Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MT47H64M16NF-25E:MTR by Micron Technology is a 1.8V DDR2 DRAM with 64M words and 16-bit memory width. It operates synchronously, has self-refresh capability, and can withstand temperatures up to 85°C. It is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
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Netroflash
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Epart123
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Authorized Procurement Solutions
Argo Parts USA
iodParts Technologies Inc.
Robosynatics
This product is made of durable plastic/epoxy material, ensuring its long-lasting and reliable performance.
With its surface mount capability, this product can be easily installed on PCBs, making it suitable for compact and space-constrained designs.
This product has a single function, simplifying its integration and usage in various applications.
The rectangular shape of this product allows for efficient space utilization while facilitating easy placement on circuit boards.
The synchronous operation of this product ensures precise and coordinated data transfers, enhancing system performance.
The self-refresh feature of this product allows it to maintain data integrity even during power interruptions, providing a reliable and uninterrupted user experience.
With its nominal supply voltage of 1.8V, this product offers an optimal balance between power consumption and performance.
This product features 84 terminals, providing ample connectivity options for interfacing with other components and systems.
The grid array package style of this product simplifies the assembly process, ensuring high mechanical reliability.
With a maximum operating temperature of 85°C, this product can reliably function in a wide range of environmental conditions.
The 64MX16 organization of this product enables it to store a large amount of data, making it suitable for memory-intensive applications.
This product can operate efficiently even at low temperatures down to 0°C, making it versatile for various environments.
The tin silver copper terminal finish of this product ensures excellent electrical conductivity and corrosion resistance, enhancing its overall durability.
With its bottom terminal position, this product can be easily connected to other components or fitted into socket connectors, simplifying its installation.
This product has one port, allowing for straightforward connectivity and data transfer with other devices.
With a minimum supply voltage of 1.7V, this product offers energy efficiency while maintaining stable operation.
The maximum time this product can withstand peak reflow temperature (260°C) is 30 seconds, ensuring robust soldering during the assembly process.
With a peak reflow temperature of 260°C, this product can withstand high-temperature soldering processes, ensuring secure connections.
The multi-bank page burst access mode of this product allows for efficient and rapid data retrieval from multiple memory banks, enhancing overall performance.
Built with CMOS technology, this product offers low power consumption, high-speed operation, and excellent noise immunity, making it a reliable choice.
The ball terminal form of this product enables high-density connections and reliable electrical contact, ensuring stable and efficient data transmission.
With a capacity of 67,108,864 memory words, this product can store a vast amount of data, meeting the demands of memory-intensive applications.
The 16-bit memory width of this product allows for efficient data processing and transfer, enhancing system performance.
This product's 64M words code provides a clear understanding of its large storage capacity and suitability for data-intensive tasks.
With a maximum supply voltage of 1.9V, this product offers higher operating margin and stable performance in diverse voltage scenarios.
This product has a memory density of 1,073,741,824 bits, ensuring extensive data storage capability for memory-demanding applications.
Being a type of DDR2 DRAM (Double Data Rate 2 Dynamic Random-Access Memory), this product offers an excellent balance between data transfer speed and energy efficiency, making it a reliable choice for various computing systems.
DRAM MT47H64M16NF-25E:MTR attributes and parameters. Explore more DRAM devices from Micron Technology
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MT47H64M16NF-25E:MTR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.32
SB
8542.32.00.15
PCN Packaging - Memory 24-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
2N7002
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Vishay Telefunken
Rfe International
SMBJ18CA
Db Lectro
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Diodes Incorporated
EU2B-YS2J03C
Idec
ROTARY SWITCH;
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
Meritek Electronics
Frontier Electronics
Silicon Standard
STM32H753ZIT6
STMicroelectronics
STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
MT46V16M16BG-6IT:F
Micron Technology
Micron Technology's MT46V16M16BG-6IT:F is a DDR1 DRAM with 16MX16 organization, operating at 167 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
W9825G6KH-6I
Winbond Electronics
W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
SQR-SD3M-8G1K6SNLB
Advantech
Advantech's SQR-SD3M-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and synchronous operation in a compact MICROELECTRONIC ASSEMBLY package.
