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IS43TR16512BL-125KBLI-TR

Integrated Silicon Solution

IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution

IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.

Median Price

$19.480

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

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$19.480

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$17.430

10k+ parts

$16.410

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$19.480

$17.430

$16.410

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Component Sense

UK . 29,950 parts In-Stock

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Chip Stock

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Vyrian

USA . 6,362 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,228 parts In-Stock

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$4.819

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$4.819

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Corohmni

South Africa . 76 parts In-Stock

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$5.003

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AZTECH Wire

Italy . 660 parts In-Stock

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$12.460

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Continental Prestige Electronics

USA . 5,579 parts In-Stock

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Argo Parts USA

USA . 2,397 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Futuretech Components

Singapore . 1,000 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 1,000 parts In-Stock

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Overview

Looking to enhance your electronic devices with top-notch memory solutions? Look no further than the IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution. With a focus on quality and innovation, ISS is a leading manufacturer in the industry. This DDR3L DRAM offers high performance and reliability, making it perfect for a wide range of applications. From industrial-grade equipment to consumer electronics, this memory module delivers outstanding value, benefits, and advantages to customers. Upgrade your devices today with ISS!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and cost-effectiveness.

Surface Mount: YES

Allows for easy and efficient installation on PCBs.

Package Shape: RECTANGULAR

Fits standard PCB layouts for compatibility.

Operating Mode: SYNCHRONOUS

Enhances data processing speed and efficiency.

Self Refresh: YES

Ensures data integrity during power outages or interruptions.

Nominal Supply Voltage / Vsup (V): 1.35

Offers optimal power efficiency for the device.

No. of Terminals: 96

Provides sufficient connectivity options for seamless integration.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Enables high-density mounting and space-saving design.

Maximum Operating Temperature: 95 °C

Ensures reliable performance in various environmental conditions.

Organization: 512MX16

Allows for efficient data storage and retrieval capabilities.

Minimum Standby Voltage: 1.283 V

Allows for low power consumption during standby mode.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme temperature environments.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

Simplifies PCB layout and assembly process.

Maximum Seated Height: 1.2 mm

Enables compatibility with slim device designs.

Maximum Clock Frequency (fCLK): 800 MHz

Offers fast data processing and responsiveness.

Width: 10 mm

Compact form factor for easy integration in tight spaces.

Minimum Supply Voltage (Vsup): 1.283 V

Ensures stable performance under varying voltage conditions.

Maximum Time At Peak Reflow Temperature (s): 10

Supports efficient manufacturing processes.

Peak Reflow Temperature °C: 260

Soldering temperature tolerance for reliable connections.

Length: 14 mm

Provides a balance between size and performance.

Temperature Grade: INDUSTRIAL

Suitable for rugged industrial applications.

Access Mode: MULTI BANK PAGE BURST

Enhances data access speed and efficiency.

Technology: CMOS

Offers low power consumption and high-speed operation.

Terminal Form: BALL

Facilitates secure connections on PCBs.

Maximum Supply Current: 95 mA

Ensures stable power delivery for optimal performance.

No. of Words: 536870912 words

Provides ample storage capacity for data-intensive applications.

Sequential Burst Length: 4,8

Supports efficient data transfer for improved system performance.

Memory Width: 16

Offers high throughput data access capability.

Terminal Pitch: 0.8 mm

Allows for high-density mounting on PCBs.

No. of Words Code: 512M

Indicates memory capacity for easy identification.

Moisture Sensitivity Level (MSL): 3

Ensures reliability in various environmental conditions.

Maximum Supply Voltage (Vsup): 1.45 V

Provides safe voltage tolerance for the device.

Memory Density: 8589934592 bit

Offers high-density memory storage capacity.

Memory IC Type: DDR3L DRAM

Represents the latest and efficient memory technology.

Maximum Standby Current: 0.055 Amp

Ensures low power consumption during idle mode.

Refresh Cycles: 8192

Maintains data integrity and reliability over time.

Interleaved Burst Length: 4,8

Enhances data processing efficiency for multitasking operations.

Technical Specifications

DRAM IS43TR16512BL-125KBLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

800 MHz

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,6X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.055 Amp

Minimum Standby Voltage:

1.283 V

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10 mm

Trade Compliance

IS43TR16512BL-125KBLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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