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MT46V16M16P-5B:M

Micron Technology

MT46V16M16P-5B:M by Micron Technology

Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

Median Price

$5.765

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Mobius Materials

USA . 500 parts In-Stock

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$4.020

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$3.220

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Nova Conductors

Japan . 66 parts In-Stock

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$7.510

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Chip Stock

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Cyclops Electronics Ltd

UK . 8,000 parts In-Stock

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Vyrian

USA . 3,157 parts In-Stock

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Digiode

USA . 2,076 parts In-Stock

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Classic Components Corporation

USA . 936 parts In-Stock

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Sensible Micro Corp

USA . 262 parts In-Stock

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Netsource Technology, Inc.

USA . 181 parts In-Stock

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Rebound Electronics

UK . 116 parts In-Stock

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Halfin

Belgium . 60 parts In-Stock

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J2 Sourcing AB

Sweden . 45 parts In-Stock

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Dan-Mar Components

USA . 35 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 18 parts In-Stock

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Speed Components Ltd

Israel . 16 parts In-Stock

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Component Sense

UK . 15 parts In-Stock

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Semi Source

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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Semicontronic

India . 3,084 parts In-Stock

1+ parts

$1.000

100+ parts

$0.975

1k+ parts

$0.970

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3,084

$1.000

$0.975

$0.970

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Aztec Data Supply Inc.

USA . 701 parts In-Stock

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$4.665

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$4.665

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Corohmni

South Africa . 205 parts In-Stock

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$5.760

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AZTECH Wire

Italy . 631 parts In-Stock

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$7.161

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Continental Prestige Electronics

USA . 4,462 parts In-Stock

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$7.510

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$7.359

4,462

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$7.359

Netroflash

USA . 50 parts In-Stock

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$7.510

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$7.359

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$7.359

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Perfect Parts

USA . 73,756 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 15,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 10,954 parts In-Stock

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S.R.D Solutions

India . 10,000 parts In-Stock

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RC Electronics

USA . 8,303 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Pacific Micro-Tech

USA . 4,830 parts In-Stock

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Argo Parts USA

USA . 3,633 parts In-Stock

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Corphita

USA . 2,381 parts In-Stock

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Kepictronics

USA . 2,095 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 1,800 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1,800 parts In-Stock

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Assy Fe

Spain . 1,200 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 85 parts In-Stock

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ChipstoGo Electronic ltd

UK . 20 parts In-Stock

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iodParts Technologies Inc.

India . 4 parts In-Stock

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Overview

Looking for top-of-the-line DRAM memory solutions? Look no further than the MT46V16M16P-5B:M by Micron Technology. With a reputation for excellence in memory technology, Micron delivers unparalleled quality and reliability. Ideal for a wide range of applications, this synchronous DRAM offers high performance and efficiency. Boost your system's speed and performance with this innovative memory solution. Upgrade to Micron today and experience the difference in your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-term reliability of the product.

Operating Mode: SYNCHRONOUS

Allows for precise timing and coordination with the system, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 2.6

Optimal voltage supply for efficient and stable operation of the DRAM.

Maximum Clock Frequency (fCLK): 200 MHz

Supports high-speed data processing and transfer rates, ideal for demanding applications.

Memory IC Type: DDR1 DRAM

DDR1 technology provides high bandwidth and low power consumption, making it a cost-effective choice for memory solutions.

Technical Specifications

DRAM MT46V16M16P-5B:M attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8

JESD-30 Code:

R-PDSO-G66

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

66

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP66,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.6

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

175 mA

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

2.6

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT46V16M16P-5B:M Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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