Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MT41K256M8DA-125AAT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and is designed for automotive applications due to its AEC-Q100 screening level. The memory IC offers a memory density of 2147483648 bits and supports multi-bank page burst access mode.
Median Price
$5.997
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$3.290
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$5.821
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$5.877
Bastille Electronics
$5.697
$5.412
$5.337
AZTECH Wire
$6.402
Ampacity Inc.
$26.000
Semicontronic
$27.000
$26.325
$26.190
QUARKTWIN TECHNOLOGY LTD
Perfect Parts
Argo Parts USA
Corphita
Authorized Procurement Solutions
Surface mount technology allows for easier and more efficient assembly of the product onto circuit boards, making it a convenient choice for manufacturers.
Synchronous operation ensures that data is transferred at a consistent speed, improving overall system performance and reliability.
A low nominal supply voltage of 1.35V helps in reducing power consumption and heat generation, making the product more energy efficient.
With a high maximum clock frequency of 800 MHz, this product can handle data at a fast rate, making it suitable for applications requiring high-speed operation.
Designed to operate within automotive temperature range specifications, this product is suitable for use in automotive applications where reliable performance in extreme temperatures is required.
Being a DDR3L DRAM, this product offers improved energy efficiency and higher data transfer speeds compared to older DRAM technologies, making it a more advanced and reliable choice.
DRAM MT41K256M8DA-125AAT:K attributes and parameters. Explore more DRAM devices from Micron Technology
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MT41K256M8DA-125AAT:K Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Design/Specification - Mult Dev Marking Chg 20/Dec/2019
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Memory 24-May-2022 Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
2N7002
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBR0520LT3G
Onsemi
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SS14+
Multicomp Pro
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
SMBJ18CA
Fairchild Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
Taitron Components
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
Transys Electronics
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BSS138LT3G
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
MT48LC4M32B2B5-6A:LTR
Micron Technology
Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.
MT46H32M32LFB5-6IT:B
Micron Technology's MT46H32M32LFB5-6IT:B is a DDR1 DRAM with 32MX32 organization, operating at 166 MHz. It features a 90-terminal grid array package suitable for industrial applications. With synchronous operation and self-refresh capability, it offers fast access time of 5 ns and supports sequential burst lengths of 2,4,8,16.
MT48LC2M32B2P-7:G
Micron Technology's MT48LC2M32B2P-7:G is a 3.3V Synchronous DRAM with 2MX32 organization, offering 2097152 words memory density. It operates at up to 143 MHz clock frequency and has a max access time of 5.5 ns. Ideal for commercial applications requiring high-speed memory performance in compact form factors.
MT42L256M32D4KP-25IT:A
Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
AS4C512M8D4-75BCN
Alliance Memory
Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
S27KL0642GABHB023
Infineon Technologies
Infineon's S27KL0642GABHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.
S27KS0642GABHV020
S27KS0642GABHV020 by Infineon Technologies is a 8MX8 DRAM with synchronous operation, self-refresh capability, and 200 MHz clock frequency. It is ideal for applications requiring high-speed memory access in compact devices due to its very thin profile package style and common I/O type.
MT48LC8M16A2TG-7E:GTR
Micron Technology's MT48LC8M16A2TG-7E:GTR is a 3.3V Synchronous DRAM with 8MX16 organization, offering 8388608 words and 134217728-bit memory density. Operating at a max temperature of 70°C, it features self-refresh mode and four-bank page burst access for commercial applications.
S70KL1282DPBHA020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Screening Level: AEC-Q100;
NT5TU64M16HG-ACH
Nanya Technology
NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.
S27KL0642GABHA023
Infineon's S27KL0642GABHA023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.
IS43TR16128DL-107MBL
Integrated Silicon Solution
IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
MT46H32M16LFBF-6AT:B
Micron Technology's MT46H32M16LFBF-6AT:B is a DDR1 DRAM with 32MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. This memory IC has a memory density of 536870912 bits and an access time of 5ns, making it ideal for high-performance applications requiring fast data processing.
MT41K512M16HA-125IT:A
MT41K512M16HA-125IT:A by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
IS42S16800F-7TL-TR
IS42S16800F-7TL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT40A256M16LY-062EAIT:FTR
Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.
MT41K256M16TW-107AAT:PTR
MT41K256M16TW-107AAT:PTR by Micron Technology is a DDR3L DRAM with 256MX16 organization, operating at a max clock frequency of 934.57 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
K4S281632O-LC60
Samsung
Samsung's K4S281632O-LC60 is a 8MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for applications requiring fast data access, it features synchronous operation, 70°C max temp, and small outline package style.
IS42S32400F-7TLI
IS42S32400F-7TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it features common I/O type, self-refresh mode, and supports four-bank page burst access mode.
IS42S16160J-6BLI
IS42S16160J-6BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance in a compact grid array package.
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MT41K256M16TW-107AIT:P
Micron Technology's MT41K256M16TW-107AIT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a low supply voltage of 1.35V and is suitable for industrial applications requiring high memory density and fast data access speeds. The package style is grid array, thin profile, fine pitch with common I/O type and self-refresh capability.
MT41K256M16TW-107IT:P
Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
MT41K256M16TW-107XIT:P
Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.
MT41K256M16TW-107:P/TR
Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT41K256M16TW-107:P
Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT41K256M16TW-107IT:PTR
MT41K256M16TW-107IT:PTR by Micron Technology is a 256MX16 DDR3L DRAM with a memory density of 4Gb. It operates at a nominal voltage of 1.35V and has an access time of 20ns. This memory module is suitable for applications requiring high-speed synchronous operation and low power consumption.
MT41K256M16TW-107AAT:P
Micron Technology's MT41K256M16TW-107AAT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With self-refresh capability and AEC-Q100 screening level, it offers reliable performance in harsh environments.
MT41K128M16JT-125IT:KTR
Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT41K128M16JT-125IT:K
MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT41K128M16JT-125AIT:KTR
Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.
MT41K128M16JT-125XIT:K
Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.
MT41K128M16JT-125:K
MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125AIT:K
Micron Technology's MT41K128M16JT-125AIT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125XIT:KTR
Micron Technology's MT41K128M16JT-125XIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
MT41K128M16JT-125:KTR
Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.
MT41K256M16TW-107AUT:P
DDR3L DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT41K256M16HA-125IT:E
Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K256M16HA-125IT:ETR
Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K128M16JT-107:K
Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.
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