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K4B1G1646G-BCMA

Samsung

K4B1G1646G-BCMA by Samsung

Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.

Median Price

$15.000

Lifecycle Status

Suppliers In-Stock

7

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Bristol Electronics

USA . 162 parts In-Stock

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$15.000

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$8.625

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Vyrian

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Prism Electronics

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Nova Conductors

Japan . 64 parts In-Stock

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PC Components Company LLC

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Aztec Data Supply Inc.

USA . 340 parts In-Stock

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$2.450

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Corohmni

South Africa . 164 parts In-Stock

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$5.588

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AZTECH Wire

Italy . 276 parts In-Stock

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$16.353

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Ampacity Inc.

Singapore . 1,451 parts In-Stock

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Authorized Procurement Solutions

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Alle Elektronik GmbH

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Kepictronics

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Continental Prestige Electronics

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Epart123

USA . 3,210 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Bastille Electronics

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Argo Parts USA

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Overview

Experience unparalleled performance and reliability with the Samsung K4B1G1646G-BCMA DDR3 DRAM module. As a leader in memory technology, Samsung delivers high-quality products that are perfect for various applications, from gaming to data processing. With a nominal supply voltage of 1.5V and a maximum clock frequency of 933 MHz, this memory module offers exceptional speed and efficiency. Trust Samsung to enhance your system's performance and enjoy seamless multitasking, faster data access, and overall improved user experience. Elevate your computing experience with Samsung's cutting-edge memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, ideal for use in various electronic devices.

Surface Mount: YES

This surface mount technology allows for easy and efficient installation of the DRAM, making it suitable for high volume production applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, saving space in electronic devices while still offering high memory capacity.

Nominal Supply Voltage / Vsup (V): 1.5

The low nominal supply voltage of 1.5V contributes to energy efficiency and longer battery life in devices utilizing this DRAM.

Power Supplies (V): 1.5

The matching power supply of 1.5V ensures stable and reliable performance of the DRAM in various operating conditions.

No. of Terminals: 96

The high number of terminals allows for seamless connectivity and data transfer between the DRAM and other components, enhancing overall system performance.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array fine pitch package style offers excellent signal integrity and high-speed data transmission capabilities, making it a dependable choice for demanding applications.

Organization: 64MX16

With a 64MX16 organization, this DRAM provides a large memory capacity and efficient data processing capabilities for advanced applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics enable the DRAM to efficiently control data output, reducing signal interference and enhancing system reliability.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures strong and reliable solder connections, increasing the longevity of the DRAM in various operating environments.

Technical Specifications

DRAM K4B1G1646G-BCMA attributes and parameters. Explore more DRAM devices from Samsung

Specs

Maximum Access Time:

.195 ns

Maximum Clock Frequency (fCLK):

933 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e3

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

96

No. of Words:

67108864 words

No. of Words Code:

64M

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.5

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

4,8

Maximum Standby Current:

.01 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

195 mA

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

MATTE TIN

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Trade Compliance

K4B1G1646G-BCMA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

Manufacturer Highlights

Samsung

Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.

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