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IS42S32800J-6TL

Integrated Silicon Solution

IS42S32800J-6TL by Integrated Silicon Solution

IS42S32800J-6TL by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 86 terminals, and supports four bank page burst access mode. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

Median Price

$7.020

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 53 parts In-Stock

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$6.401

100+ parts

$5.682

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53

$6.401

$5.682

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Mouser Electronics

USA . 895 parts In-Stock

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$7.640

100+ parts

$6.740

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$6.580

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895

$7.640

$6.740

$6.580

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DigiKey

USA . 6 parts In-Stock

1+ parts

$7.640

100+ parts

$6.734

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$6.183

10k+ parts

$6.027

6

$7.640

$6.734

$6.183

$6.027

Newark

USA . 103 parts In-Stock

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$9.460

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$9.460

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Arrow

USA . 108 parts In-Stock

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$4.321

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$4.206

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Verical

USA . 108 parts In-Stock

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$4.321

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$4.206

108

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$4.206

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$4.980

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$4.980

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Chip Stock

USA . 16,148 parts In-Stock

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North Shore Components

USA . 432 parts In-Stock

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Vyrian

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Sensible Micro Corp

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Inventory MP

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Bristol Electronics

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Distributors (Availability)

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$4.880

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$4.685

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$4.880

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$4.685

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Continental Prestige Electronics

USA . 2,197 parts In-Stock

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$4.980

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$4.880

2,197

$4.980

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$4.880

Lixinc

USA . 4,803 parts In-Stock

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Argo Parts USA

USA . 4,353 parts In-Stock

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Perfect Parts

USA . 1,261 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the IS42S32800J-6TL by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality DRAM solutions that are perfect for a wide range of applications. With a nominal supply voltage of 3.3V and a maximum clock frequency of 166 MHz, this product offers unmatched value and benefits to our customers. Trust ISS to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Unlock the power of innovation with the IS42S32800J-6TL today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the package, ensuring the safety of the internal components.

Surface Mount: YES

Surface mount capability allows for easy and secure installation onto circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage of 3.3V ensures consistent and reliable operation of the DRAM.

No. of Terminals: 86

Higher number of terminals allow for efficient communication and connectivity within the system, enhancing data transfer speed.

Maximum Clock Frequency (fCLK): 166 MHz

High maximum clock frequency of 166 MHz enables fast data processing and retrieval, leading to smoother system operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving energy efficiency and signal integrity.

Refresh Cycles: 4096

Large number of refresh cycles ensures data integrity and reliability, reducing the chances of data corruption or loss.

Technical Specifications

DRAM IS42S32800J-6TL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP86,.46,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Maximum Supply Current:

190 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS42S32800J-6TL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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