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AS4C512M16D3LB-12BINTR

Alliance Memory

AS4C512M16D3LB-12BINTR by Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in a compact grid array package.

Median Price

$34.020

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Kruse Electronics AG

Switzerland . 38,000 parts In-Stock

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ARCO, INC.

USA . 38,000 parts In-Stock

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Kruse

Germany . 32,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$34.020

6,000

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$34.020

VNN

France . 3,585 parts In-Stock

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Vyrian

USA . 3,002 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,002 parts In-Stock

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$2.910

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$2.910

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AZTECH Wire

Italy . 807 parts In-Stock

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$18.229

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807

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GreenTree Electronics

Israel . 32,000 parts In-Stock

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Continental Prestige Electronics

USA . 5,960 parts In-Stock

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Argo Parts USA

USA . 4,446 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Upgrade your system with the AS4C512M16D3LB-12BINTR from Alliance Memory. Known for their superior quality and reliable performance, Alliance Memory products are trusted by industry professionals worldwide. This DDR3L DRAM offers seamless operation in a variety of applications, from consumer electronics to industrial machinery. With a nominal supply voltage of 1.35V and a maximum clock frequency of 800 MHz, this memory module delivers efficient and high-speed performance. Trust Alliance Memory to provide you with the cutting-edge technology you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, perfect for portable devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate timing and data transfer, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.35

Low nominal supply voltage reduces power consumption and heat dissipation for energy-efficient operation.

Maximum Clock Frequency (fCLK): 800 MHz

High clock frequency allows for fast data processing and smooth multitasking capabilities.

Technology: CMOS

CMOS technology ensures low power consumption and high speed operation, making the product reliable and efficient.

Technical Specifications

DRAM AS4C512M16D3LB-12BINTR attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,6X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.06 Amp

Maximum Supply Current:

122 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3LB-12BINTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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