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AS4C256M16D3B-12BIN

Alliance Memory

AS4C256M16D3B-12BIN by Alliance Memory

Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,758 parts In-Stock

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VNN

France . 5,389 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Aztec Data Supply Inc.

USA . 65 parts In-Stock

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$5.441

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65

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AZTECH Wire

Italy . 854 parts In-Stock

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$14.521

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854

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Continental Prestige Electronics

USA . 3,298 parts In-Stock

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Argo Parts USA

USA . 1,629 parts In-Stock

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Perfect Parts

USA . 202 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Upgrade your systems with the AS4C256M16D3B-12BIN from Alliance Memory, a leading manufacturer in the DRAM category. This high-quality memory module offers synchronous operation and self-refresh capabilities, ensuring optimal performance in a variety of applications. With a nominal supply voltage of 1.5V and a compact package style, this memory device delivers both efficiency and reliability. Trust Alliance Memory to provide top-notch components for your electronic devices. Elevate your products with the AS4C256M16D3B-12BIN and experience seamless performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product durable and lightweight, ideal for use in various electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operation allows for precise and coordinated data transfer, ensuring high performance and reliability in data processing.

Nominal Supply Voltage / Vsup (V): 1.5

The 1.5V supply voltage ensures efficient power consumption and compatibility with standard voltage requirements in electronic systems.

No. of Terminals: 96

With 96 terminals, the product offers enhanced connectivity and compatibility with various circuit configurations, allowing for flexibility in design and integration.

Memory IC Type: DDR3 DRAM

Being a DDR3 DRAM memory IC type, this product delivers high-speed data transfer rates and reliability, making it suitable for demanding computing applications.

Technical Specifications

DRAM AS4C256M16D3B-12BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.575 V

Minimum Supply Voltage (Vsup):

1.425 V

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Trade Compliance

AS4C256M16D3B-12BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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