Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
Micron Technology's MT53D1024M32D4DT-053WT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 1869.1 MHz clock frequency. It features dual bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.
Median Price
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Flip Electronics
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Cyclops Electronics Ltd
Digiode
Sensible Micro Corp
Vyrian
Netsource Technology, Inc.
Nova Conductors
Aztec Data Supply Inc.
$4.850
Corohmni
$5.250
AZTECH Wire
$6.799
Ampacity Inc.
$29.000
Continental Prestige Electronics
Argo Parts USA
Corphita
Futuretech Components
A-Z Elektronik GmbH
Kepictronics
Microchip USA
Bastille Electronics
Akira Global LLC
Plastic/epoxy body material provides durability and resistance to external elements, making the product suitable for various environments.
Synchronous operation allows for coordinated data transfers within the DRAM, enhancing overall performance and efficiency.
Operating at a low nominal supply voltage of 1.8V helps in reducing power consumption and improving energy efficiency.
Grid array package style with a very thin profile and fine pitch design enables compact and efficient placement of the DRAM on a circuit board.
High maximum clock frequency allows for fast data processing and transfer speeds, making the DRAM suitable for high-performance applications.
Utilizing LPDDR4 DRAM technology ensures high-speed data processing capabilities and efficient power management for enhanced performance.
DRAM MT53D1024M32D4DT-053WT:D attributes and parameters. Explore more DRAM devices from Micron Technology
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MT53D1024M32D4DT-053WT:D Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Obsolescence/ EOL - MT53 28-June-2022
PCN Assembly/Origin - LPDDR4 20-Jul-2022
PCN Packaging - Memory 24-May-2022 Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BAV99
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ROHM
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
LM317T
Bay Linear
Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
BAV99W-7-F
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
1N4148WS
Fairchild Semiconductor
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS123-7-F
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Zetex Plc
Transys Electronics
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
ULN2803ADW
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
MT48LC16M16A2B4-7E:GTR
Micron Technology
Micron Technology's MT48LC16M16A2B4-7E:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features self-refresh mode, very thin profile package style, and supports four bank page burst access mode. Ideal for commercial applications requiring fast data processing in a compact form factor.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
W631GU6NB09I
Winbond Electronics
Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
LH64256BK-70
Sharp Corporation
LH64256BK-70 by Sharp Corp is a 256Kx4 DRAM with 512 refresh cycles, operating at 70ns access time. It features a CMOS technology, 3-STATE output characteristics, and operates in FAST PAGE mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.
KM48V2104BK-6
Samsung
Samsung's KM48V2104BK-6 is a 2MX8 EDO DRAM with 3.3V supply, operating in FAST PAGE mode with 60ns access time. It features 28 terminals in a small outline package suitable for commercial temperature applications. With a memory density of 16Mbit and 2048 refresh cycles, it offers high-speed data storage solutions.
MT48LC8M16A2TG-7EIT:G
Micron Technology's MT48LC8M16A2TG-7EIT:G is a 3.3V, 8MX16 Synchronous DRAM with 143 MHz clock frequency and -40 to 85°C operating range. It features 4-bank page burst access mode, ideal for industrial applications requiring high-speed memory performance.
MT48LC16M16A2P-6A
MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.
MT47H64M16HR-3AIT:H
Micron Technology's MT47H64M16HR-3AIT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. With AEC-Q100 screening level, it offers reliable performance in automotive electronics.
MT48LC8M16A2P-6AIT:L
Micron Technology's MT48LC8M16A2P-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features self-refresh capability, common I/O type, and supports four-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times.
MT40A1G8SA-062EAUT:E
Micron Technology's MT40A1G8SA-062EAUT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously, supports self-refresh, and has a max temperature of 125°C. Ideal for applications requiring high-speed memory in automotive or industrial environments.
MT40A1G8WE-075EAIT:BTR
Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
MT53D512M16D1DS-046WT:D
LPDDR4 DRAM;
MT48LC2M32B2P-6AAIT:J
Micron Technology's MT48LC2M32B2P-6AAIT:J is a 3.3V, 2MX32 Synchronous DRAM with 67108864-bit memory density. Operating at -40 to 85 °C, it features a fast access time of 5.4 ns and is ideal for industrial applications requiring high-speed data processing.
MT40A1G8SA-062E:R
Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
K4D26323RA-GC2A
Samsung's K4D26323RA-GC2A is a DDR1 DRAM with 4MX32 organization, operating at 350 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MTA8ATF1G64HZ-3G2J1
Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.
KMM366S403CTL-G0
Samsung's KMM366S403CTL-G0 is a 4MX64 Synchronous DRAM module with 3.3V supply, operating at 100MHz clock frequency. It features self-refresh capability and offers a memory density of 268MB for applications requiring high-speed data processing in commercial temperature environments.
MT40A512M16JY-075E:BTR
Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT18HTF12872AZ-80EG1
Micron Technology's MT18HTF12872AZ-80EG1 is a 240-terminal DRAM with 128MX72 organization, operating at 400 MHz. It has a memory density of 9663676416 bits and supports a max clock frequency of 400 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.
AS4C8M16SA-6TINTR
Alliance Memory
Alliance Memory's AS4C8M16SA-6TINTR is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at -40 to 85 °C. Ideal for industrial applications, it features common I/O type, self-refresh mode, and small outline package style.
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MT53D512M32D2DS-053WT:D
Micron Technology's MT53D512M32D2DS-053WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a clock frequency of 1869.1 MHz, single bank page burst access mode, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT53E512M32D1ZW-046WT:B
Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT53E128M32D2DS-053AUT:A
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT53D512M32D2DS-053AIT:D
Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
MT53E512M32D1ZW-046AIT:B
Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.
MT53D1024M32D4DT-046WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Width: 10 mm;
MT53E1G32D2FW-046AIT:B
Micron Technology's MT53E1G32D2FW-046AIT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features self-refresh capability and common I/O type, suitable for applications requiring high-speed synchronous memory with a thin profile and fine pitch package style.
MT53E512M32D1ZW-046AAT:B
Micron Technology's MT53E512M32D1ZW-046AAT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT53E512M32D1ZW-046IT:B
Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT53E1536M32D4DT-046WT:A
MT53D512M32D2DS-046AIT:D
Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
MT53E1G32D2FW-046IT:B
Micron Technology's MT53E1G32D2FW-046IT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.
MT53E256M32D2DS-046AIT:B
Micron Technology's MT53E256M32D2DS-046AIT:B is a 256MX32 LPDDR4 DRAM with a max clock frequency of 2133 MHz. It operates in synchronous mode, has a self-refresh feature, and is commonly used in automotive applications due to its AEC-Q100 screening level.
MT53D1024M32D4DT-046AAT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm; Access Mode: MULTI BANK PAGE BURST;
MT53D512M32D2DS-053AUT:D
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Functions: 1; Memory Density: 17179869184 bit; Memory Width: 32; Organization: 512MX32;
MT53E256M32D2DS-053WT:B
MT53E256M32D2DS-046IT:B
Micron Technology's MT53E256M32D2DS-046IT:B is a 256MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates in an industrial temperature range and has a very thin profile package style. This memory module is commonly used in applications that require high-speed data processing and reliable performance.
MT53E256M32D2DS-053AUT:B
Micron Technology's MT53E256M32D2DS-053AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT53E512M32D1ZW-046AUT:B
MT53E512M32D1ZW-046AUT:B by Micron Technology is a 512MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates synchronously, has a common input/output type, and is suitable for applications requiring high memory density and low power consumption.
MT53D1024M32D4DT-046AIT:D
Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
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