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MT46H64M16LFBF-5IT:BTR

Micron Technology

MT46H64M16LFBF-5IT:BTR by Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:BTR is a DDR1 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

Median Price

$5.891

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,294 parts In-Stock

1+ parts

$7.310

100+ parts

$6.280

1k+ parts

$5.920

10k+ parts

-

2,294

$7.310

$6.280

$5.920

-

EBV Elektronik

Germany . 43,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43,000

-

-

-

-

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.891

10k+ parts

$5.821

1,000

-

-

$5.891

$5.821

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.891

10k+ parts

$5.821

1,000

-

-

$5.891

$5.821

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,211 parts In-Stock

1+ parts

$5.215

100+ parts

-

1k+ parts

-

10k+ parts

-

2,211

$5.215

-

-

-

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$6.301

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$6.301

-

-

-

Chip Stock

USA . 13,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,400

-

-

-

-

Cyclops Electronics Ltd

UK . 8,873 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,873

-

-

-

-

Vyrian

USA . 2,953 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,953

-

-

-

-

NAC Semi

USA . 250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

250

-

-

-

-

Bristol Electronics

USA . 14 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 141 parts In-Stock

1+ parts

$3.639

100+ parts

-

1k+ parts

-

10k+ parts

-

141

$3.639

-

-

-

Semicontronic

India . 10,711 parts In-Stock

1+ parts

$4.300

100+ parts

$4.192

1k+ parts

$4.171

10k+ parts

-

10,711

$4.300

$4.192

$4.171

-

Ampacity Inc.

Singapore . 5,583 parts In-Stock

1+ parts

$4.300

100+ parts

-

1k+ parts

-

10k+ parts

-

5,583

$4.300

-

-

-

Corphita

USA . 948 parts In-Stock

1+ parts

$4.940

100+ parts

-

1k+ parts

-

10k+ parts

-

948

$4.940

-

-

-

Aztec Data Supply Inc.

USA . 161 parts In-Stock

1+ parts

$5.170

100+ parts

-

1k+ parts

-

10k+ parts

-

161

$5.170

-

-

-

Continental Prestige Electronics

USA . 4,415 parts In-Stock

1+ parts

$6.301

100+ parts

-

1k+ parts

-

10k+ parts

$6.175

4,415

$6.301

-

-

$6.175

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$6.301

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$6.301

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Argo Parts USA

USA . 4,195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,195

-

-

-

-

Epart123

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Perfect Parts

USA . 1,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,120

-

-

-

-

iodParts Technologies Inc.

India . 76 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76

-

-

-

-

Overview

Experience unparalleled performance and reliability with the MT46H64M16LFBF-5IT:BTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers cutting-edge DDR1 DRAM technology that is perfect for a wide range of applications. From industrial to automotive, this high-quality memory module offers fast access times, low power consumption, and superior temperature tolerance. Upgrade your systems today with Micron Technology and enjoy seamless performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on a circuit board, saving time and space.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent rate, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, reducing power consumption and heat generation.

Memory IC Type: DDR1 DRAM

DDR1 DRAM technology provides high-speed data access and transfer rates, ideal for demanding applications.

Technical Specifications

DRAM MT46H64M16LFBF-5IT:BTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT46H64M16LFBF-5IT:BTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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