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EDW4032BABG-70-F-D

Micron Technology

EDW4032BABG-70-F-D by Micron Technology

Micron Technology's EDW4032BABG-70-F-D is a 128MX32 DRAM with 1.35V supply, synchronous operation, and self-refresh capability. It features a grid array package style suitable for applications requiring high memory density and multi-bank page burst access mode in thin profile designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 11,900 parts In-Stock

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Vyrian

USA . 2,691 parts In-Stock

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Digiode

USA . 2,193 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Cyclops Electronics Ltd

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Distributors (Availability)

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AZTECH Wire

Italy . 394 parts In-Stock

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$5.323

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Ampacity Inc.

Singapore . 282 parts In-Stock

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$28.000

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Argo Parts USA

USA . 4,962 parts In-Stock

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Continental Prestige Electronics

USA . 2,351 parts In-Stock

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Corphita

USA . 2,342 parts In-Stock

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Microchip USA

USA . 424 parts In-Stock

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Authorized Procurement Solutions

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RC Electronics

USA . 52 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Perfect Parts

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Overview

Enhance your devices with the top-notch quality of Micron Technology's EDW4032BABG-70-F-D DRAM. Designed with precision and reliability, this memory module offers seamless performance in a variety of applications. With its innovative technology and high-density memory, customers can experience faster data access and improved system efficiency. Trust Micron Technology to deliver exceptional products that elevate your digital experience. Choose EDW4032BABG-70-F-D for unparalleled value and unmatched benefits in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability to the product.

Surface Mount: YES

Surface mount design makes it easy to install and saves space on the circuit board.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures better performance and data consistency.

Nominal Supply Voltage / Vsup (V): 1.35

Operates efficiently at a lower supply voltage, saving energy.

No. of Terminals: 170

Higher number of terminals allow for better connectivity and data transfer.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Grid array style with thin profile and fine pitch improves signal integrity and reduces interference.

Organization: 128MX32

Organized layout with high capacity and data width for enhanced performance.

Technology: CMOS

CMOS technology ensures low power consumption and high speed operation.

No. of Words: 134217728 words

Large word capacity enables storage of extensive data.

Memory Density: 4294967296 bit

High memory density allows for storing large amounts of data efficiently.

Memory IC Type: SYNCHRONOUS GRAPHICS RAM

Synchronous graphics RAM type enhances graphics processing capabilities and performance.

Technical Specifications

DRAM EDW4032BABG-70-F-D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY

Alternate Memory Width:

16

JESD-30 Code:

R-PBGA-B170

Length:

14 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

170

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Organization:

128MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.3905 V

Minimum Supply Voltage (Vsup):

1.3095 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

12 mm

Trade Compliance

EDW4032BABG-70-F-D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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