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MT46V16M16P-5BXIT:M

Micron Technology

MT46V16M16P-5BXIT:M by Micron Technology

Micron Technology's MT46V16M16P-5BXIT:M is a DDR1 DRAM with 16MX16 organization, 268435456 bit memory density, and 0.7 ns max access time. It operates synchronously at 2.6V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,204 parts In-Stock

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6,204

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Chip Stock

USA . 5,090 parts In-Stock

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5,090

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Digiode

USA . 1,638 parts In-Stock

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1,638

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Bristol Electronics

USA . 30 parts In-Stock

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30

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 990 parts In-Stock

1+ parts

$2.000

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990

$2.000

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Corohmni

South Africa . 202 parts In-Stock

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$4.250

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202

$4.250

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Aztec Data Supply Inc.

USA . 149 parts In-Stock

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$4.990

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149

$4.990

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Andel Nordic

Denmark . 2,359 parts In-Stock

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$8.715

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$8.366

10k+ parts

$8.366

2,359

$8.715

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$8.366

$8.366

AZTECH Wire

Italy . 325 parts In-Stock

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$14.656

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325

$14.656

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Semicontronic

India . 1,219 parts In-Stock

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$19.000

100+ parts

$18.525

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$18.430

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1,219

$19.000

$18.525

$18.430

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A-Z Elektronik GmbH

Germany . 7,598 parts In-Stock

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Continental Prestige Electronics

USA . 4,849 parts In-Stock

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Argo Parts USA

USA . 3,853 parts In-Stock

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Corphita

USA . 1,953 parts In-Stock

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Perfect Parts

USA . 1,210 parts In-Stock

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Microchip USA

USA . 411 parts In-Stock

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411

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Speed Components Ltd (Excess)

Israel . 277 parts In-Stock

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277

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Discover the cutting-edge MT46V16M16P-5BXIT:M by Micron Technology, a top-tier manufacturer known for its superior quality and reliability. This DDR1 DRAM module offers lightning-fast performance and seamless multitasking capabilities, making it ideal for a wide range of applications. With a nominal supply voltage of 2.6V and self-refresh technology, this memory module ensures optimal energy efficiency without compromising on speed. Upgrade your system with Micron's innovative technology and experience unparalleled speed and stability like never before. Elevate your computing experience today with the MT46V16M16P-5BXIT:M.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers which improves overall system performance.

Nominal Supply Voltage / Vsup (V): 2.6

Optimal voltage level ensures stable and efficient operation of the product.

No. of Terminals: 66

Sufficient number of terminals for connectivity and data transfer within the device.

Organization: 16MX16

High organization allows for efficient data storage and retrieval, enhancing overall system performance.

Width: 10.16 mm

Compact width saves space on the circuit board, making it suitable for smaller devices.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation, making the product energy-efficient.

No. of Words: 16777216 words

Large word capacity allows for extensive data storage and processing capabilities.

Memory Width: 16

Wide memory width enables fast data transfer, improving overall system performance.

Technical Specifications

DRAM MT46V16M16P-5BXIT:M attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G66

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

66

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

2.6

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT46V16M16P-5BXIT:M Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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