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MT48LC8M16A2P-75IT:G

Micron Technology

MT48LC8M16A2P-75IT:G by Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact designs.

Median Price

$11.909

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 35 parts In-Stock

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$9.817

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NAC Semi

USA . 39 parts In-Stock

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$14.000

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Chip Stock

USA . 24,600 parts In-Stock

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J2 Sourcing AB

Sweden . 10,830 parts In-Stock

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Vyrian

USA . 8,163 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,533 parts In-Stock

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Digiode

USA . 2,465 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 705 parts In-Stock

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ComSIT Distribution GmbH

Germany . 633 parts In-Stock

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ComSIT USA

USA . 633 parts In-Stock

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Sternenhof Electronics

Switzerland . 510 parts In-Stock

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510

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Freddi Giovanni

Italy . 354 parts In-Stock

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Rebound Electronics

UK . 251 parts In-Stock

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A&K Electronics

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Rotakorn

Sweden . 198 parts In-Stock

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Cyclops Electronics Ltd

UK . 182 parts In-Stock

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NexGen Digital

USA . 30 parts In-Stock

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Executive Electronics, Inc.

USA . 13 parts In-Stock

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Bristol Electronics

USA . 11 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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Semtec, LLC

USA . 1 parts In-Stock

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CirComp Electronics, Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 155 parts In-Stock

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$2.286

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155

$2.286

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Aztec Data Supply Inc.

USA . 1,186 parts In-Stock

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$2.390

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$2.390

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Component Stockers USA

USA . 3,050 parts In-Stock

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$4.540

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$4.310

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$4.170

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$4.540

$4.310

$4.170

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Andel Nordic

Denmark . 12,795 parts In-Stock

1+ parts

$4.952

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$4.754

10k+ parts

$4.754

12,795

$4.952

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$4.754

$4.754

AZTECH Wire

Italy . 762 parts In-Stock

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$5.630

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Aranea Global

USA . 2,000 parts In-Stock

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$9.621

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$9.236

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$9.621

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$9.236

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Continental Prestige Electronics

USA . 1,849 parts In-Stock

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$9.817

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$9.621

1,849

$9.817

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Semicontronic

India . 2,870 parts In-Stock

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$11.000

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$10.725

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$10.670

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$11.000

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Ampacity Inc.

Singapore . 993 parts In-Stock

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$15.000

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A-Z Elektronik GmbH

Germany . 9,668 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Perfect Parts

USA . 2,940 parts In-Stock

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S.R.D Solutions

India . 2,000 parts In-Stock

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Corphita

USA . 943 parts In-Stock

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Argo Parts USA

USA . 928 parts In-Stock

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Futuretech Components

Singapore . 784 parts In-Stock

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Formix International (Excess)

India . 706 parts In-Stock

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iodParts Technologies Inc.

India . 602 parts In-Stock

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Microchip USA

USA . 401 parts In-Stock

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Kepictronics

USA . 194 parts In-Stock

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Assy Fe

Spain . 37 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 10 parts In-Stock

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Overview

Elevate your electronic devices with the high-quality MT48LC8M16A2P-75IT:G DRAM from Micron Technology. This cutting-edge component offers unparalleled performance and reliability, making it a top choice for a wide range of applications. With its innovative design and advanced features, this memory module ensures seamless operation and enhanced efficiency. Trust Micron Technology to deliver a superior product that brings exceptional value and benefits to your projects. Experience the difference with the MT48LC8M16A2P-75IT:G and take your technology to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and effort during production.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the DRAM and other components in the system, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V provides a balance between power consumption and performance, making it an efficient choice for various applications.

Maximum Clock Frequency (fCLK): 133 MHz

The high clock frequency allows for fast data transfer and processing, enhancing the speed and efficiency of the DRAM.

Memory IC Type: SYNCHRONOUS DRAM

This type of DRAM offers synchronized data transfers and improved performance, making it suitable for high-speed computing tasks.

Technical Specifications

DRAM MT48LC8M16A2P-75IT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

310 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC8M16A2P-75IT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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