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MTA36ASF4G72PZ-2G3B1

Micron Technology

MTA36ASF4G72PZ-2G3B1 by Micron Technology

Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.

Median Price

$45.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Amazon

USA . 37 parts In-Stock

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$40.360

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Star Micro Inc

. 60 parts In-Stock

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$45.000

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Newegg

USA . 141 parts In-Stock

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$49.690

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Vyrian

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Digiode

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Chip Stock

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Nova Conductors

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AZTECH Wire

Italy . 736 parts In-Stock

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$9.560

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Ampacity Inc.

Singapore . 1,258 parts In-Stock

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$23.000

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Perfect Parts

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Aranea Global

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Overview

Elevate your system's performance with the Micron Technology MTA36ASF4G72PZ-2G3B1 DDR DRAM MODULE. Manufactured by industry leader Micron Technology, this high-quality memory module offers unparalleled reliability and efficiency for a wide range of applications. With its advanced technology and innovative design, this product ensures seamless operation and optimal performance. Experience faster speeds, improved multitasking capabilities, and enhanced overall efficiency with the MTA36ASF4G72PZ-2G3B1. Upgrade your system today and unlock its full potential with Micron Technology.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy installation and fitting into various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and synchronized data transfer, improving overall system performance.

Self Refresh: YES

Self-refresh capability helps in conserving power and extending battery life in mobile devices.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at 1.2V reduces power consumption while maintaining stable performance.

No. of Terminals: 288

Higher number of terminals allow for more data connections and faster data transfer rates.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly offers compact size and efficient heat dissipation, making it suitable for space-constrained applications.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature, this product can withstand demanding thermal conditions.

Organization: 4GX72

Organized as 4GX72 provides a balance between capacity and speed, suitable for a variety of computing tasks.

Minimum Operating Temperature: 0 °C

Capable of operating at low temperatures, ensuring reliability in various environments.

Terminal Position: DUAL

Dual terminal position offers redundancy and flexibility in connecting to different systems.

Maximum Seated Height: 31.4 mm

Low seated height allows for installation in slim devices without compromising performance.

Width: 3.9 mm

Narrow width enables easy integration into compact systems where space is limited.

Minimum Supply Voltage (Vsup): 1.14 V

Operates at a low minimum supply voltage, saving power and reducing heat generation.

Length: 133.35 mm

Moderate length provides a good balance between size and capacity for various applications.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode enhances data retrieval speed and efficiency in multitasking environments.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high-performance operation.

Terminal Form: NO LEAD

No lead terminal form reduces the risk of solder joint failure and improves reliability.

No. of Words: 4294967296 words

High capacity of words allows for storing large amounts of data and running memory-intensive applications smoothly.

Memory Width: 72

Wide memory width enables efficient data transfer and processing, enhancing overall system performance.

No. of Words Code: 4G

4G words code indicates high capacity and capability to handle complex computing tasks.

Maximum Supply Voltage (Vsup): 1.26 V

Operating at a maximum supply voltage of 1.26V ensures stability and optimal performance under varying load conditions.

Memory Density: 309237645312 bit

High memory density allows for storing vast amounts of data, making it suitable for memory-intensive applications.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module offers high-speed data transfer rates and low latency, ideal for high-performance computing tasks.

Technical Specifications

DRAM MTA36ASF4G72PZ-2G3B1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

309237645312 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.4 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA36ASF4G72PZ-2G3B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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