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MT48LC8M16A2TG-7E

Micron Technology

MT48LC8M16A2TG-7E by Micron Technology

Micron Technology's MT48LC8M16A2TG-7E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for commercial applications requiring fast memory access and low power consumption.

Median Price

$7.220

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Freelance Electronics

USA . 28 parts In-Stock

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$2.899

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$3.044

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$2.870

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Component Electronics Inc.

Canada . 1 parts In-Stock

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$8.650

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Vyrian

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Touchstone Systems

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Digiode

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Prism Electronics

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First Choice Components Inc.

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Semtec, LLC

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Dan-Mar Components

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EPE Components Inc.

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Nova Conductors

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Legend Electronics Inc.

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Quantum Digital Technology

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Global Solutions Electronics Company

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Connector Distribution Corp

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Right Parts Inc.

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ACDS - Activité Composants Distribution Service

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Sea View Technologies

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Holdelec - ElecDif-Pro

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Inventory MP

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Bristol Electronics

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North Shore Components

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Atlantic Semiconductor

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Cogito LLC

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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NAC Semi

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Speed Components Ltd

Israel . 5 parts In-Stock

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ComSIT Distribution GmbH

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EMSNET

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AZTECH Wire

Italy . 195 parts In-Stock

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$5.500

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Andel Nordic

Denmark . 3,596 parts In-Stock

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$10.470

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$10.051

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Ampacity Inc.

Singapore . 373 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,783 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

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Corphita

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Continental Prestige Electronics

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Perfect Parts

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Assy Fe

Spain . 1,000 parts In-Stock

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ChipTracer

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Ashlea Components Ltd (Excess)

UK . 59 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 37 parts In-Stock

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Glotronic Ltd.

UK . 30 parts In-Stock

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Pacific Micro-Tech

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Fairview Electronics Ltd

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Overview

Experience the exceptional performance and reliability of Micron Technology with the MT48LC8M16A2TG-7E DRAM module. This high-quality memory device offers unparalleled value and benefits, perfect for a wide range of applications. With its advanced technology and innovative design, Micron Technology ensures that customers receive top-notch products that deliver superior performance and efficiency. Upgrade your system with the MT48LC8M16A2TG-7E and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the package resistant to physical damage during handling and installation.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for accurate timing and control of data flow, increasing efficiency and performance of the DRAM.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage of 3.3V provides power efficiency and compatibility with a wide range of systems and applications.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency enables fast data transfer rates and responsive performance, ideal for demanding computing tasks.

Memory Density: 134217728 bit

High memory density allows storage of a large amount of data, catering to the needs of high-performance computing and data-intensive applications.

Technical Specifications

DRAM MT48LC8M16A2TG-7E attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e0

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

330 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC8M16A2TG-7E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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