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IS46TR16256BL-125KBLA2-TR

Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

Median Price

$8.521

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 3,000 parts In-Stock

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Arrow

USA . 1,500 parts In-Stock

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$8.521

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TME

Poland . 106,275 parts In-Stock

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$12.930

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Vyrian

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NAC Semi

USA . 6,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 492 parts In-Stock

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$8.170

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Eastek

USA . 9,000 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Bastille Electronics

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Overview

Discover the cutting-edge technology of the IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS provides top-quality DRAM products for a wide range of applications. With a focus on innovation and performance, this DDR3L DRAM offers unparalleled reliability and efficiency. Experience seamless operation with its synchronous design and common input/output type. Elevate your projects with the value and benefits that ISS brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, making it a reliable choice for long-term use.

Surface Mount: YES

With surface mount capability, this DRAM is easy to install and saves space on the PCB, making it efficient for compact designs.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into a variety of electronic devices, enhancing versatility.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfers, improving overall system performance.

Self Refresh: YES

The self-refresh feature helps to conserve power and maintain data integrity during idle periods, enhancing energy efficiency.

Nominal Supply Voltage / Vsup (V): 1.35

Operating at a low nominal supply voltage helps reduce power consumption without compromising performance.

No. of Terminals: 96

With a high number of terminals, this DRAM offers enhanced connectivity and data transfer capabilities.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array style, thin profile, and fine pitch design make this DRAM suitable for dense PCB layouts and high-density memory configurations.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature tolerance allows this DRAM to perform reliably in various environmental conditions.

Organization: 256MX16

The high organization of 256MX16 provides ample memory capacity for storing and accessing a large amount of data.

Minimum Operating Temperature: -40 °C

The wide range of minimum operating temperature ensures consistent performance in extreme temperature environments.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper offers excellent conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

With terminals located at the bottom, this DRAM facilitates easy and secure installation on the PCB.

Maximum Seated Height: 1.2 mm

The low maximum seated height of 1.2 mm allows for slim and compact device designs.

Maximum Clock Frequency (fCLK): 800 MHz

Operating at a maximum clock frequency of 800 MHz, this DRAM delivers high-speed data processing for demanding applications.

Technical Specifications

DRAM IS46TR16256BL-125KBLA2-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.028 Amp

Maximum Supply Current:

228 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Trade Compliance

IS46TR16256BL-125KBLA2-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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