Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.
Median Price
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$10.734
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$10.653
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$10.326
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Plastic/epoxy material provides durability and protection to the internal components of the DRAM, ensuring a longer lifespan.
Surface mount capability allows for easy installation on a circuit board, saving time and effort during assembly.
Synchronous operation ensures data is transmitted and processed efficiently, resulting in faster performance.
Low nominal supply voltage helps in saving power and contributes to energy efficiency.
Having a higher number of terminals allows for more data lines to be connected, increasing the overall data transfer capacity.
High clock frequency indicates the ability of the DRAM to process data at a faster rate, improving overall system performance.
Being DDR4 DRAM ensures compatibility with modern systems and provides faster data transfer rates compared to older generation DRAM types.
DRAM IS43QR16256B-075UBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution
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IS43QR16256B-075UBL Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
1N4148
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Plessey Semiconductors Discrete Components Div
Other Transistors;
2N2222A
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
Onsemi
DRV5053VAQLPG
Texas Instruments
Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
Semiconductors
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
INA826AIDGKR
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
Silicon Group
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
LL4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
BAV99
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
AS4C256M32MD4-062BAN
Alliance Memory
Alliance Memory's AS4C256M32MD4-062BAN is a 256MX32 LPDDR4 DRAM with 32-bit memory width and 8589934592-bit density. It operates b/w -40 to 105 °C, featuring multi-bank page burst access mode. Ideal for high-performance applications requiring fast data processing and storage capabilities.
MT53E1G32D2FW-046AUT:B
Micron Technology
Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.
MT40A256M16HA-093E:A
Micron Technology's MT40A256M16HA-093E:A is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. This thin-profile memory module has a package style of grid array with fine pitch terminals, suitable for various applications requiring high-speed data processing in compact devices.
MT40A512M16LY-075:E
Micron Technology's MT40A512M16LY-075:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
IS43TR16128DL-107MBL
Integrated Silicon Solution
IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
MT48LC16M16A2TG-75IT
MT48LC16M16A2TG-75IT by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
K4F6E3S4HM-MGCJ
Samsung Electro-mechanics
Samsung Electro-mechanics' K4F6E3S4HM-MGCJ is a LPDDR4 DRAM with 512MX32 organization, 17179869184 bit memory density, and operates at 1.1V. It features a GRID ARRAY package style and is suitable for applications requiring high-speed data processing in devices such as smartphones and tablets.
NT5TU64M16HG-ACH
Nanya Technology
NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.
MT41J256M16HA-125:ETR
Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.
MT52L256M32D1PF-107WT:B
Micron Technology's MT52L256M32D1PF-107WT:B is a LPDDR3 DRAM with 256MX32 organization, 933 MHz clock frequency, and 1.2V nominal voltage. It is suitable for applications requiring high-speed memory access in mobile devices due to its low profile package and common I/O type.
KVR16LS11/8
Kingston Technology Company
Kingston KVR16LS11/8 is a 1.35V DDR DRAM module with 1GX64 organization, operating at up to 800MHz clock frequency. It features 204 terminals in a rectangular package suitable for microelectronic assembly. Ideal for applications requiring high memory density and fast data access within the temperature range of 0-85°C.
AS4C4M16SA-6BIN
Alliance Memory's AS4C4M16SA-6BIN is a 3.3V, 4MX16 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode, operates at -40 to 85°C, and has a memory density of 67108864 bits.
MT41K128M16JT-125AIT:KTR
Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.
KM416C1000AJ-7
Samsung
Samsung's KM416C1000AJ-7 is a 1MX16 DRAM with 70ns access time, operating at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high memory density and fast data retrieval.
MT48LC16M16A2P-7E:D
Micron Technology's MT48LC16M16A2P-7E:D is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz, has a memory density of 268435456 bit, and supports a max clock frequency of 143 MHz. Ideal for applications requiring fast data access and storage in commercial-grade environments.
IS43TR16512S2DL-125KBLI
IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
K4S561632E-UC75
Samsung's K4S561632E-UC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT47H32M16NF-25EAIT:H
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
MT41K128M16HA-15E:D
Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
IS42S16320D-7TLI
IS42S16320D-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring fast access time of 5.4ns and memory density of 536MB in a small outline package.
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IS43TR16256A-15HBLI
IS43TR16256A-15HBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 4294967296 bit memory density. It operates synchronously at 1.5V, featuring self-refresh and industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.
IS43TR16256BL-125KBLI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16256BL-125KBLI-TR
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
IS43TR16256A-125KBLI
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
IS43TR16256B-125KBLI
IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.
IS43TR16256AL-125KBLI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
IS43TR16256B-125KBLI-TR
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43DR16640B-25DBLI
IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
IS43TR16256AL-125KBL
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;
IS43LR32160C-6BLI
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16256BL-107MBLI-TR
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Technology: CMOS;
IS43TR16128B-15HBLI
IS43TR16512BL-125KBLI
IS43TR16512BL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.
IS43TR16256BL-107MBLI
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
IS43TR16512A-15HBLI
IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.
IS43DR81280B-3DBLI
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43LD32128B-25BLI
IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.
IS43LD32640B-18BLI-TR
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
IS43LQ16128A-062BLI
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
Supply Digital Components
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