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IS46TR16256AL-125KBLA2

Integrated Silicon Solution

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,657 parts In-Stock

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Cyclops Electronics Ltd

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Nova Conductors

Japan . 650 parts In-Stock

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Corohmni

South Africa . 405 parts In-Stock

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$4.982

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Aztec Data Supply Inc.

USA . 4,729 parts In-Stock

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AZTECH Wire

Italy . 276 parts In-Stock

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Lixinc

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Argo Parts USA

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Authorized Procurement Solutions

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RC Electronics

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Continental Prestige Electronics

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Kepictronics

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Bastille Electronics

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Overview

Discover the cutting-edge IS46TR16256AL-125KBLA2 by Integrated Silicon Solution, a top-tier manufacturer in the DRAM category. This innovative product offers unparalleled quality and reliability for various applications. With its advanced features like synchronous operation and self-refresh capability, this DDR3L DRAM memory promises superior performance. Boost your system's efficiency and speed with the value and benefits that this high-quality memory solution delivers. Upgrade to excellence with Integrated Silicon Solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the DRAM chip, ensuring reliable performance over time.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination of data transfer, optimizing performance.

Nominal Supply Voltage / Vsup (V): 1.35

Low power consumption at a nominal voltage of 1.35V, making it energy efficient.

Maximum Clock Frequency (fCLK): 800 MHz

High clock frequency enables fast data processing and transfer speeds, improving overall system performance.

Memory IC Type: DDR3L DRAM

Utilizes DDR3L technology for high-speed data storage and retrieval, ensuring smooth operation in demanding applications.

Refresh Cycles: 8192

Efficiently manages data refresh cycles to maintain data integrity and prevent memory errors.

Technical Specifications

DRAM IS46TR16256AL-125KBLA2 attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.1 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.35

Qualification:

Not Qualified

Refresh Cycles:

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.016 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

243 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

IS46TR16256AL-125KBLA2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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