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IS42S16800F-6TLI

Integrated Silicon Solution

IS42S16800F-6TLI by Integrated Silicon Solution

IS42S16800F-6TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports self-refresh mode. Ideal for industrial applications requiring fast memory access and low standby current consumption.

Median Price

$3.294

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 2,349 parts In-Stock

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$3.050

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-

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$2.320

10k+ parts

$2.100

2,349

$3.050

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$2.320

$2.100

Rochester

USA . 1,080 parts In-Stock

1+ parts

$3.180

100+ parts

$2.990

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$2.700

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1,080

$3.180

$2.990

$2.700

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Chip1Stop

Japan . 50 parts In-Stock

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$24.300

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$24.300

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Verical

USA . 407 parts In-Stock

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$3.407

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$2.309

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$2.276

407

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$2.276

Avnet

USA . 216 parts In-Stock

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216

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Nova Conductors

Japan . 200 parts In-Stock

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$2.800

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$2.800

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TME

Poland . 5 parts In-Stock

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$5.000

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$5.000

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ACDS - Activité Composants Distribution Service

France . 784 parts In-Stock

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Vyrian

USA . 330 parts In-Stock

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NAC Semi

USA . 216 parts In-Stock

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$3.550

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216

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$3.550

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LWI Electronics Inc

India . 20 parts In-Stock

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Continental Prestige Electronics

USA . 2,901 parts In-Stock

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$2.800

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$2.744

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$2.800

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Argo Parts USA

USA . 1,221 parts In-Stock

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$2.800

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Netroflash

USA . 50 parts In-Stock

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$2.800

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$2.660

10k+ parts

$2.604

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$2.800

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$2.604

Aztec Data Supply Inc.

USA . 2,735 parts In-Stock

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$4.280

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$4.280

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Corohmni

South Africa . 108 parts In-Stock

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$4.434

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S.R.D Solutions

India . 5,400 parts In-Stock

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Authorized Procurement Solutions

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Eastek

USA . 216 parts In-Stock

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$3.370

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GreenTree Electronics

Israel . 216 parts In-Stock

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Overview

Upgrade your system performance with the IS42S16800F-6TLI by Integrated Silicon Solution. This high-quality DRAM offers seamless operation in synchronous mode, self-refresh capabilities, and common input/output type for easy integration. With a compact package style and industrial-grade temperature tolerance, this memory chip is ideal for a wide range of applications. Experience faster data access, improved efficiency, and reliable performance with the IS42S16800F-6TLI - the perfect choice for enhancing your electronics. Upgrade today and unleash the full potential of your devices!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, making the product long-lasting and reliable.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination between different components, optimizing performance and speed.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage level of 3.3V ensures compatibility with various systems and helps in efficient power management.

Maximum Clock Frequency (fCLK): 166 MHz

The high clock frequency enables fast data transfer rates and overall improved system performance.

Memory Density: 134217728 bit

High memory density allows for storing a large amount of data in a compact form, suitable for applications requiring high capacity.

Technical Specifications

DRAM IS42S16800F-6TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS42S16800F-6TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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