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IS43TR16256A-125KBLI

Integrated Silicon Solution

IS43TR16256A-125KBLI by Integrated Silicon Solution

IS43TR16256A-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and operates in industrial temperature grade range from -40 to 85 °C. Ideal for applications requiring high memory density and fast access times.

Median Price

$9.656

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

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Nova Conductors

Japan . 22 parts In-Stock

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Vyrian

USA . 8,715 parts In-Stock

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Flip Electronics

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Lantek

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Velocity Electronics

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Resion

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Advanced Electronics

New Zealand . 1,189 parts In-Stock

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$2.593

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$2.463

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Aztec Data Supply Inc.

USA . 3,215 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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AZTECH Wire

Italy . 545 parts In-Stock

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Continental Prestige Electronics

USA . 5,971 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Lixinc

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Argo Parts USA

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S.R.D Solutions

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Alle Elektronik GmbH

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Perfect Parts

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GreenTree Electronics

Israel . 50 parts In-Stock

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iodParts Technologies Inc.

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Overview

Experience the next level of performance and reliability with the IS43TR16256A-125KBLI by Integrated Silicon Solution. As a leader in DRAM technology, ISS delivers top-quality memory solutions for various applications. With its advanced features like synchronous operation and self-refresh capability, this DDR3 DRAM offers seamless performance and efficiency. Whether you're upgrading your computer's memory or enhancing your industrial equipment, this product provides the value and benefits you need for a smooth and fast experience. Trust ISS for cutting-edge technology that takes your devices to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable packaging for the product.

Surface Mount: YES

Allows for easy and secure installation on circuit boards.

Operating Mode: SYNCHRONOUS

Enhances data transfer efficiency by synchronizing clock signals.

Nominal Supply Voltage / Vsup (V): 1.5

Optimal voltage level for stable and reliable operation.

No. of Terminals: 96

Provides multiple connection points for integration with other components.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with high temperature requirements.

Organization: 256MX16

Provides high memory capacity and data bandwidth for efficient performance.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without performance degradation.

Width: 9 mm

Compact size allows for space-efficient layout on circuit boards.

Length: 13 mm

Standard size for easy integration into various electronic devices.

Temperature Grade: INDUSTRIAL

Suitable for use in demanding industrial applications.

Access Mode: MULTI BANK PAGE BURST

Enables fast and efficient access to multiple memory banks simultaneously.

Memory IC Type: DDR3 DRAM

Utilizes DDR3 technology for improved data transfer speeds and efficiency.

Technical Specifications

DRAM IS43TR16256A-125KBLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.1 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.575 V

Minimum Supply Voltage (Vsup):

1.425 V

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

IS43TR16256A-125KBLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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