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MT48LC4M32B2P-6:G

Micron Technology

MT48LC4M32B2P-6:G by Micron Technology

Micron Technology's MT48LC4M32B2P-6:G is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a small outline package.

Median Price

$10.145

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Nova Conductors

Japan . 97 parts In-Stock

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Chip Stock

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Vyrian

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Sunrise Surplus Inc.

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Corel Iberica Componentes, S.L.

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Digiode

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Prism Electronics

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Elcom Components

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Avant Electronics Limited

UK . 200 parts In-Stock

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Goldney Electronics S.L.

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BCID Electronics Ltd.

Israel . 67 parts In-Stock

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Touchstone Systems

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Rebound Electronics

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Holdelec - ElecDif-Pro

France . 23 parts In-Stock

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PC Components Company LLC

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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Speed Components Ltd

Israel . 7 parts In-Stock

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Semtec, LLC

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Resion

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Semicontronic

India . 991 parts In-Stock

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$3.000

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$2.925

1k+ parts

$2.910

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991

$3.000

$2.925

$2.910

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Andel Nordic

Denmark . 11,157 parts In-Stock

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$4.653

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$4.466

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11,157

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$4.466

Aztec Data Supply Inc.

USA . 318 parts In-Stock

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$5.330

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Corohmni

South Africa . 285 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$10.145

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$9.942

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Continental Prestige Electronics

USA . 1,484 parts In-Stock

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$9.942

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$10.449

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$9.927

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$9.927

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Ampacity Inc.

Singapore . 1,040 parts In-Stock

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$16.000

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AZTECH Wire

Italy . 640 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,464 parts In-Stock

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Assy Fe

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Argo Parts USA

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Kepictronics

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S.R.D Solutions

India . 2,500 parts In-Stock

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Perfect Parts

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Corphita

USA . 995 parts In-Stock

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Microchip USA

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Cyclops Electronics Ltd (Excess)

UK . 326 parts In-Stock

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Computer Components Inc. - USA

USA . 29 parts In-Stock

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Fairview Electronics Ltd

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Speed Components Ltd (Excess)

Israel . 2 parts In-Stock

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Overview

Discover the superior quality and reliability of the MT48LC4M32B2P-6:G by Micron Technology, a leading manufacturer in the industry. This high-performance DRAM offers seamless operation in various applications, providing customers with unmatched value and benefits. With its innovative technology and advanced features, this product ensures optimal functionality and efficiency, making it the ideal choice for your memory needs. Trust Micron Technology to deliver excellence with every product they create. Upgrade your system today with the MT48LC4M32B2P-6:G and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components, making it a reliable choice.

Surface Mount: YES

This feature allows for easy installation and saves space on the circuit board.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate this product into various designs and layouts.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures efficient communication with other components in the system.

Self Refresh: YES

The self-refresh function helps to maintain data integrity during power interruptions, increasing reliability.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is a common standard, ensuring compatibility with many systems.

Power Supplies (V): 3.3

Having consistent power at 3.3V helps to maintain stable performance and prevent data loss.

No. of Terminals: 86

The high number of terminals allows for a secure connection and efficient data transfer.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small, thin profile design saves space and allows for versatile installation options.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this product can withstand demanding conditions.

Organization: 4MX32

The 4MX32 organization provides ample storage capacity for data-intensive applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for flexible data transmission, enhancing versatility.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliable performance in various environments.

Technical Specifications

DRAM MT48LC4M32B2P-6:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP86,.46,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

320 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-6:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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