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IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.

Median Price

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3

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1k+

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Chip Stock

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Corohmni

South Africa . 169 parts In-Stock

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Aztec Data Supply Inc.

USA . 930 parts In-Stock

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AZTECH Wire

Italy . 883 parts In-Stock

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Component Stockers USA

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Argo Parts USA

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Futuretech Components

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Continental Prestige Electronics

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Overview

Looking for high-quality DRAM modules that offer top-notch performance and reliability? Look no further than the IS42S16320D-7BLI-TR by Integrated Silicon Solution. With a focus on cutting-edge technology and innovative design, ISS is a trusted manufacturer in the industry. This DRAM module is perfect for a wide range of applications, providing seamless operation and efficient data processing. Experience the value and benefits of this product, from its common input/output type to its self-refresh capability, setting it apart from the competition. Upgrade your system with the IS42S16320D-7BLI-TR and enjoy the advantages of superior memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers durability and protection for the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy and secure installation of the DRAM onto a circuit board.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination with other components, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage of 3.3V ensures reliable and consistent performance of the DRAM.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency of 143 MHz allows for fast data transfer and processing speeds.

Memory IC Type: CACHE DRAM MODULE

Being a cache DRAM module, it helps improve system performance by providing faster access to frequently used data.

Technical Specifications

DRAM IS42S16320D-7BLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B54

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

IS42S16320D-7BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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