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IS42S32800G-7BLI

Integrated Silicon Solution

IS42S32800G-7BLI by Integrated Silicon Solution

IS42S32800G-7BLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has a min operating temperature of -40 °C. It is commonly used in industrial applications requiring high-speed memory access.

Median Price

$9.620

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 675 parts In-Stock

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$9.620

100+ parts

$7.630

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$7.390

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675

$9.620

$7.630

$7.390

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Nova Conductors

Japan . 100 parts In-Stock

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$7.889

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100

$7.889

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Chip Stock

USA . 13,750 parts In-Stock

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Vyrian

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Inventory MP

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Bristol Electronics

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Continental Prestige Electronics

USA . 1,309 parts In-Stock

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$7.889

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$7.731

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$7.731

AZTECH Wire

Italy . 767 parts In-Stock

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$15.582

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Futuretech Components

Singapore . 2,400 parts In-Stock

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Argo Parts USA

USA . 2,098 parts In-Stock

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Perfect Parts

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Bastille Electronics

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Overview

Discover the IS42S32800G-7BLI, a high-quality DRAM by Integrated Silicon Solution. With its advanced technology and reliable performance, this memory module is perfect for various applications. Whether you're designing a gaming system or a data-intensive application, the IS42S32800G-7BLI offers exceptional value, benefits, and advantages. Its synchronous operation, self-refresh capability, and common input/output type ensure seamless functionality. Plus, with a wide temperature range and industrial-grade durability, this product can withstand even the harshest conditions. Trust Integrated Silicon Solution for top-notch memory solutions that deliver unparalleled performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes the DRAM easy to install on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other system components, resulting in optimized performance.

Nominal Supply Voltage / Vsup (V): 3.3

Having a nominal supply voltage of 3.3V ensures compatibility with standard power sources and reduces the risk of overvoltage damage.

Memory IC Type: SYNCHRONOUS DRAM

The use of synchronous DRAM technology offers improved data transfer rates and overall system efficiency.

Technical Specifications

DRAM IS42S32800G-7BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.003 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

270 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S32800G-7BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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