Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Samsung's M393A2G40EB2-CTD is a 288-terminal DDR DRAM module with 72-bit memory width and 2GX72 organization. Operating at 1.2V, it offers synchronous mode and self-refresh capability, making it ideal for high-performance computing applications requiring fast data access and reliable memory operations.
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This package shape allows for efficient layout and stacking in electronic devices, saving space and enabling higher memory capacity.
Synchronous operation ensures precise timing and coordination between the memory and the rest of the system, leading to faster and more reliable data transfers.
Self-refresh capability helps conserve power by allowing the memory to refresh itself without relying on external commands, prolonging battery life in portable devices.
The low nominal supply voltage of 1.2V helps reduce power consumption and heat generation, making the product more energy-efficient.
Having a high number of terminals enables efficient connectivity and data transfer between the memory module and the system, enhancing performance.
The microelectronic assembly package style offers high reliability and compactness, making it suitable for modern, space-constrained electronic devices.
The organization of 2GX72 indicates a high memory capacity and data width, allowing for faster data processing and storage capabilities.
Dual terminal position provides redundancy and improved signal integrity, ensuring reliable data transmission and reducing the risk of errors.
The maximum seated height of 31.4mm allows for compatibility with various system configurations and designs, offering versatility in installation.
The slim width of 4.3mm contributes to space-saving and compact designs, making the product suitable for small form factor devices.
The low minimum supply voltage of 1.14V ensures stable and reliable operation, even under varying voltage conditions, enhancing system performance.
The length of 133.35mm offers compatibility with standard system configurations and allows for easy integration into a wide range of electronic devices.
Dual bank page burst access mode enables simultaneous access to multiple memory banks, improving data transfer rates and overall system performance.
CMOS technology offers low power consumption, high speed, and reliability, making the memory module energy-efficient and suitable for various applications.
The no-lead terminal form ensures environmentally friendly and RoHS-compliant construction, reducing harmful substances and promoting sustainability.
The high number of words indicates a large memory capacity, allowing for storage of extensive data and enabling multitasking and high-performance computing.
A memory width of 72 bits enables efficient data transfer and processing, enhancing system performance and enabling high-speed operation.
Indicating a 2G word code signifies a high memory capacity and data storage capability, suitable for demanding applications and large datasets.
The maximum supply voltage of 1.26V ensures compatibility with standard voltage levels, offering flexibility in system integration and operation.
The high memory density of 154618822656 bits provides ample storage capacity for large datasets and demanding applications, enabling efficient data handling.
The DDR DRAM module offers high-speed data transfer rates, low latency, and reliable performance, making it ideal for gaming, multimedia, and computing tasks.
DRAM M393A2G40EB2-CTD attributes and parameters. Explore more DRAM devices from Samsung
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M393A2G40EB2-CTD Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
LIS3DHTR
STMicroelectronics
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
2N2222A
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358AN
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NC7WZ17P6X
Onsemi
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
Samsung
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
IS42S16320F-7TLI-TR
Integrated Silicon Solution
IS42S16320F-7TLI-TR by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 536870912-bit memory density. Operating at 3.3V, it features a max access time of 5.4ns and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in compact spaces.
AS4C4M16SA-7TCNTR
Alliance Memory
AS4C4M16SA-7TCNTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization and 16-bit memory width. Operating at temperatures from 0 to 70°C, it features self-refresh mode and offers a memory density of 67108864 bits. Ideal for applications requiring fast access times and high memory capacity in compact spaces.
S70KS1282GABHB030
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Maximum Supply Voltage (Vsup): 2 V;
K4T1G164QF-BIE6
Samsung's K4T1G164QF-BIE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast data processing and storage with a low standby current of 0.01 Amp.
MT48LC4M32B2P-6AXIT:LTR
Micron Technology
Micron Technology's MT48LC4M32B2P-6AXIT:LTR is a 4MX32 Synchronous DRAM with a memory density of 134217728 bits. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.
MT41K512M16HA-107:A
Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
W3H32M64E-533SBI
Microsemi
Microsemi's W3H32M64E-533SBI DDR2 DRAM features 32MX64 organization, 1.8V supply voltage, and operates synchronously. Ideal for industrial applications with a temperature range of -40 to 85°C, it offers self-refresh capability and a memory density of 2147483648 bits.
MT53E512M32D2FW-046AAT:D
Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.
MT48LC16M16A2P-6AXIT:G
Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
KM416C256BJ-6
Samsung's KM416C256BJ-6 is a 256Kx16 DRAM with 3-STATE output, operating at 5V. It features fast page access mode, 60ns max access time, and 512 refresh cycles. Ideal for applications requiring high-speed memory such as computers, servers, and networking devices.
MT48LC16M16A2P-7EIT:G
Micron Technology's MT48LC16M16A2P-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access in harsh environments.
MT47H64M16NF-25E:MTR
MT47H64M16NF-25E:MTR by Micron Technology is a 1.8V DDR2 DRAM with 64M words and 16-bit memory width. It operates synchronously, has self-refresh capability, and can withstand temperatures up to 85°C. It is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
MT40A1G8SA-062EIT:R
Micron Technology's MT40A1G8SA-062EIT:R is a DDR4 DRAM with 1GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT4KTF25664HZ-1G9P1
Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.
MT40A1G8WE-083EIT:B
Micron Technology's MT40A1G8WE-083EIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access speeds.
MTA18ASF2G72AZ-2G3A1
Micron Technology's MTA18ASF2G72AZ-2G3A1 is a DDR DRAM MODULE with 2GX72 organization, 72 memory width, and 154618822656 bit memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in servers or workstations.
MT41K128M16JT-107:K
Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.
K4A8G165WC-BCTD
Samsung's K4A8G165WC-BCTD is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. Operating at 1.2V, it offers 8589934592 bit memory density and supports multi-bank page burst access mode. Ideal for applications requiring high-speed data processing in compact devices due to its thin profile and fine pitch package style.
M393A2K43CB2-CVF
Samsung's M393A2K43CB2-CVF DDR4 DRAM module features 16GX8 organization, 1.2V supply voltage, and 137.4Gb memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst capability in a compact MICROELECTRONIC ASSEMBLY package.
MT40A2G8AG-062EAAT:F
Micron Technology's MT40A2G8AG-062EAAT:F is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a thin profile grid array package, suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
DDR4 DRAM MODULE; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; Organization: 16GX8; Surface Mount: NO;
M393A2K43DB3-CWE
DDR4 DRAM MODULE; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Ports: 1; Technology: CMOS;
M393B1K70DH0-CK0
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
M393B1K70DH0-YH9
M393B2G70BH0-YH9
DRAMs; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
M393B4G70DM0-YK0
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
M393B5673GB0-CH9
M393A2G40DB0-CRC
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1; Terminal Form: NO LEAD;
M393A1G43DB1-CRC
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
M393A2G40EB1-CPB
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1; Nominal Supply Voltage / Vsup (V): 1.2;
M393A2G40DB0-CPB
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 3.9 mm; Surface Mount: NO;
M393A1G43DB0-CRC
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
M393A2G40DB1-CRC
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
M393A1G40EB1-CPB
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 77309411328 bit; Terminal Position: DUAL;
M393A2G40EB1-CRC
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY; Terminal Position: DUAL;
M393A1G40DB0-CRC
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 1G; Technology: CMOS;
M393A1G40EB1-CRC
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V; Terminal Form: NO LEAD;
M393A1G43EB1-CRC
M393A1G43EB1-CTD
DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES; Access Mode: DUAL BANK PAGE BURST;
Supply Digital Components
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