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MT46H64M32LFBQ-48AIT:C

Micron Technology

MT46H64M32LFBQ-48AIT:C by Micron Technology

Micron Technology's MT46H64M32LFBQ-48AIT:C is a 64MX32 LPDDR1 DRAM with 67108864 words. It operates at 208 MHz, has a memory width of 32 bits, and supports a max clock frequency of 208 MHz. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

Median Price

$12.792

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,329 parts In-Stock

1+ parts

$12.650

100+ parts

$10.120

1k+ parts

$9.840

10k+ parts

-

1,329

$12.650

$10.120

$9.840

-

Element14

Singapore . 413 parts In-Stock

1+ parts

$12.933

100+ parts

$11.119

1k+ parts

$11.001

10k+ parts

-

413

$12.933

$11.119

$11.001

-

Farnell

UK . 401 parts In-Stock

1+ parts

$16.380

100+ parts

-

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10k+ parts

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401

$16.380

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-

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Verical

USA . 1,440 parts In-Stock

1+ parts

-

100+ parts

$11.272

1k+ parts

$10.365

10k+ parts

-

1,440

-

$11.272

$10.365

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,161 parts In-Stock

1+ parts

$6.964

100+ parts

-

1k+ parts

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10k+ parts

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1,161

$6.964

-

-

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$10.650

100+ parts

-

1k+ parts

-

10k+ parts

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200

$10.650

-

-

-

Chip Stock

USA . 4,200 parts In-Stock

1+ parts

-

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4,200

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Vyrian

USA . 966 parts In-Stock

1+ parts

-

100+ parts

-

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966

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 658 parts In-Stock

1+ parts

$4.070

100+ parts

-

1k+ parts

-

10k+ parts

-

658

$4.070

-

-

-

Corohmni

South Africa . 358 parts In-Stock

1+ parts

$5.073

100+ parts

-

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10k+ parts

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358

$5.073

-

-

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Ampacity Inc.

Singapore . 679 parts In-Stock

1+ parts

$6.230

100+ parts

-

1k+ parts

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679

$6.230

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Corphita

USA . 1,870 parts In-Stock

1+ parts

$6.597

100+ parts

-

1k+ parts

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10k+ parts

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1,870

$6.597

-

-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$10.437

100+ parts

-

1k+ parts

$10.020

10k+ parts

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100

$10.437

-

$10.020

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Continental Prestige Electronics

USA . 2,633 parts In-Stock

1+ parts

$10.650

100+ parts

-

1k+ parts

-

10k+ parts

$10.437

2,633

$10.650

-

-

$10.437

A-Z Elektronik GmbH

Germany . 7,235 parts In-Stock

1+ parts

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100+ parts

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7,235

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Kepictronics

USA . 2,996 parts In-Stock

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2,996

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Perfect Parts

USA . 1,613 parts In-Stock

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1,613

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Argo Parts USA

USA . 1,091 parts In-Stock

1+ parts

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100+ parts

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1,091

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-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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Overview

Elevate your device's performance with Micron Technology's MT46H64M32LFBQ-48AIT:C, a top-of-the-line LPDDR1 DRAM that promises unparalleled speed and reliability. Designed with cutting-edge technology and superior craftsmanship, this DRAM offers seamless synchronization, self-refresh capabilities, and a wide temperature range for industrial applications. With a compact package style and low power consumption, this memory module maximizes efficiency without compromising on quality. Upgrade your system today and experience the difference with Micron Technology's MT46H64M32LFBQ-48AIT:C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM chip, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and performance, making it suitable for automotive applications.

Package Shape: RECTANGULAR

Provides a standard form factor that is compatible with many systems and devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard voltage level, making it compatible with many systems and reducing the risk of damage due to fluctuations in voltage.

Power Supplies (V): 1.8

Consistent power supply ensures stable and reliable operation of the DRAM chip.

No. of Terminals: 90

Sufficient number of terminals for data transfer and communication with other components.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Compact design with a fine pitch allows for high-density packaging and efficient use of space on circuit boards.

Maximum Operating Temperature: 85 °C

Can operate effectively in a wide range of temperatures, suitable for various environments and applications.

Technical Specifications

DRAM MT46H64M32LFBQ-48AIT:C attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

4.8 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

208 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

90 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT46H64M32LFBQ-48AIT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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