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IS42S83200G-7BLI-TR

Integrated Silicon Solution

IS42S83200G-7BLI-TR by Integrated Silicon Solution

IS42S83200G-7BLI-TR by Integrated Silicon Solution is a 32MX8 Synchronous DRAM with 3.3V supply, 85°C max temp, and 143 MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.

Median Price

$8.380

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,613 parts In-Stock

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NAC Semi

USA . 2,500 parts In-Stock

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$8.380

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Nova Conductors

Japan . 15 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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$3.013

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Aztec Data Supply Inc.

USA . 232 parts In-Stock

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$3.120

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AZTECH Wire

Italy . 517 parts In-Stock

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$15.100

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Continental Prestige Electronics

USA . 6,851 parts In-Stock

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Eastek

USA . 2,500 parts In-Stock

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$7.360

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Argo Parts USA

USA . 2,026 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Overview

Elevate your electronic devices with the IS42S83200G-7BLI-TR by Integrated Silicon Solution, a top-tier manufacturer known for quality and reliability. This cutting-edge DRAM offers unparalleled performance and versatility, making it ideal for a wide range of applications. With a focus on value and customer satisfaction, this product delivers exceptional benefits and advantages that will take your projects to the next level. Upgrade to the IS42S83200G-7BLI-TR and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good protection for the internal components and ensures durability of the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation of the product on circuit boards.

Input/Output Type: COMMON

Common input/output type ensures compatibility with a wide range of systems and devices.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard 3.3V supply voltage ensures reliable and stable performance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for usage in industrial applications that may require higher temperatures.

Organization: 32MX8

The 32MX8 organization provides a good balance of capacity and speed for memory operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous DRAM technology enables faster data transfer rates and improved overall performance.

Technical Specifications

DRAM IS42S83200G-7BLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

130 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Trade Compliance

IS42S83200G-7BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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