Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's EDB4432BBBJ-1DAIT-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
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QUARKTWIN TECHNOLOGY LTD
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PLASTIC/EPOXY - This material is durable and provides good protection for the components inside, making it a reliable choice.
YES - Being surface mountable makes it easy to integrate this DRAM into various electronic devices for efficient use of space.
RECTANGULAR - The rectangular shape allows for easy stacking and integration into circuit boards, optimizing space usage.
SYNCHRONOUS - Synchronous operation ensures precise timing and coordination with other components, enhancing overall system performance.
YES - The self-refresh feature helps in saving power and improving battery life in devices where this DRAM is used.
1.2 - The low nominal supply voltage helps in reducing power consumption and heat generation, ideal for energy-efficient devices.
134 - With a high number of terminals, this DRAM offers flexibility in connecting to other components for seamless operation.
GRID ARRAY, VERY THIN PROFILE, FINE PITCH - This package style allows for high-density mounting, making it suitable for compact electronic devices.
85 °C - The high maximum operating temperature tolerance ensures reliability even in harsh environmental conditions.
128MX32 - This organization provides a high memory capacity and data width, suitable for demanding applications that require fast data processing.
40 °C - The low minimum operating temperature range allows for usage in cold environments without compromising performance.
BOTTOM - The bottom terminal position simplifies the PCB layout and makes it easier to connect to other components in the system.
0.75 mm - The low seated height profile makes it suitable for slim devices while maintaining high memory capacity.
10 mm - The compact width of this DRAM allows for easy integration into tight spaces in electronic devices.
1.14 V - The low minimum supply voltage requirement helps in reducing power consumption and heat dissipation, enhancing energy efficiency.
11.5 mm - The moderate length of this DRAM makes it versatile for use in various electronic devices without compromising performance.
INDUSTRIAL - The industrial-grade temperature tolerance ensures reliable operation even in extreme temperature variations.
SINGLE BANK PAGE BURST - The single bank access mode with page burst feature enhances data access speed, ideal for high-performance applications.
CMOS - The CMOS technology used in this DRAM offers low power consumption and high speed, making it suitable for energy-efficient devices.
BALL - The ball terminal form factor simplifies the soldering process and provides a secure connection for stable performance.
134217728 words - With a high number of words, this DRAM offers extensive memory storage capacity for storing large datasets and running multiple applications simultaneously.
32 - The wide memory width enhances data transfer speed and efficiency, essential for applications that require fast processing.
0.65 mm - The small terminal pitch allows for high-density mounting on PCBs, making it suitable for compact electronic devices.
128M - The coding of 128M for the number of words simplifies identifying and integrating this DRAM into systems without confusion.
1.3 V - The maximum supply voltage tolerance provides a safe operating range while ensuring stable performance under fluctuating voltage conditions.
4294967296 bit - The high memory density offers ample storage capacity for data-intensive applications, enabling smooth operation without storage limitations.
LPDDR2 DRAM - The LPDDR2 DRAM type delivers high performance with low power consumption, making it suitable for mobile and embedded applications.
DRAM EDB4432BBBJ-1DAIT-F-D attributes and parameters. Explore more DRAM devices from Micron Technology
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EDB4432BBBJ-1DAIT-F-D Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Obsolescence/ EOL - Mult Dev OBS 09/Nov/2020
PCN Packaging - Mult Devices 22/Feb/2018 Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
SS14
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMBJ18CA
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
1N4148WS
Weitron Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
Changzhou Starsea Electronics
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
Diodes Incorporated
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
LL4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358AN
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Semtech
Onsemi
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AT90CAN128-16AUR
Microchip Technology
AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.
Thinking Electronic Industrial
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
MT40A512M16JY-075E:BTR
Micron Technology
Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT44K16M36RB-093:A
Micron Technology's MT44K16M36RB-093:A is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
NT5CC256M16ER-EKA
Nanya Technology
NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K128M8DA-107:J
Micron Technology's MT41K128M8DA-107:J is a DDR3L DRAM with 128MX8 organization, operating at 933 MHz clock frequency. It features 1.35V supply voltage, 78 terminals in a thin profile grid array package. Ideal for high-speed applications requiring synchronous operation and common I/O type.
