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MT46H64M16LFBF-5AIT:B

Micron Technology

MT46H64M16LFBF-5AIT:B by Micron Technology

Micron Technology's MT46H64M16LFBF-5AIT:B is a 64MX16 DDR1 DRAM with 67108864 words. It operates at 200 MHz, has a memory density of 1073741824 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring fast data access and high memory capacity.

Median Price

$8.650

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,582 parts In-Stock

1+ parts

$8.650

100+ parts

$7.410

1k+ parts

$6.690

10k+ parts

-

1,582

$8.650

$7.410

$6.690

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$7.040

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$7.040

-

-

-

Digiode

USA . 2,129 parts In-Stock

1+ parts

$8.522

100+ parts

-

1k+ parts

-

10k+ parts

-

2,129

$8.522

-

-

-

NexGen Digital

USA . 3,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,422

-

-

-

-

Vyrian

USA . 2,378 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,378

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 137 parts In-Stock

1+ parts

$2.950

100+ parts

-

1k+ parts

-

10k+ parts

-

137

$2.950

-

-

-

Corohmni

South Africa . 28 parts In-Stock

1+ parts

$3.272

100+ parts

-

1k+ parts

-

10k+ parts

-

28

$3.272

-

-

-

Continental Prestige Electronics

USA . 5,184 parts In-Stock

1+ parts

$7.040

100+ parts

-

1k+ parts

-

10k+ parts

$6.899

5,184

$7.040

-

-

$6.899

Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

$7.040

100+ parts

$6.688

1k+ parts

-

10k+ parts

$6.266

1,000

$7.040

$6.688

-

$6.266

Corphita

USA . 1,987 parts In-Stock

1+ parts

$8.073

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

$8.073

-

-

-

Ampacity Inc.

Singapore . 2,394 parts In-Stock

1+ parts

$14.340

100+ parts

-

1k+ parts

-

10k+ parts

-

2,394

$14.340

-

-

-

A-Z Elektronik GmbH

Germany . 7,584 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,584

-

-

-

-

Argo Parts USA

USA . 3,077 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,077

-

-

-

-

Kepictronics

USA . 1,165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,165

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Enhance your devices with the high-quality MT46H64M16LFBF-5AIT:B by Micron Technology, a leading manufacturer in the DRAM category. This advanced memory module offers exceptional performance and reliability, making it perfect for a wide range of applications. With its innovative technology and top-notch features, this product provides exceptional value, benefits, and advantages to customers seeking superior memory solutions. Upgrade your system today with Micron Technology's cutting-edge DRAM!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, making it a reliable choice for long-lasting use.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization with other components, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Stable supply voltage ensures consistent and reliable operation of the DRAM, leading to improved system stability.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency enables fast data transfer and processing speed, enhancing the overall performance of the system.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the DRAM energy-efficient and reliable for various applications.

Memory IC Type: DDR1 DRAM

DDR1 DRAM technology provides high-speed data transfer rates, improving system responsiveness and efficiency.

Technical Specifications

DRAM MT46H64M16LFBF-5AIT:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,9X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

135 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT46H64M16LFBF-5AIT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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