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MT48LC16M16A2B4-7E:GTR

Micron Technology

MT48LC16M16A2B4-7E:GTR by Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features self-refresh mode, very thin profile package style, and supports four bank page burst access mode. Ideal for commercial applications requiring fast data processing in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,859 parts In-Stock

1+ parts

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3,859

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Digiode

USA . 598 parts In-Stock

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598

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 841 parts In-Stock

1+ parts

$3.958

100+ parts

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841

$3.958

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Corohmni

South Africa . 531 parts In-Stock

1+ parts

$4.694

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531

$4.694

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AZTECH Wire

Italy . 698 parts In-Stock

1+ parts

$10.043

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698

$10.043

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Argo Parts USA

USA . 5,104 parts In-Stock

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5,104

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Microchip USA

USA . 4,127 parts In-Stock

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4,127

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Continental Prestige Electronics

USA . 3,680 parts In-Stock

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3,680

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Corphita

USA . 241 parts In-Stock

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241

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unleash the power of cutting-edge technology with Micron Technology's MT48LC16M16A2B4-7E:GTR. As a leader in the industry, Micron ensures top-notch quality and reliability in every product. This DRAM module is perfect for a wide range of applications, offering seamless performance and efficiency. With its innovative design and top-notch features, this product delivers unparalleled value and benefits to customers. Experience the advantages of superior technology with Micron Technology's MT48LC16M16A2B4-7E:GTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability for the product.

Surface Mount: YES

Being surface mountable makes this product easy to install and suitable for compact designs.

Package Shape: SQUARE

The square package shape allows for efficient use of space on PCBs.

Operating Mode: SYNCHRONOUS

The synchronous operating mode offers fast and reliable data transfer.

Self Refresh: YES

Self-refresh capability ensures data integrity and reliability during power fluctuations.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V provides efficient power consumption.

No. of Terminals: 54

The ample number of terminals allows for easy connectivity and integration.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style offer high density and space-saving benefits.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand harsh environments.

Organization: 16MX16

The 16MX16 organization offers high memory capacity and efficient data storage.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable operation in varying conditions.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy installation and maintenance.

Maximum Seated Height: 1 mm

With a maximum seated height of 1mm, this product is suitable for slim and compact designs.

Width: 8 mm

The 8mm width allows for efficient usage of space on the PCB.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V ensures compatibility with a wide range of applications.

Length: 8 mm

The 8mm length contributes to the overall compactness of the product design.

Temperature Grade: COMMERCIAL

Designed for commercial applications, this product meets industry standards for performance and reliability.

Access Mode: FOUR BANK PAGE BURST

The four bank page burst access mode offers fast and efficient access to memory contents.

Technology: CMOS

CMOS technology provides low power consumption and high-speed performance.

Terminal Form: BALL

The ball terminal form facilitates easy soldering and secure connections.

No. of Words: 16777216 words

With a high number of words, this product offers ample memory capacity for data storage.

Memory Width: 16

A memory width of 16 bits provides efficient data transfer and processing capabilities.

Terminal Pitch: 0.8 mm

The 0.8mm terminal pitch allows for high-density packaging and space-saving benefits.

No. of Words Code: 16M

The 16M words code indicates a high memory capacity and efficient data storage capability.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V ensures compatibility with a variety of power sources.

Memory Density: 268435456 bit

With a high memory density, this product offers ample storage capacity for data.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous DRAM memory IC type offers high-speed data transfer and reliable performance.

Maximum Access Time: 5.4 ns

With a maximum access time of 5.4ns, this product ensures fast and efficient data retrieval.

Technical Specifications

DRAM MT48LC16M16A2B4-7E:GTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

S-PBGA-B54

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

MT48LC16M16A2B4-7E:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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