K4S561632J-UC75T
Samsung
Samsung's K4S561632J-UC75T is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for applications requiring high-speed memory performance in compact electronic devices.
KM416C1000AJ-6
Samsung KM416C1000AJ-6 is a 1MX16 DRAM with 1048576 words, 16-bit memory width, and 60ns access time. It operates at 5V with a max standby current of 0.001A, suitable for fast page applications in commercial temperature grades.
MT4KTF25664HZ-1G9P1
Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.
MT53E256M16D1FW-046WT:B
LPDDR4 DRAM;
MT47H64M16NF-25E:M
Micron Technology's MT47H64M16NF-25E:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V nominal voltage and offers 67108864 words of memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT53E2G32D4NQ-046WT:A
Micron Technology's MT53E2G32D4NQ-046WT:A is a LPDDR4 DRAM with 2GX32 organization, 32-bit memory width, and 68719476736-bit memory density. It operates synchronously at temperatures ranging from -25°C to 85°C. Ideal for applications requiring high-speed and low-power memory solutions in compact form factors.
IS42S32160D-7BLI
Integrated Silicon Solution
IS42S32160D-7BLI by Integrated Silicon Solution is a 16MX32 SYNCHRONOUS DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for INDUSTRIAL applications, it features FOUR BANK PAGE BURST access mode and offers a memory density of 536870912 bit.
MT46V32M16P-5B:FTR
MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT42L32M32D1HE-18AAT:D
Micron Technology's MT42L32M32D1HE-18AAT:D is a LPDDR2 DRAM with 32MX32 organization, operating at 533 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics or industrial devices.
MT48LC4M32B2B5-6AAAT:L
Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.
S70KL1282DPBHA020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Screening Level: AEC-Q100;
MT41K512M8DA-107AAT:PTR
DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
M378T2863RZS-CE6
Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
AS4C32M16SB-7TINTR
Alliance Memory
SYNCHRONOUS DRAM; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
MT48LC16M16A2B4-6A:G
MT48LC16M16A2B4-6A:G by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a compact grid array package.
M12L2561616A-6TG2A
Elite Semiconductor Microelectronics Technologyinc
M12L2561616A-6TG2A by Elite Semiconductor is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MT47H64M16NF-25EIT:M
MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16NF-25EIT:MTR
Micron Technology's MT47H64M16NF-25EIT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast access times in a compact form factor.
MT47H64M16NF-25EXIT:M
Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.
MT47H64M16NF-25EAIT:M
Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT47H128M16RT-25EAIT:CTR
DDR2 DRAM; Terminal Finish: TIN SILVER COPPER;
MT47H128M16RT-25EIT:C
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT47H64M16NF-25EAAT:MTR
Micron Technology's MT47H64M16NF-25EAAT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in automotive electronics or industrial control systems.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H128M16RT-25EAIT:C
Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.
MT47H32M16NF-25EIT:HTR
Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
MT47H128M16RT-25E:CTR
Micron Technology's MT47H128M16RT-25E:CTR is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Suitable for applications requiring high memory density and fast access times in a compact package.
MT47H32M16NF-25EIT:H
Micron Technology's MT47H32M16NF-25EIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and AEC-Q100 screening for industrial applications.
MT47H128M16RT-25EXIT:C
Micron Technology's MT47H128M16RT-25EXIT:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.
MT47H128M16RT-25EAAT:C
Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT47H64M16NF-25EAAT:M
Micron Technology's MT47H64M16NF-25EAAT:M is a DDR2 DRAM with 64MX16 organization, operating at a max clock frequency of 400 MHz. It has a memory density of 1,073,741,824 bits and is commonly used in applications requiring high-speed synchronous memory.
MT47H32M16NF-25EAIT:H
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
MT47H64M16HR-3IT:HTR
Micron Technology's MT47H64M16HR-3IT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access times in industrial environments.
MT47H128M8SH-25EIT:M
Micron Technology's MT47H128M8SH-25EIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
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