying its installation.

No. of Ports: 1

This product has one port, allowing for straightforward connectivity and data transfer with other devices.

Minimum Supply Voltage (Vsup): 1.7 V

With a minimum supply voltage of 1.7V, this product offers energy efficiency while maintaining stable operation.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time this product can withstand peak reflow temperature (260°C) is 30 seconds, ensuring robust soldering during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this product can withstand high-temperature soldering processes, ensuring secure connections.

Access Mode: MULTI BANK PAGE BURST

The multi-bank page burst access mode of this product allows for efficient and rapid data retrieval from multiple memory banks, enhancing overall performance.

Technology: CMOS

Built with CMOS technology, this product offers low power consumption, high-speed operation, and excellent noise immunity, making it a reliable choice.

Terminal Form: BALL

The ball terminal form of this product enables high-density connections and reliable electrical contact, ensuring stable and efficient data transmission.

No. of Words: 67108864 words

With a capacity of 67,108,864 memory words, this product can store a vast amount of data, meeting the demands of memory-intensive applications.

Memory Width: 16

The 16-bit memory width of this product allows for efficient data processing and transfer, enhancing system performance.

No. of Words Code: 64M

This product's 64M words code provides a clear understanding of its large storage capacity and suitability for data-intensive tasks.

Maximum Supply Voltage (Vsup): 1.9 V

With a maximum supply voltage of 1.9V, this product offers higher operating margin and stable performance in diverse voltage scenarios.

Memory Density: 1073741824 bit

This product has a memory density of 1,073,741,824 bits, ensuring extensive data storage capability for memory-demanding applications.

Memory IC Type: DDR2 DRAM

Being a type of DDR2 DRAM (Double Data Rate 2 Dynamic Random-Access Memory), this product offers an excellent balance between data transfer speed and energy efficiency, making it a reliable choice for various computing systems.

Technical Specifications

DRAM MT47H64M16NF-25E:MTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH

JESD-30 Code:

R-PBGA-B84

JESD-609 Code:

e1

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MT47H64M16NF-25E:MTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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