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IS42S16320D-7BLI

Integrated Silicon Solution

IS42S16320D-7BLI by Integrated Silicon Solution

IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.

Median Price

$15.345

Lifecycle Status

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1k+

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Nova Conductors

Japan . 57 parts In-Stock

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$14.182

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Bristol Electronics

USA . 187,500 parts In-Stock

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$14.700

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$13.568

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$12.054

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NAC Semi

USA . 10 parts In-Stock

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$15.990

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10

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Component Electronics Inc.

Canada . 73 parts In-Stock

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$19.230

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$14.420

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$12.500

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Chip Stock

USA . 9,300 parts In-Stock

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Vyrian

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Rebound Electronics

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Corohmni

South Africa . 980 parts In-Stock

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$2.856

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$2.856

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Aztec Data Supply Inc.

USA . 2,390 parts In-Stock

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$3.026

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AZTECH Wire

Italy . 315 parts In-Stock

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$12.475

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Bastille Electronics

Australia . 17 parts In-Stock

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$14.180

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$13.471

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$12.620

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Continental Prestige Electronics

USA . 6,183 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$14.466

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Authorized Procurement Solutions

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GreenTree Electronics

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Argo Parts USA

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Perfect Parts

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Overview

Discover the power of the IS42S16320D-7BLI, brought to you by the renowned manufacturer Integrated Silicon Solution. As a leading player in the industry, Integrated Silicon Solution has consistently delivered top-quality products, and the IS42S16320D-7BLI is no exception. This high-performance DRAM offers unparalleled speed and reliability, making it the perfect solution for a wide range of applications. Whether you need it for data storage, networking, or computing, this product will exceed your expectations. With its innovative design and advanced features, the IS42S16320D-7BLI provides exceptional value and benefits to customers. Experience the difference today and unlock new possibilities with this cutting-edge memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made of a durable and lightweight plastic/epoxy material, making it resistant to physical damage and ideal for portable devices.

Surface Mount: YES

With surface mount capability, this product can be easily mounted on circuit boards, saving space and simplifying the manufacturing process.

No. of Functions: 1

Featuring a single function, this product is designed for specific tasks, ensuring efficient and focused performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into various electronic systems, offering compatibility and flexibility in design.

Operating Mode: SYNCHRONOUS

Operating in synchronous mode ensures precise timing and synchronized data transfers, maximizing efficiency and reducing errors.

Self Refresh: YES

With self-refresh capability, this product can automatically refresh its memory cells without external intervention, enhancing reliability and reducing power consumption.

Input/Output Type: COMMON

The common input/output type simplifies the interface with other components, enabling seamless communication and compatibility.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V, this product offers stable and consistent performance within the specified range, ensuring reliability.

Power Supplies (V): 3.3

Powered by a 3.3V power supply, this product can be easily integrated into existing systems without the need for additional voltage converters.

No. of Terminals: 54

With 54 terminals, this product provides a sufficient number of connection points, allowing for easy integration and flexibility in circuit design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style ensures high-density packaging, enabling compact designs and efficient use of space.

Maximum Operating Temperature: 85 °C

This product can operate at a maximum temperature of 85°C, making it suitable for various industrial applications with demanding temperature requirements.

Organization: 32MX16

With an organization of 32 million words by 16 bits, this product offers a large memory capacity, enabling storage of extensive data and efficient data processing.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow this product to be in three states: HIGH, LOW, or high impedance, providing flexibility and compatibility in various system configurations.

Minimum Operating Temperature: -40 °C

Capable of operating in temperatures as low as -40°C, this product is suitable for use in harsh environments and extreme weather conditions.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish ensures reliable and corrosion-resistant connections, enhancing the longevity and performance of the product.

Terminal Position: BOTTOM

With terminals located at the bottom, this product offers ease of assembly and compatibility with standard manufacturing processes.

No. of Ports: 1

Featuring a single port, this product provides a simple and straightforward interface, reducing complexity and enhancing ease of use.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this product offers a low-profile design, enabling it to be used in space-constrained applications.

Maximum Clock Frequency (fCLK): 143 MHz

Capable of operating at a maximum clock frequency of 143 MHz, this product delivers high-speed data processing and improved performance.

Width: 8 mm

With a width of 8mm, this product offers a compact form factor, allowing for efficient use of space in electronic systems.

Minimum Supply Voltage (Vsup): 3 V

Operating with a minimum supply voltage of 3V, this product ensures reliability and stability under low voltage conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The product can withstand a maximum time of 30 seconds at the peak reflow temperature, ensuring its robustness during the manufacturing process.

Peak Reflow Temperature °C: 260

Designed to withstand peak reflow temperatures up to 260°C, this product is suitable for high-temperature manufacturing processes.

Length: 13 mm

With a length of 13mm, this product offers a compact size, allowing for flexible integration in various electronic devices.

Temperature Grade: INDUSTRIAL

Featuring an industrial temperature grade, this product is designed to withstand harsh operating conditions and deliver reliable performance in demanding environments.

Access Mode: FOUR BANK PAGE BURST

The four bank page burst access mode enhances data access speed and efficiency, making this product suitable for high-performance applications.

Technology: CMOS

Built using CMOS technology, this product offers low power consumption, high noise resistance, and compatibility with various electronic systems.

Terminal Form: BALL

With ball terminal form, this product ensures secure and reliable connections, enhancing overall system integrity.

Maximum Supply Current: 220 mA

The product operates with a maximum supply current of 220mA, ensuring efficient power usage and compatibility with power supply specifications.

No. of Words: 33554432 words

Featuring a large number of words, this product provides extensive memory capacity, accommodating vast amounts of data for complex applications.

Sequential Burst Length: 1,2,4,8,FP

Supporting sequential burst lengths of 1, 2, 4, 8, and full page, this product offers flexibility in data transfer modes, enhancing versatility and compatibility.

Memory Width: 16

With a memory width of 16 bits, this product enables efficient data storage and retrieval, providing improved performance in various applications.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8mm ensures closely spaced and secure connections, allowing for high packing density and improved signal integrity.

No. of Words Code: 32M

With a 32M words code, this product provides a wide memory address range, enhancing versatility and accommodates extensive data storage.

Moisture Sensitivity Level (MSL): 3

Featuring a moisture sensitivity level of 3, this product is designed to withstand moderate moisture exposure, ensuring reliability during storage and assembly.

Maximum Supply Voltage (Vsup): 3.6 V

Designed to operate within a maximum supply voltage of 3.6V, this product offers flexibility and compatibility with various power supply specifications.

Memory Density: 536870912 bit

With a high memory density of 536,870,912 bits, this product provides ample storage capacity for large data sets, enabling efficient data processing and storage.

Memory IC Type: SYNCHRONOUS DRAM

This product belongs to the synchronous DRAM category, which ensures fast and synchronized data access, making it suitable for high-performance applications.

Maximum Standby Current: 0.004 Amp

With a maximum standby current of 0.004 Amp, this product minimizes power consumption during idle periods, contributing to energy efficiency and longer battery life.

Refresh Cycles: 8192

The product supports 8192 refresh cycles, ensuring data integrity and preventing data loss or corruption during extended use.

Interleaved Burst Length: 1,2,4,8

Supporting interleaved burst lengths of 1, 2, 4, and 8, this product enables efficient data transfers and provides flexibility in accessing memory banks.

Maximum Access Time: 5.4 ns

With a maximum access time of 5.4 nanoseconds, this product offers fast data retrieval, enhancing overall system performance and responsiveness.

Technical Specifications

DRAM IS42S16320D-7BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B54

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

IS42S16320D-7BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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