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MT48LC8M16A2P-7E:L

Micron Technology

MT48LC8M16A2P-7E:L by Micron Technology

Micron Technology's MT48LC8M16A2P-7E:L is a 3.3V, 8MX16 Synchronous DRAM with self-refresh feature. Operating at 0-70°C, it offers 5.4ns access time and 134217728-bit memory density. Ideal for commercial applications requiring fast and reliable memory performance.

Median Price

$4.477

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$4.477

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$4.477

-

-

-

Chip Stock

USA . 11,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,100

-

-

-

-

Vyrian

USA . 5,725 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,725

-

-

-

-

Digiode

USA . 2,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,089

-

-

-

-

Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Speed Components Ltd

Israel . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 234 parts In-Stock

1+ parts

$2.107

100+ parts

-

1k+ parts

-

10k+ parts

-

234

$2.107

-

-

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$3.926

100+ parts

$3.573

1k+ parts

$3.219

10k+ parts

-

100

$3.926

$3.573

$3.219

-

Semicontronic

India . 812 parts In-Stock

1+ parts

$4.000

100+ parts

$3.900

1k+ parts

$3.880

10k+ parts

-

812

$4.000

$3.900

$3.880

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$4.387

100+ parts

-

1k+ parts

$4.212

10k+ parts

-

1,000

$4.387

-

$4.212

-

Argo Parts USA

USA . 4,618 parts In-Stock

1+ parts

$4.477

100+ parts

-

1k+ parts

-

10k+ parts

-

4,618

$4.477

-

-

-

Continental Prestige Electronics

USA . 882 parts In-Stock

1+ parts

$4.477

100+ parts

-

1k+ parts

-

10k+ parts

$4.387

882

$4.477

-

-

$4.387

Aztec Data Supply Inc.

USA . 4,185 parts In-Stock

1+ parts

$4.710

100+ parts

-

1k+ parts

-

10k+ parts

-

4,185

$4.710

-

-

-

AZTECH Wire

Italy . 848 parts In-Stock

1+ parts

$5.762

100+ parts

-

1k+ parts

-

10k+ parts

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848

$5.762

-

-

-

Andel Nordic

Denmark . 3,188 parts In-Stock

1+ parts

$9.642

100+ parts

-

1k+ parts

$9.256

10k+ parts

$9.256

3,188

$9.642

-

$9.256

$9.256

Ampacity Inc.

Singapore . 862 parts In-Stock

1+ parts

$29.000

100+ parts

-

1k+ parts

-

10k+ parts

-

862

$29.000

-

-

-

Component Stockers USA

USA . 3,123 parts In-Stock

1+ parts

$47.660

100+ parts

$45.280

1k+ parts

$43.850

10k+ parts

-

3,123

$47.660

$45.280

$43.850

-

Perfect Parts

USA . 5,824 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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5,824

-

-

-

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A-Z Elektronik GmbH

Germany . 5,463 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,463

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-

-

-

Corphita

USA . 2,380 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,380

-

-

-

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Futuretech Components

Singapore . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

Microchip USA

USA . 433 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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433

-

-

-

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iodParts Technologies Inc.

India . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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26

-

-

-

-

Overview

Experience unparalleled speed and reliability with the MT48LC8M16A2P-7E:L by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch quality DRAM products that cater to a wide range of applications. With its synchronous operation and self-refresh capability, this memory module ensures seamless performance in various devices. Offering a compact package style and a wide temperature range, the MT48LC8M16A2P-7E:L provides exceptional value and efficiency for your computing needs. Elevate your experience with Micron Technology's innovative memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable devices.

Surface Mount: YES

With the ability to be surface mounted, this product can be easily integrated into a variety of electronic designs for efficient production.

Package Shape: RECTANGULAR

The rectangular shape of this package allows for efficient use of space on a circuit board, maximizing the overall design layout.

Operating Mode: SYNCHRONOUS

This synchronous operation mode ensures precise and accurate data transfer, making it suitable for high-performance applications.

Self Refresh: YES

The self-refresh feature helps to conserve power and extend battery life in mobile devices, making this product energy-efficient.

Nominal Supply Voltage (Vsup): 3.3V

The 3.3V supply voltage provides stable power to the device, ensuring reliable performance in various operating conditions.

No. of Terminals: 54

With 54 terminals, this product offers a high level of connectivity options, enabling versatile integration into different systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design of this package help to reduce overall system size and weight, perfect for compact devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand heat stress and operate reliably in various environments.

Organization: 8MX16

The organization of 8MX16 provides a balance of capacity and speed, making this product suitable for both storage and processing tasks.

Technical Specifications

DRAM MT48LC8M16A2P-7E:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC8M16A2P-7E:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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