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M393B4G70DM0-YK0

Samsung

M393B4G70DM0-YK0 by Samsung

Samsung M393B4G70DM0-YK0 DDR DRAM MODULE offers 4GX72 organization, 1.35V nominal voltage, and 309237645312 bit memory density. Ideal for servers requiring high-capacity and high-speed memory with synchronous operation and self-refresh capability.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,518 parts In-Stock

1+ parts

$17.000

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1,518

$17.000

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Continental Prestige Electronics

USA . 3,970 parts In-Stock

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3,970

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Argo Parts USA

USA . 909 parts In-Stock

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909

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Overview

Upgrade your system with the Samsung M393B4G70DM0-YK0 DRAM module. Designed by a trusted manufacturer, this rectangular-shaped module operates in synchronous mode and features self-refresh capabilities, ensuring optimal performance. With a nominal supply voltage of 1.35V and a memory density of 309237645312 bits, this DDR DRAM module offers reliability and efficiency for a wide range of applications. Experience faster speeds and improved multitasking with the Samsung M393B4G70DM0-YK0, providing you with the value and benefits you need for your computing needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement and stacking in electronic devices, saving space and improving overall design.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, leading to improved overall performance and reliability.

Self Refresh: YES

Self-refresh capability helps in conserving power and maintaining data integrity during periods of inactivity.

Nominal Supply Voltage / Vsup (V): 1.35

Optimal supply voltage ensures stable and efficient operation of the DRAM module.

No. of Terminals: 240

Higher number of terminals allow for better connectivity and data transfer, enhancing overall performance.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style provides compact and durable packaging for the DRAM module, suitable for various applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures reliability and performance in diverse environmental conditions.

Organization: 4GX72

Efficient organization of 4 groups of 72 bits each facilitates data handling and access, improving overall system efficiency.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature maintains functionality in cold environments, ensuring reliability in varied conditions.

Terminal Position: DUAL

Dual terminal position offers redundancy and better connection stability, enhancing overall reliability of the DRAM module.

Maximum Seated Height: 30.15 mm

Low maximum seated height allows for slim and compact device designs while accommodating the DRAM module effectively.

Width: 4 mm

Narrow width enables easy integration and placement within electronic devices, optimizing space utilization.

Minimum Supply Voltage (Vsup): 1.28 V

Low minimum supply voltage requirement ensures energy efficiency and compatibility with a wide range of power sources.

Length: 133.35 mm

Optimal length provides balanced physical dimensions for effective integration and positioning within electronic systems.

Access Mode: FOUR BANK PAGE BURST

Four bank page burst access mode enhances data retrieval speed and efficiency, improving overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making the DRAM module suitable for energy-efficient applications.

Terminal Form: NO LEAD

No lead terminal form ensures environmental friendliness and compliance with modern regulations, providing a sustainable solution.

No. of Words: 4294967296 words

Large number of words capacity allows for extensive data storage and processing capabilities, suitable for demanding applications.

Memory Width: 72

Wide memory width of 72 bits supports efficient data handling and transfer speeds, improving overall system performance.

Terminal Pitch: 1 mm

Fine terminal pitch of 1 mm enables compact and precise connections, ensuring reliable data transmission and system integrity.

No. of Words Code: 4G

4G words code signifies high capacity and capability of the DRAM module, making it suitable for advanced computing and processing tasks.

Maximum Supply Voltage (Vsup): 1.45 V

Safe maximum supply voltage tolerance protects the DRAM module from overvoltage conditions, ensuring long-term reliability and performance.

Memory Density: 309237645312 bit

High memory density provides ample storage capacity for data-intensive applications, enabling efficient processing and performance.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module offers high-speed data transfer rates and efficiency, making it a versatile and reliable choice for various computing tasks.

Technical Specifications

DRAM M393B4G70DM0-YK0 attributes and parameters. Explore more DRAM devices from Samsung

Specs

Access Mode:

FOUR BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

JESD-30 Code:

R-XDMA-N240

Length:

133.35 mm

Memory Density:

309237645312 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

240

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.28 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4 mm

Trade Compliance

M393B4G70DM0-YK0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Samsung

Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.

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