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MTA16ATF2G64HZ-2G6E1

Micron Technology

MTA16ATF2G64HZ-2G6E1 by Micron Technology

Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.

Median Price

$52.267

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13 parts In-Stock

1+ parts

$52.267

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$52.267

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Verical

USA . 13 parts In-Stock

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$52.267

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Mouser Electronics

USA . 57 parts In-Stock

1+ parts

$113.310

100+ parts

$87.500

1k+ parts

$84.820

10k+ parts

$84.650

57

$113.310

$87.500

$84.820

$84.650

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,644 parts In-Stock

1+ parts

$49.654

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1,644

$49.654

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Nova Conductors

Japan . 10 parts In-Stock

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$119.508

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10

$119.508

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Chip Stock

USA . 11,200 parts In-Stock

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Vyrian

USA . 4,171 parts In-Stock

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Netsource Technology, Inc.

USA . 36 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 284 parts In-Stock

1+ parts

$5.189

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284

$5.189

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Ampacity Inc.

Singapore . 28 parts In-Stock

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$44.430

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28

$44.430

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Corphita

USA . 1,082 parts In-Stock

1+ parts

$47.040

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1,082

$47.040

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Continental Prestige Electronics

USA . 27 parts In-Stock

1+ parts

$119.508

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$117.118

27

$119.508

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$117.118

Argo Parts USA

USA . 1,902 parts In-Stock

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1,902

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Perfect Parts

USA . 336 parts In-Stock

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336

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Overview

Elevate your computing experience with the MTA16ATF2G64HZ-2G6E1 by Micron Technology. Designed with precision and expertise, this DDR DRAM MODULE offers unparalleled performance and reliability. Whether you're a gamer looking for seamless gameplay or a professional in need of lightning-fast processing speeds, this memory module is the perfect solution. With its cutting-edge technology and superior craftsmanship, Micron Technology ensures that every customer receives the best value and benefits from their products. Upgrade your system today and experience the difference!

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation in various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable pace, improving overall performance.

Self Refresh: YES

Self-refresh capability allows the DRAM to maintain data integrity even during power interruptions or fluctuations.

Nominal Supply Voltage (Vsup): 1.2 V

Low voltage operation helps in reducing power consumption and heat generation, contributing to energy efficiency.

No. of Terminals: 260

More terminals provide a secure and stable connection, improving reliability and signal transmission.

Maximum Operating Temperature: 95 °C

High temperature threshold ensures reliable performance even in demanding environments or applications.

Organization: 2GX64

2G organization with 64 memory width provides high capacity storage and efficient data processing capabilities.

Width: 3.7 mm

Compact width allows for easy integration in space-constrained devices without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption, high speed processing, and reliability, making it an ideal choice for memory modules.

No. of Words: 2147483648 words

Large number of words available for storage ensures ample space for data storage and processing in a variety of applications.

Memory Width: 64

64-bit memory width allows for efficient data transfer and processing, enhancing overall system performance.

Memory Density: 137438953472 bit

High memory density provides ample storage capacity for handling large volumes of data and applications.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module offers high-speed data transfer rates, low latency, and improved efficiency, making it suitable for demanding computing tasks.

Technical Specifications

DRAM MTA16ATF2G64HZ-2G6E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N260

Length:

69.6 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.13 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Width:

3.7 mm

Trade Compliance

MTA16ATF2G64HZ-2G6E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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