Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's MT40A1G8WE-083E:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like servers and PCs.
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Dynamic Solutions
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Semi Source
PC Components Company LLC
Bristol Electronics
Sensible Micro Corp
Advanced Electronics
$3.903
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AZTECH Wire
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Ampacity Inc.
$20.000
RC Electronics
A-Z Elektronik GmbH
Continental Prestige Electronics
Kepictronics
Aranea Global
Corphita
Argo Parts USA
This material provides durability and protection for the DRAM, ensuring a longer lifespan.
Easy to install and suitable for automated assembly processes, making it convenient for manufacturers.
Synchronous operation ensures precise timing and synchronization, improving overall system performance.
Efficient power usage at a standard voltage, reducing energy consumption and heat generation.
CMOS technology offers low power consumption and high speed, making it a reliable choice for memory modules.
DRAM MT40A1G8WE-083E:B attributes and parameters. Explore more DRAM devices from Micron Technology
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MT40A1G8WE-083E:B Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
BAV99WT1G
Onsemi
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
1N4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Pro-an Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BSS123NH6327XTSA1
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
Shandong Yiguang Electronic Joint Stock
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
1N4148WS-7-F
Diodes Incorporated
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
SS14
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
Semiconductor Technology
Multicomp Pro
Vishay Intertechnology
LL4148
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M393B2G70BH0-YH9
Samsung
Samsung's M393B2G70BH0-YH9 DRAM features 240 terminals, 1.35V supply voltage, and a max clock frequency of 667MHz. Ideal for high-performance computing applications requiring fast memory access and data processing capabilities.
K4J10324QD-HJ1A
Samsung's K4J10324QD-HJ1A DDR3 DRAM features 32MX32 organization, 1000 MHz clock frequency, and 32M word code. Ideal for high-performance applications requiring fast data processing and storage with a max supply current of 1000 mA.
MT41K512M16VRP-107AAT:P
Micron Technology
Micron Technology's MT41K512M16VRP-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
S27KL0642DPBHI020
S27KL0642DPBHI020 by Infineon Technologies is an 8MX8 DRAM with a memory density of 67108864 bit. Operating at up to 200 MHz, it features synchronous mode and self-refresh capability. This HYPERRAM is suitable for applications requiring high-speed data storage in compact electronic devices.
D2516ECMDXGJDI-U
Kingston Technology Company
Kingston's D2516ECMDXGJDI-U is a DDR3L DRAM with 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type for efficient data processing in thin profile grid array packages.
S27KS0642GABHV020
S27KS0642GABHV020 by Infineon Technologies is a 8MX8 DRAM with synchronous operation, self-refresh capability, and 200 MHz clock frequency. It is ideal for applications requiring high-speed memory access in compact devices due to its very thin profile package style and common I/O type.
AS4C512M16D3LB-12BINTR
Alliance Memory
Alliance Memory's AS4C512M16D3LB-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in a compact grid array package.
MT40A256M16LY-062EAIT:F
Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.
K4T1G164QF-BIE6
Samsung's K4T1G164QF-BIE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast data processing and storage with a low standby current of 0.01 Amp.
M374S1723FTS-C7A
Samsung M374S1723FTS-C7A is a 16MX72 Synchronous DRAM Module with 133 MHz fCLK. It operates at 3.3V, has 72 memory width, and supports FOUR BANK PAGE BURST access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.
AS4C8M16SA-7TCNTR
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
M393B1K70DH0-YH9
Samsung M393B1K70DH0-YH9 DDR DRAM Module features 1.35V supply, 667MHz clock frequency, and 72 memory width. Ideal for high-performance computing applications with a max operating temperature of 85°C and self-refresh capability.
MT46V64M4P-5B:K
Micron Technology's MT46V64M4P-5B:K is a DDR1 DRAM with 64MX4 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in commercial temperature environments.
MTA8ATF2G64HZ-3G2F1
DDR4 DRAM MODULE;
MT53D512M32D2DS-053AIT:D
Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
MT41K128M16HA-15E:D
Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT41J128M16JT-125:K
Micron Technology's MT41J128M16JT-125:K is a DDR3 DRAM with 128MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
IS42S16320F-7TLI-TR
Integrated Silicon Solution
IS42S16320F-7TLI-TR by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 536870912-bit memory density. Operating at 3.3V, it features a max access time of 5.4ns and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in compact spaces.
NT5CC256M16ER-EKI
Nanya Technology
NT5CC256M16ER-EKI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
MT48LC4M32B2P-6AXIT:L
Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.
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MT40A512M16LY-062EIT:ETR
Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.
MT40A512M16LY-062EIT:E
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
MT40A512M16LY-062EAIT:E
Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
MT40A256M16GE-083E:B
Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16LY-075:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
MT40A1G16TB-062EIT:F
Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A512M16LY-062EAUT:ETR
MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.
MT40A512M16TB-062E:R
Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT40A1G16KD-062EIT:E
Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT40A1G16TB-062E:F
Micron Technology's MT40A1G16TB-062E:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G16RC-062EIT:BTR
DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;
MT40A1G16KD-062E:E
Micron Technology's MT40A1G16KD-062E:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package, synchronous operation, and self-refresh capability. Ideal for applications requiring high-speed memory performance in compact form factors.
MT40A256M16LY-062EAAT:FTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V; Maximum Seated Height: 1.2 mm;
MT40A256M16LY-062EAAT:F
Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
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