Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Samsung's K4B1G1646G-BCNB is a 64MX16 DDR3 DRAM with 1073741824 bit memory density. It operates at a max clock frequency of 1066 MHz and has a peak reflow temperature of 260°C. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
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Provides durability and protection for the internal components, ensuring a long lifespan for the product.
Efficient power consumption at 1.5V, reducing energy usage and heat generation.
High number of terminals allow for efficient connectivity and data transfer within the device.
CMOS technology provides high performance with low power consumption, making it an efficient choice for memory.
DDR3 technology offers improved data transfer rates and efficiency compared to older memory types.
DRAM K4B1G1646G-BCNB attributes and parameters. Explore more DRAM devices from Samsung
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K4B1G1646G-BCNB Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.32
SB
8542.32.00.15
Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
BAV99
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
261
Mercury Systems
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
1N4148
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
2N2222A
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
National Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Electronic Devices
Central Semiconductor
2N7002
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
Comchip Technology
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
NUP2105LT1G
Onsemi
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
Fairchild Semiconductor
NC7WZ07P6X
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
KSZ9031RNXIA
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
STM32H753ZIT6
STMicroelectronics
STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.
IS42S16800F-7BLI-TR
Integrated Silicon Solution
IS42S16800F-7BLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for industrial applications requiring fast access time and low standby current consumption.
MT41K512M16VRN-107AIT:P
Micron Technology
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
K4J10324QD-HJ1A
Samsung
Samsung's K4J10324QD-HJ1A DDR3 DRAM features 32MX32 organization, 1000 MHz clock frequency, and 32M word code. Ideal for high-performance applications requiring fast data processing and storage with a max supply current of 1000 mA.
MT41K512M16HA-125AIT:ATR
Micron Technology's MT41K512M16HA-125AIT:ATR is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in harsh environments.
MT47H64M16HR-3IT:E
Micron Technology's MT47H64M16HR-3IT:E is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast access times.
M378T2863RZS-CE6
Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
NT5CC256M16ER-EKA
Nanya Technology
NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
W631GG6NB-09
Winbond Electronics
Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.
M471B2873FHS-CH9
Samsung's M471B2873FHS-CH9 DDR DRAM MODULE offers 128MX64 organization, 1.5V nominal voltage, and operates in synchronous mode. Ideal for applications requiring high memory density and fast access times with a temperature range of 0-95°C.
AS4C128M16MD4-062BAN
Alliance Memory
Alliance Memory's AS4C128M16MD4-062BAN is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency, 1.1V supply voltage, and -40 to 105°C operating temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
IS42S16100H-7BL
IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
IS43QR16256B-083RBLI
IS43QR16256B-083RBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT53D1024M32D4DT-053AAT:D
Micron's MT53D1024M32D4DT-053AAT:D is a 1GX32 DDR4 DRAM with 32-bit memory width and 34359738368 bit density. It operates synchronously in grid array package style, suitable for high-performance computing applications.
M378B5673FH0-CH9
Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
KM416S4020AT-G10
Samsung's KM416S4020AT-G10 is a 4MX16 DRAM with 3.3V supply, operating at 100MHz. It features a small outline, thin profile package and offers 67108864 bits memory density. Ideal for applications requiring high-speed data processing in commercial temperature environments.
IS43DR81280B-3DBLI
IS43DR81280B-3DBLI by Integrated Silicon Solution is a 128MX8 DDR2 DRAM with 333 MHz clock frequency, operating at 1.8V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT40A1G8WE-083EAAT:BTR
MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
MT41J64M16JT-15EAAT:G
Micron Technology's MT41J64M16JT-15EAAT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT40A1G8WE-083EAIT:B
Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
IS42S16400J-7TLI-TR
IS42S16400J-7TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a small outline package suitable for industrial applications requiring fast access times and common I/O type.
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K4B1G1646G-BCH9
DDR3 DRAM; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Access Time: .255 ns;
K4B1G1646G-BCMA
Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.
K4B1G0846G-BCH9
DDR3 DRAM; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);
K4B1G1646E-HCF8
DDR3 DRAM; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Standby Current: .01 Amp;
K4B1G0446D-HCF70
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 82; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
K4B1G0446C-ZCG8T
DDR3 DRAM; No. of Terminals: 94; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Qualification: Not Qualified;
K4B1G0446D-HCF8
DDR3 DRAM; No. of Terminals: 82; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;
K4B1G0446D-HCF80
K4B1G0446C-ZCF70
DDR3 DRAM; Temperature Grade: COMMERCIAL EXTENDED; No. of Terminals: 94; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
K4B1G0446C-ZCF80
K4B1G0446C-ZCG90
K4B1G0446D-HCF7
DDR3 DRAM; No. of Terminals: 82; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Qualification: Not Qualified;
K4B1G0446C-ZCG80
K4B1G0446D-HCF7T
CACHE DRAM MODULE; No. of Terminals: 82; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;
K4B1G0446C-ZCF8
DDR3 DRAM; No. of Terminals: 94; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Package Equivalence Code: BGA94,11X19,32;
K4B1G0446C-ZCG9T
DDR3 DRAM; No. of Terminals: 94; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, FINE PITCH;
K4B1G0446C-ZCF8T
DDR3 DRAM; No. of Terminals: 94; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;
K4B1G0446C-ZCH9
DDR3 DRAM; No. of Terminals: 94; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Access Time: .255 ns;
K4B1G0446C-ZCH90
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