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MTA36ASF2G72PZ-2G3B1

Micron Technology

MTA36ASF2G72PZ-2G3B1 by Micron Technology

Micron Technology's MTA36ASF2G72PZ-2G3B1 is a DDR DRAM MODULE with 2GX72 organization, 72-bit memory width, and 154.6 Gb density. Operating in synchronous mode at 1.2V, it suits applications requiring high-speed data processing and storage in servers or workstations.

Median Price

$19.480

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Amazon

USA . 62 parts In-Stock

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$19.480

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Chip Stock

USA . 4,738 parts In-Stock

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Vyrian

USA . 3,090 parts In-Stock

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Digiode

USA . 1,833 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Component Sense

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AZTECH Wire

Italy . 285 parts In-Stock

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$14.760

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Ampacity Inc.

Singapore . 853 parts In-Stock

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$24.000

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Continental Prestige Electronics

USA . 4,263 parts In-Stock

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Argo Parts USA

USA . 2,431 parts In-Stock

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Corphita

USA . 2,015 parts In-Stock

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Aranea Global

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Overview

Unlock the power of cutting-edge technology with the MTA36ASF2G72PZ-2G3B1 by Micron Technology. As a leading manufacturer in the industry, Micron ensures top-quality DRAM modules that provide seamless performance and reliability. Ideal for a wide range of applications, this synchronous operating mode module offers self-refresh capabilities and a nominal supply voltage of 1.2V. With its dual bank page burst access mode, this DDR DRAM module delivers exceptional speed and efficiency. Elevate your system's performance with Micron's MTA36ASF2G72PZ-2G3B1 and experience unparalleled value and benefits like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

This shape allows for easy integration and stacking in electronic devices, making it a convenient choice for manufacturers.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise data transfer and synchronization with the system clock, enhancing performance and reliability.

Self Refresh: YES

The self-refresh capability ensures data retention even in the absence of external power, providing added reliability and data integrity.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a lower supply voltage reduces power consumption and heat generation, contributing to improved energy efficiency.

No. of Terminals: 288

Having a higher number of terminals allows for more data transfer channels, enabling faster communication and data processing in the device.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly style offers compact packaging and efficient use of space, ideal for small form factor devices.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this DRAM module can withstand demanding environmental conditions, ensuring reliability in various applications.

Organization: 2GX72

The 2GX72 organization provides a high memory capacity and efficient data organization, suitable for applications requiring large storage capabilities.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature allows for reliable performance in cold environments, making it suitable for a wide range of operating conditions.

Terminal Position: DUAL

Dual terminal position allows for increased data transfer rates and improved signal integrity, enhancing overall performance.

Maximum Seated Height: 31.4 mm

The compact seated height of 31.4 mm enables easy integration into devices with limited space, providing flexibility in design and layout.

Width: 3.9 mm

The narrow width of 3.9 mm allows for efficient placement on circuit boards and compact device designs, enhancing overall compactness and integration.

Minimum Supply Voltage (Vsup): 1.14 V

The low minimum supply voltage ensures compatibility with a wide range of power sources while maintaining reliable performance and energy efficiency.

Length: 133.35 mm

The length of 133.35 mm offers compatibility with standard electronic layouts and provides flexibility in device integration and placement.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode allows for efficient data retrieval and storage, improving overall system performance and data access speeds.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making it an energy-efficient and high-performance choice for memory modules.

Terminal Form: NO LEAD

The no lead terminal form simplifies the manufacturing process and reduces environmental impact, making it a more sustainable choice for electronic devices.

No. of Words: 2147483648 words

With a high number of words, this DRAM module offers a large memory capacity for storing and accessing a significant amount of data, suitable for memory-intensive applications.

Memory Width: 72

A memory width of 72 bits allows for efficient data transfer and processing, enhancing system performance and data handling capabilities.

No. of Words Code: 2G

The 2G words code indicates a high memory capacity of 2 gigabytes, providing sufficient storage space for a wide range of applications and data processing tasks.

Maximum Supply Voltage (Vsup): 1.26 V

The maximum supply voltage of 1.26 V ensures compatibility with common power sources while allowing for stable and reliable operation in a variety of environments.

Memory Density: 154618822656 bit

With a high memory density of 154618822656 bits, this DRAM module offers ample storage capacity for handling large volumes of data, making it suitable for memory-intensive applications.

Memory IC Type: DDR DRAM MODULE

Based on DDR DRAM technology, this memory module offers high data transfer rates and efficient memory access, making it ideal for high-performance computing and data processing tasks.

Technical Specifications

DRAM MTA36ASF2G72PZ-2G3B1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.4 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA36ASF2G72PZ-2G3B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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