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MT46V32M16P-6T:F

Micron Technology

MT46V32M16P-6T:F by Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

Median Price

$0.700

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 6 parts In-Stock

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$0.700

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6

$0.700

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DF Sales Co.

USA . 6 parts In-Stock

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$0.700

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6

$0.700

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Nova Conductors

Japan . 300 parts In-Stock

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$22.200

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$22.200

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Chip Stock

USA . 16,900 parts In-Stock

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16,900

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Vyrian

USA . 6,554 parts In-Stock

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Digiode

USA . 2,410 parts In-Stock

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Rebound Electronics

UK . 1,404 parts In-Stock

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Lantek

USA . 469 parts In-Stock

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469

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LIBRA Elektronik GmbH

Germany . 430 parts In-Stock

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430

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Prism Electronics

USA . 117 parts In-Stock

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Sogenti Electronics

Canada . 116 parts In-Stock

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Elcom Components

USA . 93 parts In-Stock

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Connector Distribution Corp

USA . 50 parts In-Stock

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50

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Right Parts Inc.

USA . 50 parts In-Stock

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50

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Speed Components Ltd

Israel . 47 parts In-Stock

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47

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ComSIT Distribution GmbH

Germany . 36 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 23 parts In-Stock

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Bristol Electronics

USA . 23 parts In-Stock

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Next Level Components, LLC

USA . 17 parts In-Stock

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Carlin Systems, Inc.

USA . 9 parts In-Stock

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Zilex Electronics Inc.

Canada . 7 parts In-Stock

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Flex Direct, LLC

USA . 2 parts In-Stock

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2

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EMSNET

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 539 parts In-Stock

1+ parts

$1.370

100+ parts

$1.300

1k+ parts

$1.260

10k+ parts

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539

$1.370

$1.300

$1.260

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Andel Nordic

Denmark . 6,884 parts In-Stock

1+ parts

$3.724

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$3.575

10k+ parts

$3.575

6,884

$3.724

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$3.575

$3.575

AZTECH Wire

Italy . 775 parts In-Stock

1+ parts

$12.015

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775

$12.015

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Continental Prestige Electronics

USA . 1,418 parts In-Stock

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$22.200

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$21.756

1,418

$22.200

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$21.756

Ampacity Inc.

Singapore . 223 parts In-Stock

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$25.000

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223

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Perfect Parts

USA . 13,796 parts In-Stock

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Kepictronics

USA . 5,700 parts In-Stock

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5,700

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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S.R.D Solutions

India . 5,000 parts In-Stock

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Benley Electronics

USA . 3,124 parts In-Stock

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Argo Parts USA

USA . 3,096 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$21.756

1k+ parts

$21.090

10k+ parts

$20.646

2,000

-

$21.756

$21.090

$20.646

Corphita

USA . 1,806 parts In-Stock

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1,806

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Futuretech Components

Singapore . 795 parts In-Stock

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795

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iodParts Technologies Inc.

India . 469 parts In-Stock

1+ parts

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469

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GreenTree Electronics

Israel . 469 parts In-Stock

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469

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Microchip USA

USA . 434 parts In-Stock

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434

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Speed Components Ltd (Excess)

Israel . 34 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 23 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the MT46V32M16P-6T:F by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch quality DRAM products that are perfect for a wide range of applications. With a focus on innovation and cutting-edge technology, this product offers customers unmatched value, benefits, and advantages. Trust Micron Technology to provide you with the superior memory solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and cost-effective.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving on PCBs.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and install in various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and coordinated data transfer within the system.

Self Refresh: YES

The self-refresh capability helps in maintaining data integrity during power interruptions.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage of 2.5V ensures energy efficiency and reduced power consumption.

Power Supplies (V): 2.5

The consistent power supply of 2.5V ensures stable performance of the product.

No. of Terminals: 66

The high number of terminals allows for seamless connectivity and communication within the system.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact package style saves space on the PCB and enables efficient cooling.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance in varying environmental conditions.

Organization: 32MX16

The organization of 32MX16 offers a high memory capacity for storing large amounts of data.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple devices to share the same data bus without interference.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C ensures the product can function in cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and reliable connections.

Terminal Position: DUAL

The dual terminal position allows for flexible installation options and ease of connection.

Maximum Seated Height: 1.2 mm

The low maximum seated height of 1.2mm ensures compatibility with slim devices and tight spaces.

Maximum Clock Frequency (fCLK): 166 MHz

The high maximum clock frequency of 166MHz allows for fast data processing and transfer speeds.

Width: 10.16 mm

The narrow width of 10.16mm saves space on the PCB and enhances overall system efficiency.

Minimum Supply Voltage (Vsup): 2.3 V

The minimum supply voltage of 2.3V ensures the product can operate efficiently even with low power sources.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures secure solder joints and stable performance.

Length: 22.22 mm

The moderate length of 22.22mm provides a balance between compactness and usability in various applications.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures compatibility with standard operating environments.

Access Mode: FOUR BANK PAGE BURST

The four-bank page burst access mode allows for efficient data retrieval and processing.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and reliable performance.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical strength and ease of soldering during installation.

Maximum Supply Current: 405 mA

The maximum supply current of 405mA ensures stable and consistent power delivery for optimal performance.

No. of Words: 33554432 words

The high number of words allows for extensive memory capacity and storage capabilities.

Sequential Burst Length: 2,4,8

The sequential burst length options provide flexibility in data transfer operations for different applications.

Memory Width: 16

The memory width of 16 ensures efficient data processing and storage capabilities.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65mm allows for compact layout designs and high-density packaging.

No. of Words Code: 32M

The 32M words code indicates high memory capacity and data storage capabilities.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level of 3 indicates the product can withstand moderate exposure to humidity without damage.

Maximum Supply Voltage (Vsup): 2.7 V

The maximum supply voltage of 2.7V ensures operational stability and compatibility with different power sources.

Memory Density: 536870912 bit

The high memory density of 536870912 bits provides ample storage space for data-intensive applications.

Memory IC Type: DDR1 DRAM

The DDR1 DRAM memory IC type offers fast data access and transfer speeds for enhanced performance.

Maximum Standby Current: 0.005 Amp

The low maximum standby current of 0.005A ensures energy efficiency during idle or standby modes.

Refresh Cycles: 8192

The 8192 refresh cycles maintain data integrity and prevent memory loss over time.

Interleaved Burst Length: 2,4,8

The interleaved burst length options offer flexibility in data transfer operations for enhanced performance.

Maximum Access Time: 0.7 ns

The fast maximum access time of 0.7ns ensures quick data retrieval and processing speeds.

Technical Specifications

DRAM MT46V32M16P-6T:F attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8

JESD-30 Code:

R-PDSO-G66

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

66

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP66,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8

Maximum Standby Current:

.005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

405 mA

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT46V32M16P-6T:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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