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NT6AN512T32AV-J2

Nanya Technology

NT6AN512T32AV-J2 by Nanya Technology

NT6AN512T32AV-J2 by Nanya Technology is a LPDDR4 DRAM with 512MX32 organization, operating at 1.1V. It features synchronous operation, multi-bank page burst access mode, and a memory width of 32 bits. Ideal for applications requiring high memory density and fast data processing in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 4,238 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,538 parts In-Stock

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2,538

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Chip Stock

USA . 355 parts In-Stock

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355

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 164 parts In-Stock

1+ parts

$3.850

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164

$3.850

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AZTECH Wire

Italy . 840 parts In-Stock

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$19.694

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840

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Authorized Procurement Solutions

USA . 3,590 parts In-Stock

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Glotronic Ltd.

UK . 1,822 parts In-Stock

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GreenTree Electronics

Israel . 724 parts In-Stock

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Continental Prestige Electronics

USA . 280 parts In-Stock

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280

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Argo Parts USA

USA . 81 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Nanya Technology's NT6AN512T32AV-J2 offers top-notch quality and reliability in the DRAM category. With a sleek design and advanced technology, this memory IC is perfect for a wide range of applications. Whether you're a gamer, designer, or professional seeking seamless performance, this product delivers exceptional value and benefits. Trust Nanya Technology for cutting-edge solutions that elevate your experience to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and cost-effectiveness.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and space.

Package Shape: RECTANGULAR

Ensures compatibility with standard PCB designs.

Operating Mode: SYNCHRONOUS

Provides faster data transfer rates and overall performance.

Nominal Supply Voltage / Vsup (V): 1.1

Offers low power consumption for energy efficiency.

No. of Terminals: 200

Provides ample connectivity options for system integration.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Allows for high-density packaging in compact spaces.

Maximum Operating Temperature: 105 °C

Ensures stable performance even in high-temperature environments.

Organization: 512MX32

Offers a large memory capacity for handling complex tasks.

Minimum Operating Temperature: -30 °C

Can withstand extreme temperature conditions for versatile applications.

Terminal Position: BOTTOM

Facilitates easy connections and maintenance.

Maximum Seated Height: 1 mm

Low profile design for space-constrained applications.

Width: 10 mm

Compact size for efficient use of PCB space.

Minimum Supply Voltage (Vsup): 1.06 V

Allows for flexibility in power requirements.

Length: 15 mm

Overall dimensions suitable for various PCB layouts.

Access Mode: MULTI BANK PAGE BURST

Optimizes data access for improved performance.

Technology: CMOS

Offers efficient power usage and reliable operation.

Terminal Form: BALL

Ensures secure connections for stable performance.

No. of Words: 536870912 words

Large memory capacity for storing data and running applications.

Memory Width: 32

Efficient data transfer for enhanced system performance.

Terminal Pitch: 0.8 mm

Provides precise alignment for reliable connections.

No. of Words Code: 512M

Easy identification of memory size for system compatibility.

Maximum Supply Voltage (Vsup): 1.17 V

Supports a wider voltage range for compatibility with various systems.

Memory Density: 17179869184 bit

High storage capacity for handling extensive data requirements.

Memory IC Type: LPDDR4 DRAM

Offers fast data access speeds and low power consumption.

Technical Specifications

DRAM NT6AN512T32AV-J2 attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

JESD-30 Code:

R-PBGA-B200

Length:

15 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

512MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

1.17 V

Minimum Supply Voltage (Vsup):

1.06 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

NT6AN512T32AV-J2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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