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MT46H32M16LFBF-5AIT:C

Micron Technology

MT46H32M16LFBF-5AIT:C by Micron Technology

Micron Technology's MT46H32M16LFBF-5AIT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. Operating at 200 MHz, it features a very thin profile package style and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 21,200 parts In-Stock

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21,200

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Vyrian

USA . 4,794 parts In-Stock

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4,794

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Touchstone Systems

USA . 1,500 parts In-Stock

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1,500

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Nova Conductors

Japan . 870 parts In-Stock

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870

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ComSIT Distribution GmbH

Germany . 290 parts In-Stock

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290

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Digiode

USA . 287 parts In-Stock

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287

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ComSIT USA

USA . 240 parts In-Stock

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240

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 313 parts In-Stock

1+ parts

$3.070

100+ parts

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313

$3.070

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Corohmni

South Africa . 1,023 parts In-Stock

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$4.290

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$4.290

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Ampacity Inc.

Singapore . 1,498 parts In-Stock

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$12.000

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$12.000

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AZTECH Wire

Italy . 723 parts In-Stock

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$18.120

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723

$18.120

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Component Stockers USA

USA . 1,784 parts In-Stock

1+ parts

$23.480

100+ parts

$22.300

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$21.600

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1,784

$23.480

$22.300

$21.600

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Kepictronics

USA . 12,948 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Perfect Parts

USA . 5,988 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Continental Prestige Electronics

USA . 3,052 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Corphita

USA . 1,602 parts In-Stock

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Argo Parts USA

USA . 1,152 parts In-Stock

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Microchip USA

USA . 327 parts In-Stock

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327

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Bastille Electronics

Australia . 72 parts In-Stock

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Overview

Experience the superior quality and performance of Micron Technology's MT46H32M16LFBF-5AIT:C DRAM. With a reputation for innovation and reliability, Micron Technology is a trusted manufacturer in the industry. This cutting-edge memory module is perfect for a variety of applications, offering fast and efficient data processing. Enhance your system with this high-quality product that provides value, benefits, and advantages to customers looking for top-notch performance and reliability. Trust Micron Technology for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, which is ideal for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and controlled rate, improving overall performance of the DRAM.

Nominal Supply Voltage / Vsup (V): 1.8

The 1.8V supply voltage allows for efficient power usage while maintaining reliable operation of the DRAM.

Maximum Clock Frequency (fCLK): 200 MHz

With a maximum clock frequency of 200 MHz, this DRAM can support high-speed data processing and multitasking applications.

Memory IC Type: LPDDR1 DRAM

LPDDR1 DRAM provides low power consumption and high performance, making it suitable for mobile devices and other power-sensitive applications.

Technical Specifications

DRAM MT46H32M16LFBF-5AIT:C attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,9X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

115 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT46H32M16LFBF-5AIT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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