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S27KL0642DPBHA020

Infineon Technologies

S27KL0642DPBHA020 by Infineon Technologies

Infineon's S27KL0642DPBHA020 is a 8MX8 DRAM with 3V nominal voltage, operating at up to 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 611 parts In-Stock

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Flip Electronics

USA . 208 parts In-Stock

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Digiode

USA . 172 parts In-Stock

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Nova Conductors

Japan . 24 parts In-Stock

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Modulus Dynamics

Lithuania . 2,172 parts In-Stock

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$4.742

100+ parts

$4.552

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$4.363

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2,172

$4.742

$4.552

$4.363

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AZTECH Wire

Italy . 682 parts In-Stock

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$18.441

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Ampacity Inc.

Singapore . 434 parts In-Stock

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$23.000

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Bastille Electronics

Australia . 4,931 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,803 parts In-Stock

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Continental Prestige Electronics

USA . 2,245 parts In-Stock

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Argo Parts USA

USA . 1,687 parts In-Stock

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Corphita

USA . 937 parts In-Stock

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Overview

Experience superior performance and reliability with the S27KL0642DPBHA020 DRAM by Infineon Technologies, a global leader in innovative semiconductor solutions. Designed for synchronous operation and common input/output type, this memory module offers a wide range of applications in automotive, industrial, and consumer electronics. With a compact grid array package and very thin profile, this high-quality DRAM delivers seamless data processing at up to 200 MHz clock frequency. Trust Infineon's cutting-edge technology to elevate your product's performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and cost-effective.

Surface Mount: YES

The surface mount feature makes it easy to integrate into various electronic devices without the need for bulky connectors.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high reliability and quality standards suitable for automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation helps in coordinating data transfer efficiently and ensuring data integrity.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V provides a balance between power consumption and performance.

Maximum Clock Frequency (fCLK): 200 MHz

With a high maximum clock frequency, the product can handle data at a faster rate, improving overall system performance.

Memory IC Type: HYPERRAM

Being a HyperRAM memory IC type, it offers high-speed data transfer capabilities, ideal for applications requiring quick access to memory.

Technical Specifications

DRAM S27KL0642DPBHA020 attributes and parameters. Explore more DRAM devices from Infineon Technologies

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Standby Current:

.00025 Amp

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

S27KL0642DPBHA020 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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