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MTA36ASF2G72PZ-2G1B1

Micron Technology

MTA36ASF2G72PZ-2G1B1 by Micron Technology

Micron Technology's MTA36ASF2G72PZ-2G1B1 is a DDR DRAM MODULE with 2GX72 organization and 72-bit memory width. Operating at 1.2V, it offers 154618822656 bits of memory density. Ideal for applications requiring synchronous operation and self-refresh capabilities in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 13,900 parts In-Stock

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Vyrian

USA . 7,184 parts In-Stock

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Digiode

USA . 2,370 parts In-Stock

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Nova Conductors

Japan . 48 parts In-Stock

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AZTECH Wire

Italy . 568 parts In-Stock

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$13.610

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568

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Ampacity Inc.

Singapore . 1,353 parts In-Stock

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$17.000

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Argo Parts USA

USA . 5,633 parts In-Stock

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Continental Prestige Electronics

USA . 2,244 parts In-Stock

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Corphita

USA . 427 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Elevate your system's performance with the MTA36ASF2G72PZ-2G1B1 by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch quality and reliability in their DRAM products. This memory module operates in synchronous mode with self-refresh capabilities, offering seamless performance under various applications. With a nominal supply voltage of 1.2V and a memory density of 154618822656 bits, this module ensures efficient power consumption without compromising on speed. Upgrade your system today with Micron Technology's MTA36ASF2G72PZ-2G1B1 for an enhanced computing experience.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape is a standard shape that is easy to integrate into various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and data transfer synchronization, enhancing performance.

Self Refresh: YES

Self refresh capability helps in saving power when the device is not actively in use.

Nominal Supply Voltage / Vsup (V): 1.2

Low nominal supply voltage helps in reducing power consumption without compromising performance.

No. of Terminals: 288

Higher number of terminals allow for more connectivity options and better data transfer rates.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures stable performance even in harsh environmental conditions.

Organization: 2GX72

Organized in 2GB chunks with a memory width of 72 bits, providing ample storage capacity and data transfer efficiency.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for reliable performance in a wide range of environments.

Terminal Position: DUAL

Dual terminal position enhances connectivity options and data transfer speeds.

Maximum Seated Height: 31.4 mm

Compact maximum seated height allows for easy integration in space-constrained devices.

Width: 3.9 mm

Narrow width facilitates installation in slim devices while not compromising on performance.

Minimum Supply Voltage (Vsup): 1.14 V

Low minimum supply voltage ensures efficient power consumption without sacrificing performance.

Length: 133.35 mm

Long length provides ample space for data storage and transfer capabilities.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode allows for faster data retrieval and transfer rates.

Technology: CMOS

CMOS technology ensures low power consumption and high performance efficiency.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and ensures easy recycling.

No. of Words: 2147483648 words

Large number of words allow for extensive data storage and retrieval capabilities.

Memory Width: 72

Wider memory width enhances data transfer rates and efficiency.

No. of Words Code: 2G

2G word code provides clear classification of storage capacity for easy identification.

Maximum Supply Voltage (Vsup): 1.26 V

Higher maximum supply voltage ensures stable and reliable performance under varying voltage conditions.

Memory Density: 154618822656 bit

High memory density allows for extensive data storage capacities.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module is a high-performance memory module suitable for a wide range of applications.

Technical Specifications

DRAM MTA36ASF2G72PZ-2G1B1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.4 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA36ASF2G72PZ-2G1B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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