Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MT41K512M8DA-107AAT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
Median Price
$8.410
Lifecycle Status
Suppliers In-Stock
9
In-Stock Inventory
1k+
Mouser Electronics
1+ parts
$6.950
100+ parts
$5.970
1k+ parts
$5.340
10k+ parts
-
DigiKey
$6.778
$6.251
$6.033
Newark
$26.530
$23.110
$22.040
Edge Electronics
Digiode
$7.866
Nova Conductors
$8.387
NexGen Digital
NAC Semi
$6.190
Vyrian
Corohmni
$2.342
Aztec Data Supply Inc.
$2.580
Corphita
$7.452
Continental Prestige Electronics
$8.219
Ampacity Inc.
$15.320
A-Z Elektronik GmbH
Argo Parts USA
Computer Components Inc. - USA
Perfect Parts
Formix International (Excess)
The plastic/epoxy material used for the package body is lightweight and durable, making the product easy to handle and resistant to damage.
The surface mount capability allows for easy and quick installation of the product on circuit boards, saving time and effort during manufacturing.
The synchronous operation ensures that data is transferred at a consistent and efficient rate, improving overall performance of the product.
The low nominal supply voltage of 1.35V helps in reducing power consumption, making the product more energy-efficient.
With a high maximum clock frequency, this product can handle data processing at a fast pace, suitable for applications that require high-speed performance.
The DDR3L DRAM technology used in this product offers improved data transfer rates and energy efficiency, making it a reliable choice for memory-intensive applications.
DRAM MT41K512M8DA-107AAT:P attributes and parameters. Explore more DRAM devices from Micron Technology
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MT41K512M8DA-107AAT:P Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Packaging - Memory 24-May-2022 Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
1N4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADW
Texas Instruments
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
BAV99
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS3203F
Idec
ROTARY SWITCH;
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
MC7805CTG
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Fairchild Semiconductor
SMBJ18CA
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
Unitrode
MT53D512M16D1DS-046AIT:D
Micron Technology
Micron Technology's MT53D512M16D1DS-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
K4A4G165WF-BCTD
Samsung's K4A4G165WF-BCTD is a 256MX16 DDR4 DRAM with 4294967296-bit memory density. Operating at 1.2V, it has a memory width of 16 and supports CMOS technology. Ideal for applications requiring high-speed data processing in devices like computers and servers due to its efficient organization and max operating temperature of 85°C.
AS4C8M16SA-7TCNTR
Alliance Memory
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT48LC8M16A2P-6AAIT:L
Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.
W631GG6NB09I
Winbond Electronics
Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
MT41K256M16HA-125IT
Micron Technology's MT41K256M16HA-125IT is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
AS4C16M16SA-6TCN
AS4C16M16SA-6TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 16777216 words memory density and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT53E512M32D1ZW-046AIT:B
Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.
MT46V16M16P-5BIT:MTR
Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.
KMM366S403CTL-G0
Samsung's KMM366S403CTL-G0 is a 4MX64 Synchronous DRAM module with 3.3V supply, operating at 100MHz clock frequency. It features self-refresh capability and offers a memory density of 268MB for applications requiring high-speed data processing in commercial temperature environments.
AS4C32M16SB-7TIN
Alliance Memory's AS4C32M16SB-7TIN is a 32MX16 SDRAM with 3.3V supply, operating from -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in compact form factors.
MT40A256M16GE-083E:B
Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
MT41K256M16TW-107XIT:P
Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.
MT48LC4M32B2P-7:GTR
Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.
IS42S16320F-7TLI
Integrated Silicon Solution
IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.
MT46V32M16P-6T:F
Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT48LC2M32B2P-6:G
Micron Technology's MT48LC2M32B2P-6:G is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for commercial applications requiring fast access time of 5.5 ns and common I/O type. The small outline package with 0.5 mm terminal pitch makes it ideal for space-constrained designs.
AS4C32M16SB-6TINTR
SYNCHRONOUS DRAM; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
EDB4432BBBJ-1DAUT-F-R
Micron Technology's EDB4432BBBJ-1DAUT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for automotive applications due to its very thin profile, fine pitch grid array package style.
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MT41K256M16TW-107AIT:P
Micron Technology's MT41K256M16TW-107AIT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a low supply voltage of 1.35V and is suitable for industrial applications requiring high memory density and fast data access speeds. The package style is grid array, thin profile, fine pitch with common I/O type and self-refresh capability.
MT41K256M16TW-107IT:P
Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
MT41K256M16TW-107:P/TR
Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT41K256M16TW-107:P
Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT41K256M16TW-107IT:PTR
MT41K256M16TW-107IT:PTR by Micron Technology is a 256MX16 DDR3L DRAM with a memory density of 4Gb. It operates at a nominal voltage of 1.35V and has an access time of 20ns. This memory module is suitable for applications requiring high-speed synchronous operation and low power consumption.
MT41K256M16TW-107AAT:P
Micron Technology's MT41K256M16TW-107AAT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With self-refresh capability and AEC-Q100 screening level, it offers reliable performance in harsh environments.
MT41K128M16JT-125IT:KTR
Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT41K128M16JT-125IT:K
MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT41K256M16TW-107AAT:PTR
MT41K256M16TW-107AAT:PTR by Micron Technology is a DDR3L DRAM with 256MX16 organization, operating at a max clock frequency of 934.57 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
MT41K128M16JT-125AIT:KTR
Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.
MT41K128M16JT-125XIT:K
Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.
MT41K128M16JT-125:K
MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125AIT:K
Micron Technology's MT41K128M16JT-125AIT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125XIT:KTR
Micron Technology's MT41K128M16JT-125XIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
MT41K128M16JT-125:KTR
Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.
MT41K256M16TW-107AUT:P
DDR3L DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT41K256M16HA-125IT:E
Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K256M16HA-125IT:ETR
Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K128M16JT-107:K
Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.
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