Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
S70KL1283DPBHV020 by Infineon Technologies is a 16MX8 DRAM with 16777216 words and memory density of 134217728 bits. Operating at a max clock frequency of 166 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact electronic devices.
Median Price
$4.400
Lifecycle Status
Suppliers In-Stock
8
In-Stock Inventory
1k+
DigiKey
1+ parts
$8.320
100+ parts
$7.158
1k+ parts
$6.680
10k+ parts
$6.581
Rochester
-
$3.880
$3.470
$3.260
Flip Electronics (Authorized)
Verical
$3.938
$3.712
Digiode
$3.382
Nova Conductors
$6.765
Flip Electronics
Vyrian
Modulus Dynamics
$2.696
$2.588
$2.480
Ampacity Inc.
$3.030
Corphita
$3.204
Continental Prestige Electronics
$6.630
Argo Parts USA
Authorized Procurement Solutions
PLASTIC/EPOXY material provides good durability and protection for the DRAM, ensuring reliable performance over time.
Surface mount capability makes installation and integration of the DRAM into electronic devices much easier and more efficient.
Synchronous operation allows for precise timing and synchronization, enhancing the overall performance of the DRAM.
Operating at a nominal supply voltage of 3V offers a good balance between power efficiency and performance for the DRAM.
High maximum clock frequency of 166 MHz enables fast data transfer rates and responsiveness for applications using this DRAM.
CMOS technology ensures low power consumption and high reliability for the DRAM, making it suitable for battery-powered devices.
HYPERRAM technology provides high memory density and fast access times, making this DRAM an excellent choice for memory-intensive applications.
DRAM S70KL1283DPBHV020 attributes and parameters. Explore more DRAM devices from Infineon Technologies
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S70KL1283DPBHV020 Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.02
SB
8542.32.00.15
PCN Packaging - Ship Label REV
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
1N4148
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBRS130LT3G
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
SMBJ18CA
Alpha & Omega Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Bytesonic Electronics
Rochester Electronics
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
BSS138DW-7-F
Diodes Incorporated
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
General Instrument
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
Nexperia
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
L7805CV
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
K4A8G165WB-BCRC
Samsung
Samsung's K4A8G165WB-BCRC is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT47H32M16NF-25EAIT:H
Micron Technology
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
MT47H128M8SH-25EIT:M
Micron Technology's MT47H128M8SH-25EIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
IS42S32400F-7BLI
Integrated Silicon Solution
IS42S32400F-7BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low standby current consumption.
AS4C4M16SA-7TCN
Alliance Memory
AS4C4M16SA-7TCN by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 0-70 °C. Featuring self-refresh and four-bank page burst access mode, it offers 67108864-bit memory density for various commercial applications.
IS42S16320D-7TLI-TR
IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.
S27KL0642DPBHB020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Terminal Pitch: 1 mm;
W631GU6NB-12
Winbond Electronics
W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K64M16TW-107AAT:J
Micron Technology's MT41K64M16TW-107AAT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for applications requiring high-speed and low-power memory solutions.
MT4KTF25664HZ-1G9P1
Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.
AS4C256M16D3B-12BIN
Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
MT40A1G16TB-062EIT:F
Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G8WE-083EAUT:B
Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
MT40A4G8NEA-062E:F
MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.
IS43LR16800G-6BLI-TR
IS43LR16800G-6BLI-TR by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with a memory density of 134217728 bits. It operates synchronously at a max temperature of 85°C and has a self-refresh mode. This thin-profile, fine-pitch package is ideal for industrial applications requiring fast access times and low power consumption.
IS43TR16256B-125KBLI
IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.
MT41K512M16VRN-107AIT:P
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
NT5CC128M16JR-EKT
Nanya Technology
NT5CC128M16JR-EKT by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
KM44C1000BT-7
Samsung's KM44C1000BT-7 is a 1MX4 DRAM with 70ns access time, operating at 5V. It features 3-STATE output and fast page access mode, suitable for commercial applications requiring high memory density and low standby current. The package is small outline with dual terminal position, making it ideal for space-constrained designs.
MT46H32M16LFBF-6AIT:C
MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.
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S70KS1282GABHB030
Infineon Technologies
S70KS1282GABHB030 by Infineon Technologies is a 16MX8 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. It is designed for applications requiring high-speed synchronous memory, such as automotive electronics and industrial control systems.
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Maximum Supply Voltage (Vsup): 2 V;
S70KS1282GABHB033
Infineon's S70KS1282GABHB033 is a 16MX8 DRAM with 1.8V supply, operating at up to 200MHz clock frequency. Suitable for automotive applications (AEC-Q100), it features synchronous operation, self-refresh capability, and a compact grid array package style.
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit; Maximum Standby Current: .0005 Amp;
S70KS1282GABHV020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Minimum Operating Temperature: -40 Cel;
Infineon's S70KS1282GABHV020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 105°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its low profile grid array package and common I/O type.
S70KL1282DPBHA020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Screening Level: AEC-Q100;
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Standby Current: .0005 Amp;
S70KS1282GABHB020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 200 MHz; Minimum Supply Voltage (Vsup): 1.7 V;
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Memory Width: 8;
S70KL1282DPBHI020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
Infineon's S70KL1282DPBHI020 is a 16MX8 DRAM with 166 MHz clock frequency, operating at 3.6V. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices due to its very thin profile grid array package style.
S70KS1282GABHI020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA24,5X5,40; Terminal Form: BALL;
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
S70KL1282DPBHA023
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Length: 8 mm; Maximum Supply Voltage (Vsup): 3.6 V;
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Technology: CMOS;
S70KL1282DPBHM020
HYPERRAM;
S70KL1282DPBHB023
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 60 mA; Terminal Form: BALL;
S70KL1282DPBHM023
Supply Digital Components
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