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MT48LC16M16A2P-7E

Micron Technology

MT48LC16M16A2P-7E by Micron Technology

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

Median Price

$4.671

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Nova Conductors

Japan . 500 parts In-Stock

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Chip Stock

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Digiode

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Vyrian

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Holdelec - ElecDif-Pro

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Bristol Electronics

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Corohmni

South Africa . 144 parts In-Stock

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$4.075

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Continental Prestige Electronics

USA . 127 parts In-Stock

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$4.671

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$4.578

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Aztec Data Supply Inc.

USA . 1,660 parts In-Stock

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$5.620

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AZTECH Wire

Italy . 506 parts In-Stock

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Andel Nordic

Denmark . 5,741 parts In-Stock

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$10.684

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Ampacity Inc.

Singapore . 682 parts In-Stock

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$23.000

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S.R.D Solutions

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RC Electronics

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A-Z Elektronik GmbH

Germany . 2,687 parts In-Stock

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Argo Parts USA

USA . 2,279 parts In-Stock

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Corphita

USA . 607 parts In-Stock

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Perfect Parts

USA . 560 parts In-Stock

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Overview

Discover the MT48LC16M16A2P-7E by Micron Technology, a high-quality DRAM that offers impressive performance and reliability. As a leading manufacturer in the industry, Micron Technology is known for its cutting-edge advancements and innovative solutions. This product is perfect for various applications, providing synchronous operation and self-refresh capabilities. With its compact design and durable plastic/epoxy package body material, it is easy to integrate into any system. Experience the benefits of this product, from its common input/output type to its low power consumption. Trust Micron Technology for your memory needs and unlock the full potential of your devices with the MT48LC16M16A2P-7E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material ensures durability and protection, making it suitable for various applications.

Surface Mount: YES

The surface mount capability of this product allows for easy installation and integration into electronic devices.

No. of Functions: 1

With a single function, this product offers simplicity and efficiency in its usage and operation.

Package Shape: RECTANGULAR

The rectangular package shape of this product provides a compact and space-saving design, making it ideal for devices with limited space.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient and reliable data transfers, enhancing the overall performance of the product.

Self Refresh: YES

The self-refresh feature allows the product to automatically refresh its data, ensuring data integrity and minimizing power consumption.

Input/Output Type: COMMON

This product utilizes a common I/O interface, making it compatible with various devices and systems.

Nominal Supply Voltage / Vsup (V): 3.3

With a nominal supply voltage of 3.3V, this product offers optimal power performance and compatibility with standard voltage requirements.

Power Supplies (V): 3.3

The product's power supplies with a voltage of 3.3V contribute to its efficient and stable operation.

No. of Terminals: 54

With 54 terminals, this product allows for reliable connections and compatibility with different interfaces and systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style of this product assists in space-constrained applications, providing flexibility in design and integration.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can reliably function under various environmental conditions.

Organization: 16MX16

The 16MX16 organization of this product enables it to store a large amount of data, making it suitable for high-capacity memory requirements.

Output Characteristics: 3-STATE

The 3-STATE output characteristics of this product allow for efficient control and management of data transmission, ensuring optimal signal integrity.

Minimum Operating Temperature: 0 °C

This product can operate reliably in low-temperature environments down to 0°C, increasing its versatility and usability.

Terminal Finish: Matte Tin (Sn)

The matte tin finish of the terminals provides corrosion resistance and excellent solderability, ensuring long-term reliability and ease of assembly.

Terminal Position: DUAL

The dual terminal position promotes better stability and increased signal integrity, making this product suitable for high-speed data transfer applications.

No. of Ports: 1

With a single port, this product simplifies connectivity and reduces complexity in system design and integration.

Maximum Seated Height: 1.2 mm

The maximum seated height of 1.2mm allows for efficient placement and space utilization, enabling compact designs in electronic devices.

Maximum Clock Frequency (fCLK): 143 MHz

With a high maximum clock frequency of 143MHz, this product can handle demanding tasks and ensure fast data processing.

Width: 10.16 mm

The compact width of 10.16mm allows for easy integration into various electronic devices and compact system layouts.

Minimum Supply Voltage (Vsup): 3 V

With a minimum supply voltage of 3V, this product offers flexibility in power supply options while maintaining optimal performance.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time of 30 seconds at the peak reflow temperature ensures reliability during soldering processes, contributing to robust assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient and reliable soldering, ensuring proper assembly and connectivity.

Length: 22.22 mm

The length of 22.22mm provides versatility in design and allows for integration into various electronic devices and system layouts.

Temperature Grade: COMMERCIAL

This product has a commercial temperature grade, indicating its suitability for standard operating temperature ranges in commercial applications.

Access Mode: FOUR BANK PAGE BURST

The four-bank page burst access mode enhances data retrieval and performance, making this product well-suited for high-speed memory applications.

Technology: CMOS

The use of CMOS technology in this product ensures low power consumption, high-speed operation, and compatibility with a wide range of electronic devices.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical strength and provides secure attachment during assembly, ensuring reliability and long-term performance.

Maximum Supply Current: 285 mA

With a maximum supply current of 285mA, this product ensures stable power delivery and efficient operation within the specified current limits.

No. of Words: 16777216 words

The high number of words (16777216) in this product's memory capacity offers ample storage and supports applications with large data requirements.

Sequential Burst Length: 1,2,4,8,FP

The sequential burst length options of 1, 2, 4, 8, and full-page enhance data access flexibility and performance in different application scenarios.

Memory Width: 16

With a memory width of 16, this product provides efficient data transmission and storage capabilities, meeting the demands of various memory-intensive tasks.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8mm allows for precise and accurate connections, ensuring reliable signal transmission and compatibility.

No. of Words Code: 16M

The 16M words code designates the large memory capacity of this product, making it suitable for applications with extensive data storage requirements.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this product offers flexibility and compatibility with various voltage operating conditions.

Memory Density: 268435456 bit

The memory density of 268435456 bits in this product enables high-capacity data storage and retrieval, supporting memory-intensive applications.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, this product ensures efficient and synchronized data access and transfer, improving overall system performance.

Maximum Standby Current: 0.002 Amp

With a maximum standby current of 0.002 Amp, this product minimizes power consumption during idle periods, maximizing energy efficiency.

Refresh Cycles: 8192

The refresh cycles of 8192 in this product's memory enhance data integrity and reliability, ensuring accurate data retention over extended periods.

Interleaved Burst Length: 1,2,4,8

The interleaved burst length options of 1, 2, 4, and 8 provide flexibility in data access and retrieval, optimizing performance in different scenarios.

Maximum Access Time: 5.4 ns

With a maximum access time of 5.4 nanoseconds, this product ensures fast and efficient data retrieval, enabling quick processing and response times.

Technical Specifications

DRAM MT48LC16M16A2P-7E attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

285 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC16M16A2P-7E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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