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MTA9ADF1G72AZ-3G2E1

Micron Technology

MTA9ADF1G72AZ-3G2E1 by Micron Technology

Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

Median Price

$97.269

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 22 parts In-Stock

1+ parts

-

100+ parts

$97.269

1k+ parts

$89.153

10k+ parts

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22

-

$97.269

$89.153

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

eBay

USA . 150 parts In-Stock

1+ parts

$80.990

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150

$80.990

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Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$174.470

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35

$174.470

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Chip Stock

USA . 12,700 parts In-Stock

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12,700

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Vyrian

USA . 2,267 parts In-Stock

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Digiode

USA . 1,294 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,011 parts In-Stock

1+ parts

$4.275

100+ parts

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3,011

$4.275

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Corohmni

South Africa . 111 parts In-Stock

1+ parts

$5.215

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111

$5.215

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AZTECH Wire

Italy . 617 parts In-Stock

1+ parts

$11.482

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617

$11.482

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Ampacity Inc.

Singapore . 1,423 parts In-Stock

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$14.000

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$14.000

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Continental Prestige Electronics

USA . 3,580 parts In-Stock

1+ parts

$174.470

100+ parts

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10k+ parts

$170.981

3,580

$174.470

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$170.981

Netroflash

USA . 500 parts In-Stock

1+ parts

$174.470

100+ parts

$170.981

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500

$174.470

$170.981

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Argo Parts USA

USA . 2,668 parts In-Stock

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2,668

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Corphita

USA . 792 parts In-Stock

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792

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Authorized Procurement Solutions

USA . 10 parts In-Stock

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10

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Overview

Upgrade your system with the MTA9ADF1G72AZ-3G2E1 by Micron Technology, a top-quality DDR DRAM MODULE that offers unmatched performance and reliability. With its synchronous operation and self-refresh capabilities, this memory module ensures seamless multitasking and smooth data processing. Whether you're a gamer, content creator, or business professional, this versatile memory solution will enhance your computing experience. Trust in Micron Technology's expertise and invest in the future of technology with the MTA9ADF1G72AZ-3G2E1.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape makes it easy to fit into various devices and systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination with other components for efficient performance.

Self Refresh: YES

Self-refresh capability allows for energy savings and improved power efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Operates at a standard voltage level for compatibility and reliability.

No. of Terminals: 288

High number of terminals enable efficient data transfer and connectivity.

Maximum Operating Temperature: 95 °C

Can withstand high temperatures, making it suitable for a variety of environments and applications.

Organization: 1GX72

Organized in a 1 Gigabit x 72 configuration for ample storage and data handling capabilities.

Memory Width: 72

Wide memory width allows for processing of large chunks of data at once.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation.

Memory IC Type: DDR DRAM MODULE

Utilizes DDR technology for improved data transfer rates and performance.

Technical Specifications

DRAM MTA9ADF1G72AZ-3G2E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

77309411328 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

18.9 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

2.7 mm

Trade Compliance

MTA9ADF1G72AZ-3G2E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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