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S70KS1282GABHB033

Infineon Technologies

S70KS1282GABHB033 by Infineon Technologies

Infineon's S70KS1282GABHB033 is a 16MX8 DRAM with 1.8V supply, operating at up to 200MHz clock frequency. Suitable for automotive applications (AEC-Q100), it features synchronous operation, self-refresh capability, and a compact grid array package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 977 parts In-Stock

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977

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Digiode

USA . 879 parts In-Stock

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Nova Conductors

Japan . 47 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 233 parts In-Stock

1+ parts

$2.630

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233

$2.630

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Corohmni

South Africa . 459 parts In-Stock

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$3.659

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459

$3.659

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Modulus Dynamics

Lithuania . 3,041 parts In-Stock

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$4.304

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$4.132

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$3.960

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3,041

$4.304

$4.132

$3.960

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AZTECH Wire

Italy . 641 parts In-Stock

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$13.898

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641

$13.898

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Ampacity Inc.

Singapore . 1,033 parts In-Stock

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$15.000

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1,033

$15.000

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Microchip USA

USA . 9,610 parts In-Stock

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$22.050

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$22.050

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Semicontronic

India . 1,230 parts In-Stock

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$30.000

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$29.250

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$29.100

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1,230

$30.000

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$29.100

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QUARKTWIN TECHNOLOGY LTD

USA . 22,869 parts In-Stock

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Continental Prestige Electronics

USA . 5,839 parts In-Stock

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Bastille Electronics

Australia . 3,163 parts In-Stock

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Argo Parts USA

USA . 1,264 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the S70KS1282GABHB033 by Infineon Technologies. As a leading manufacturer in the industry, Infineon's DRAM offers cutting-edge technology and superior quality. With applications in automotive, industrial, and consumer electronics, this synchronous memory module guarantees seamless operation. Experience lightning-fast data processing and unmatched efficiency with Infineon's innovative product. Upgrade your system today and enjoy the value and benefits that only Infineon can deliver. Trust in Infineon for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and reliability for the product.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Screening Level: AEC-Q100

Compliance with AEC-Q100 ensures high reliability and quality for automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation enables precise control and synchronization of data processing.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient operation at 1.8V reduces power consumption and heat generation.

Maximum Operating Temperature: 105 °C

Capable of operating in high temperature environments without performance degradation.

Memory IC Type: HYPERRAM

HYPERRAM technology offers high-speed data transfer and low latency, ideal for memory-intensive applications.

Technical Specifications

DRAM S70KS1282GABHB033 attributes and parameters. Explore more DRAM devices from Infineon Technologies

Specs

Maximum Access Time:

35 ns

Additional Features:

SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Standby Current:

.0005 Amp

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

S70KS1282GABHB033 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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