MT47H64M16HR-3IT:H
Micron Technology's MT47H64M16HR-3IT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M366S3253ETS-C7A
Samsung
Samsung M366S3253ETS-C7A is a 32MX64 Synchronous DRAM with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers self-refresh capability and a memory density of 2GB, featuring a max access time of 5.4ns for high-speed data processing.
MT46V32M16P-5B:FTR
MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.
MT47H128M8SH-25EAIT:M
Micron Technology's MT47H128M8SH-25EAIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as automotive electronics or industrial control systems.
W631GG6NB-09
Winbond Electronics
Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.
IS42S16800F-6BLI
Integrated Silicon Solution
IS42S16800F-6BLI by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring high memory density and fast access times.
M393B1K70DH0-CK0
Samsung's M393B1K70DH0-CK0 is a 1GX72 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.5V, it offers 1073741824 words memory capacity and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT48LC2M32B2P-6AIT:J
Micron Technology's MT48LC2M32B2P-6AIT:J is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications. With a low standby current of 0.0025 Amp and common I/O type, it offers fast access time of 5.4 ns.
MT46V16M16P-5B:M
Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
AS4C512M16D3LA-10BIN
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BIN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from -40 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density in a compact grid array package.
IS42S16320D-7BLI
IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
MT41J128M16JT-093:K
Micron Technology's MT41J128M16JT-093:K is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
IS42S32800J-7TL
IS42S32800J-7TL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4ns and a memory density of 268MB.
MT53E1G32D2FW-046AAT:B
Micron Technology's MT53E1G32D2FW-046AAT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast clock frequency in automotive electronics or industrial devices.
K4T1G164QF-BIE6
Samsung's K4T1G164QF-BIE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast data processing and storage with a low standby current of 0.01 Amp.
MT61K512M32KPA-16:B
Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.
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EDB4432BBBJ-1DAIT-F-R
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 128MX32;
EDB4432BBBJ-1D-F-D
LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B134; Terminal Position: BOTTOM;
EDB4432BBBJ-1DAAT-F-R
LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
EDB4432BBBJ-1D-F-R
LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .65 mm; Minimum Supply Voltage (Vsup): 1.14 V;
EDB4432BBBJ-1DAAT-F-D
LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; Width: 10 mm;
EDB4432BBBJ-1DAUT-F-D
Micron Technology's EDB4432BBBJ-1DAUT-F-D is a PLASTIC/EPOXY DRAM with SYNCHRONOUS operating mode and SELF REFRESH capability. It has a memory density of 4294967296 bit and is commonly used in AUTOMOTIVE applications.
EDB4432BBBJ-1DAIT-F
Micron Technology's EDB4432BBBJ-1DAIT-F is a PLASTIC/EPOXY DRAM with 128MX32 organization and 32-bit memory width. It operates synchronously, has self-refresh capability, and is suitable for industrial applications.
EDB4432BBBJ-1DAUT-F-R
LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;
EDB4432BBBJ-1D-F
LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 128MX32; Package Body Material: PLASTIC/EPOXY;
EDB4416BBBH-1DIT-F
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;
EDB4064B3PD-8D-F
DDR2 DRAM; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 64M; Length: 14 mm;
EDB4416BBBH-1DIT-F-D
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
EDB4416BBBH-1DIT-F-R
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
EDB4064B3PB-8D-F
DDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Width: 12 mm; Memory Density: 4294967296 bit;
EDB4064B4PB-1D-F
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: MULTI BANK PAGE BURST;
EDB4416BBBH-1DIT-F-RTR
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;
EDB4432BABH-1D-F
DDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .8 mm; Organization: 128MX32;
EDB4064B4PB-1D-F-R
LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm;
EDB4432BAPA-1D-F
DDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY;
Supply Digital Components
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