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S27KS0642GABHI023

Infineon Technologies

S27KS0642GABHI023 by Infineon Technologies

Infineon's S27KS0642GABHI023 DRAM features 8MX8 organization, 200 MHz clock frequency, and 67108864 bit memory density. Ideal for applications requiring high-speed synchronous operation in a compact form factor with low power consumption.

Median Price

$4.510

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5 parts In-Stock

1+ parts

$4.510

100+ parts

$3.900

1k+ parts

$3.590

10k+ parts

$3.480

5

$4.510

$3.900

$3.590

$3.480

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,599 parts In-Stock

1+ parts

-

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1,599

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Nova Conductors

Japan . 79 parts In-Stock

1+ parts

-

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-

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79

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Digiode

USA . 33 parts In-Stock

1+ parts

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33

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,444 parts In-Stock

1+ parts

$3.360

100+ parts

-

1k+ parts

-

10k+ parts

-

1,444

$3.360

-

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Modulus Dynamics

Lithuania . 6,055 parts In-Stock

1+ parts

$4.263

100+ parts

$4.092

1k+ parts

$3.922

10k+ parts

-

6,055

$4.263

$4.092

$3.922

-

Continental Prestige Electronics

USA . 6,972 parts In-Stock

1+ parts

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6,972

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QUARKTWIN TECHNOLOGY LTD

USA . 2,579 parts In-Stock

1+ parts

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2,579

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Argo Parts USA

USA . 1,414 parts In-Stock

1+ parts

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1,414

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Bastille Electronics

Australia . 777 parts In-Stock

1+ parts

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777

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Corphita

USA . 121 parts In-Stock

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121

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Overview

Experience lightning-fast performance and unparalleled reliability with the S27KS0642GABHI023 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies brings you top-quality DRAM products that are perfect for a wide range of applications. With its synchronous operating mode and self-refresh capabilities, this memory chip offers seamless functionality and high-speed data processing. Say goodbye to slow loading times and hello to improved efficiency with the S27KS0642GABHI023. Upgrade your devices today and experience the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM chip, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components, optimizing performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a lower voltage can contribute to energy efficiency and reduced power consumption.

Memory Density: 67108864 bit

High memory density allows for storing a large amount of data in a compact form factor, ideal for various applications.

Maximum Clock Frequency (fCLK): 200 MHz

A high clock frequency enables quick data access and processing, making the DRAM suitable for high-performance tasks.

Technical Specifications

DRAM S27KS0642GABHI023 attributes and parameters. Explore more DRAM devices from Infineon Technologies

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Standby Current:

.00022 Amp

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

S27KS0642GABHI023 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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