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IS43DR16160A-3DBLI-TR

Integrated Silicon Solution

IS43DR16160A-3DBLI-TR by Integrated Silicon Solution

IS43DR16160A-3DBLI-TR by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. Operating at 1.8V, it offers 16M words and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,708 parts In-Stock

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Nova Conductors

Japan . 31 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,870 parts In-Stock

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$3.792

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Corohmni

South Africa . 239 parts In-Stock

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$4.807

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AZTECH Wire

Italy . 395 parts In-Stock

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$17.628

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Continental Prestige Electronics

USA . 6,852 parts In-Stock

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Argo Parts USA

USA . 4,431 parts In-Stock

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Aranea Global

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Overview

Upgrade your system with the IS43DR16160A-3DBLI-TR from Integrated Silicon Solution, a top-tier manufacturer known for high-quality DRAM products. This DDR2 DRAM offers remarkable performance and reliability, making it ideal for industrial applications where precision and efficiency are crucial. With a 16MX16 organization and a maximum clock frequency of 333 MHz, this memory module delivers seamless operation and optimal speed for your projects. Trust ISS to provide you with cutting-edge technology that exceeds expectations and enhances your overall experience. Elevate your system's performance today with the IS43DR16160A-3DBLI-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and lightweight, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and efficient data processing.

Nominal Supply Voltage: 1.8V

Low nominal supply voltage helps in reducing power consumption and heat generation.

Temperature Grade: INDUSTRIAL

Industrial grade temperature range ensures reliable performance in harsh environments.

Memory IC Type: DDR2 DRAM

DDR2 DRAM technology offers high-speed data transfer and increased bandwidth.

Technical Specifications

DRAM IS43DR16160A-3DBLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.45 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B84

Length:

12.5 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

330 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS43DR16160A-3DBLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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