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MTA4ATF1G64HZ-3G2E1

Micron Technology

MTA4ATF1G64HZ-3G2E1 by Micron Technology

Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Vyrian

USA . 6,130 parts In-Stock

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6,130

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Digiode

USA . 1,429 parts In-Stock

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1,429

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$4.786

100+ parts

$4.355

1k+ parts

$3.925

10k+ parts

-

200

$4.786

$4.355

$3.925

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AZTECH Wire

Italy . 1,049 parts In-Stock

1+ parts

$17.970

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1,049

$17.970

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Ampacity Inc.

Singapore . 631 parts In-Stock

1+ parts

$18.000

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631

$18.000

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Component Stockers USA

USA . 375 parts In-Stock

1+ parts

$99.990

100+ parts

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375

$99.990

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Infinite Electronics LLP (Excess)

. 10,008 parts In-Stock

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10,008

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Argo Parts USA

USA . 3,176 parts In-Stock

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3,176

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Continental Prestige Electronics

USA . 1,553 parts In-Stock

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1,553

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Corphita

USA . 1,389 parts In-Stock

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1,389

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Transform your computing experience with the MTA4ATF1G64HZ-3G2E1 by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-quality DRAM modules that guarantee reliable performance and seamless operation. Whether you're a gamer, professional designer, or business owner, this product offers unparalleled speed, efficiency, and multitasking capabilities. Upgrade your system today with Micron's cutting-edge technology and unlock new possibilities for productivity and entertainment.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape is a common and efficient design for DRAM modules, allowing for easy installation and compatibility with a wide range of systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable rate, improving overall system performance and reliability.

Self Refresh: YES

Self-refresh capability helps in reducing power consumption and prolonging the lifespan of the DRAM module, making it an energy-efficient choice.

Input/Output Type: COMMON

A common input/output type simplifies integration with other components and devices, enhancing the overall compatibility and usability of the DRAM module.

No. of Terminals: 260

Having a higher number of terminals allows for more connections and data pathways, enabling faster and more efficient data transfer within the system.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature, this DRAM module can withstand demanding conditions and maintain stable performance even in hot environments.

Organization: 1GX64

The organization of 1GX64 indicates a high density and capacity for storing data, making this DRAM module suitable for applications that require large amounts of memory.

Technology: CMOS

CMOS technology is known for its low power consumption and high speed, making this DRAM module energy-efficient and capable of delivering fast data processing.

Technical Specifications

DRAM MTA4ATF1G64HZ-3G2E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XDMA-N260

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Self Refresh:

YES

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MTA4ATF1G64HZ-3G2E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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